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Light-emitting device, aluminum nitride product, aluminum nitride single crystal and manufacturing method and application thereof

A production method, aluminum nitride technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., to achieve the effect of avoiding mechanical damage and pyrolysis, and high-quality recrystallization

Active Publication Date: 2022-02-18
SONGSHAN LAKE MATERIALS LAB
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The quality of the existing aluminum nitride film needs to be further improved

Method used

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  • Light-emitting device, aluminum nitride product, aluminum nitride single crystal and manufacturing method and application thereof
  • Light-emitting device, aluminum nitride product, aluminum nitride single crystal and manufacturing method and application thereof
  • Light-emitting device, aluminum nitride product, aluminum nitride single crystal and manufacturing method and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0091] In the present embodiment, aluminum namide aluminum, 300 nano thickness is prepared on the sapphire substrate, and the thin layer of 5 nano-aluminum oxy nitrogen Alon is prepared by reaction magnetron sputtering on aluminum. A composite structure is obtained. The composite structure is then placed in an annealing furnace to perform a high temperature annealing treatment to obtain a surface-free aluminum nitride single crystal.

[0092] The surface lossless aluminum single crystal template of the present embodiment includes the following steps:

[0093] 1) Select the sapphire substrate of the 2 inch (0001) crystal plane of single-sided polishing, using acetone for 10 minutes, then blow dry with nitrogen, such as figure 1 As shown, 1 is a sapphire substrate 1 after cleaning.

[0094] 2) After washing the lamethase, a 300 nm thick aluminum nitride film layer 2 is deposited by the method of reaction magnetron sputtering. figure 2 It is shown.

[0095] The deposition temperature...

Embodiment 2

[0102] In the present embodiment, aluminum nitride of 500 nano thickness is prepared on the sapphire substrate by reaction magnetron, and 5 nanometers Alon is prepared by reactive magnetron sputtering on the aluminum. A composite structure is obtained. The composite structure is then placed in an annealing furnace to perform a high temperature annealing treatment to obtain a surface-free aluminum nitride single crystal.

[0103] The surface lossless aluminum single crystal template of the present embodiment includes the following steps:

[0104] 1) Select the sapphire substrate of the 2-inch (0001) crystal surface of a single-sided polishing, using acetone for ultrasonic cleaning for 10 minutes, and then blows dry with nitrogen.

[0105] 2) After washing the lametage of the sapphire substrate, a 300 nm thick aluminum nitride film layer is deposited by a method of reaction magnetron sputtering.

[0106] The deposition temperature is 500 ° C, the deposition power is 3000W, the gas a...

Embodiment 3

[0113] In the present embodiment, aluminum namide aluminum is prepared on a sapphire substrate using a reaction magnetron sputtering, and 5 nanometers Alon is prepared by reactive magnetron sputtering on aluminum. A composite structure is obtained. The composite structure is then placed in an annealing furnace to perform a high temperature annealing treatment to obtain a surface-free aluminum nitride single crystal.

[0114] The surface lossless aluminum single crystal template of the present embodiment includes the following steps:

[0115] 1) Select the sapphire substrate of the 2-inch (0001) crystal surface of a single-sided polishing, using acetone for ultrasonic cleaning for 10 minutes, and then blows dry with nitrogen.

[0116] 2) After washing the lametage of the sapphire substrate, a 300 nm thick aluminum nitride film layer is deposited by a method of reaction magnetron sputtering.

[0117] The deposition temperature is 500 ° C, the deposition power is 3000W, the gas atmos...

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Abstract

The invention discloses a light-emitting device, an aluminum nitride product, an aluminum nitride single crystal and a manufacturing method and application thereof, and belongs to the field of semiconductor materials. The manufacturing method of the aluminum nitride single crystal comprises the following steps: providing an aluminum nitride layer grown on the surface of a substrate with a selected crystal orientation; manufacturing an aluminum oxynitride film on the surface of the aluminum nitride; annealing in a selected atmosphere to recrystallize the aluminum nitride and the aluminum oxynitride, inhibiting decomposition of the aluminum nitride layer by recrystallization of the aluminum oxynitride and ensuring the crystal structure of the aluminum nitride. The manufacturing method is simple and easy to implement and high in repeatability, mechanical abrasion generated on the surface can be avoided, the yield of the chip in the prepared epitaxial wafer is greatly improved, and the great promotion effect on cost reduction and yield improvement is achieved.

Description

Technical field [0001] The present application relates to the field of semiconductor materials, and in particular, there is a light emitting device, aluminum nitride product, aluminum nitride single crystal and its production method, application. Background technique [0002] High-performance AlgaN-based deep UV LEDs in efficient sterilization are triggering people's continued attention. Despite this, due to a series of materials or physical reasons, the overall performance of deep UV LEDs is still far from blue LED. One of the most important causes is how to prepare a large size, low cost, and a wafer substrate close to the deep ultraviolet LED crystal structure. [0003] The quality of the existing aluminum nitride film needs to be further improved. Inventive content [0004] The present application proposes light-emitting devices, aluminum nitride products, aluminum nitride single crystals, and methods of fabrication, and applications to obtain single crystal aluminum nitride...

Claims

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Application Information

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IPC IPC(8): C30B29/40C30B25/06C30B25/18C23C14/06C23C14/35C23C14/58H01L33/02H01L33/32
CPCC30B29/403C30B25/06C30B25/18C23C14/0617C23C14/0676C23C14/0036C23C14/35C23C14/5806C30B33/02H01L33/02H01L33/32
Inventor 王新强袁冶刘上锋罗巍康俊杰万文婷
Owner SONGSHAN LAKE MATERIALS LAB
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