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Metal etching liquid for integrated circuit and preparation method of metal etching liquid

A metal etching and integrated circuit technology, which is applied in the field of etching solution, can solve the problems of critical dimension loss and slow etching efficiency, and achieve the effects of reducing critical dimension loss, high etching efficiency, and easy corrosion of metals

Pending Publication Date: 2022-03-25
江苏中德电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a kind of metal etchant for integrated circuit and preparation method thereof, to solve the critical dimension loss that existing metal etchant causes to the etching of multilayer metal of copper / molybdenum, the problem that etching efficiency is slower

Method used

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  • Metal etching liquid for integrated circuit and preparation method of metal etching liquid
  • Metal etching liquid for integrated circuit and preparation method of metal etching liquid
  • Metal etching liquid for integrated circuit and preparation method of metal etching liquid

Examples

Experimental program
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Effect test

Embodiment 1

[0029] The active agent is made by the following steps:

[0030] A1. Stir 0.1mol of hexamethylenediamine, 0.41mol of methyl acrylate and 60mL of methanol evenly, then stir the reaction at 32°C for 6h, then remove the methanol by rotary evaporation, dissolve the resultant in 50mL of dichloromethane, stir well, and add to it Add 0.1M hydrochloric acid solution dropwise until the pH is less than 1, then add 50mL deionized water to wash, extract 3 times with 40mL dichloromethane, take the organic layer and remove the dichloromethane by rotary evaporation to obtain intermediate 1; 1 Dissolve in 60mL tetrahydrofuran, add 0.4mol aluminum tetrahydrogen lithium in three equal batches to it under stirring in an ice-water bath at 0°C, the interval between batches is 15min, after reacting for 4h, add 100mL ice water to quench Add 0.1M sodium hydroxide solution and 50mL deionized water, filter with diatomaceous earth, extract the filtrate with 60mL ethyl acetate, wash with 50mL deionized w...

Embodiment 2

[0035] The active agent is made by the following steps:

[0036] A1. Stir 0.1mol of hexamethylenediamine, 0.43mol of methyl acrylate and 100mL of methanol evenly, then stir the reaction at 32°C for 6h, then remove the methanol by rotary evaporation, dissolve the resultant in 80mL of dichloromethane, stir well, and add to it Add 0.1M hydrochloric acid solution dropwise until the pH is less than 1, then add 70mL deionized water to wash, extract 3 times with 70mL dichloromethane, take the organic layer and then rotary evaporate to remove dichloromethane to obtain intermediate 1; 0.1mol intermediate 1 Dissolve in 90mL tetrahydrofuran, add 0.5mol aluminum tetrahydrogen lithium in three equal batches under stirring in an ice-water bath at 0°C, the interval between batches is 15min, after reacting for 4h, add 100mL ice water to quench Add 0.1M sodium hydroxide solution and 50mL deionized water, filter with diatomaceous earth, extract the filtrate with 60mL ethyl acetate, wash with 50...

Embodiment 3

[0041] Preparation of a metal etching solution for integrated circuits

[0042] Step 1, take the following raw materials by weight: 1.2g citric acid, 0.5g tartaric acid, 1g salicylic acid, 2.5g boric acid, 0.1g dihydrogen phosphate, 0.3g sulfate, 4g oxidizing agent, 2g active agent prepared in Example 1 , 88.4g deionized water, the oxidant is ammonium persulfate, sodium persulfate, sodium hydrogen persulfate, potassium persulfate according to the mass ratio of 3:1:2:1 mixed composition;

[0043] Step 2. Mix tartaric acid, salicylic acid, boric acid and two-thirds of deionized water evenly, then add dihydrogen phosphate and sulfate under stirring, stir for 20 minutes, then add active agent, stir After 20 minutes, the first mixed solution was obtained;

[0044] Step 3: Mix the citric acid, the oxidizing agent and the remaining deionized water evenly, then add the first mixed solution, and stir at 300 r / min for 40 minutes to obtain a metal etching solution for integrated circuit...

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Abstract

The invention relates to a metal etching solution for an integrated circuit and a preparation method of the metal etching solution, and belongs to the technical field of etching solutions. The metal etching liquid comprises, by weight, 1.2%-2.6% of citric acid, 0.5%-1.8% of tartaric acid, 1%-3% of salicylic acid, 2.5%-6.5% of boric acid, 0.1%-0.5% of dihydric phosphate, 0.3%-0.5% of sulfate, 4%-8% of oxidizing agents, 2%-8% of active agents and the balance deionized water. The metal etching liquid has an efficient etching effect on etching of multi-layer metal of copper / molybdenum, copper and molybdenum are efficiently corroded through scientific compatibility of tartaric acid, salicylic acid, boric acid and an oxidizing agent, and copper side corrosion and molybdenum side corrosion of the metal etching liquid in the corrosion process are inhibited through scientific compatibility of dihydric phosphate, sulfate and an active agent; and the critical dimension loss is reduced, so that the obtained etching pattern has good straightness.

Description

technical field [0001] The invention belongs to the technical field of etching solution, and in particular relates to a metal etching solution for integrated circuits and a preparation method thereof. Background technique [0002] In semiconductor manufacturing process or flat panel display manufacturing process, metals such as chromium (Cr), molybdenum (Mo), copper (Cu), aluminum (Al), titanium (Ti) or their alloys are often used as conductive materials. In the past, in order to effectively etch metal conductive materials, etchant compositions containing acids and oxidants were often used for chromium (Cr), aluminum (Al), titanium (Ti), molybdenum (Mo), Molybdenum / aluminum (Mo / Al) multilayer metal or titanium / aluminum (Ti / Al) multilayer metal is etched. However, due to the different types of metals to be etched according to the requirements, and the degree of etching required is also different. Therefore, at present, the industry mostly selects the appropriate acid and oxi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18C23F1/26H01L21/3213
CPCC23F1/18C23F1/26H01L21/32134
Inventor 戈士勇何珂戈烨铭
Owner 江苏中德电子材料科技有限公司
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