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Visual temperature ladder crystal condensation growth device with low oblique and growth method thereof

A growth device and small-angle technology, which is applied in the field of crystal material growth devices, can solve problems such as lower crystal quality, lower crystal transmittance, and invisible growth process

Active Publication Date: 2005-03-16
日照大象房屋建设有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are two problems that have restricted the application of this kind of crystal materials: due to severe anisotropic thermal expansion, it is difficult to grow large-sized crystals; intrinsic defects cause light absorption and light scattering, and the transmittance of crystals in the near and mid-infrared regions decreases.
However, these methods also have certain defects, which affect the crystal quality
For example, the United States uses a transparent horizontal gradient method to grow the crystal. They use three layers of quartz glass for heat preservation, and the outermost layer of quartz glass is plated with gold. The connection between the boat seed crystal end and the melt end is at a right angle, which increases the stress during crystal growth and increases the growth stripes, thereby reducing the crystal quality
Russia and others use the crucible drop method to grow this type of crystal, the growth process is invisible, and the growth cannot be well controlled. In addition, this method cannot avoid the cracking caused by the different thermal stress of the material in different directions

Method used

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  • Visual temperature ladder crystal condensation growth device with low oblique and growth method thereof
  • Visual temperature ladder crystal condensation growth device with low oblique and growth method thereof
  • Visual temperature ladder crystal condensation growth device with low oblique and growth method thereof

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specific Embodiment approach 1

[0006] Specific embodiment 1: The device of the present invention includes a three-layer quartz tube 1, a thermocouple 2 installed between the second layer of quartz tube 1-2 and the third layer of quartz tube 1-3, and installed on the third layer of quartz tube 1. The growth boat 3 in -3, the low-temperature thermal resistance 5-1 and the high-temperature thermal resistance 5-2 installed in the second layer of quartz tube 1-2, the growth device is inclined to the ground, and the inclination angle α is 0.1-25 Degree, can be 1 degree, 3 degree, 8 degree, 10 degree, 12 degree, 18 degree, 22 degree. In the tilted device, the level of high temperature thermal resistance 5-2 is higher than that of low temperature thermal resistance 5-1 High, the outer surface of the second layer of quartz tube 1-2 is plated with gold or silver, which can keep heat and be transparent under light.

[0007] The growth method of this embodiment is as follows: the growth boat 3 containing raw materials and ...

specific Embodiment approach 2

[0008] Specific implementation manner 2: In this embodiment, the junction between the seed crystal end 3-1 and the melt end 3-2 of the growth vessel 3 is an acute angle, and the acute angle β is 1-60 degrees, which can be 5 degrees, 10 degrees, 20 degrees, 30 degrees, 40 degrees, 50 degrees.

[0009] The growth device and growth method of the present invention can be used for the growth of chalcopyrite semiconductor crystal materials. The polycrystalline raw materials are placed in a growth boat, and the growth boat materials are graphite, vitrified graphite and quartz glass coated with boron nitride coating.

[0010] Chalcopyrite semiconductor materials include IB-IIIA-VIA 2 And IIB-IVA-VA 2 Group compounds. Group IB elements include Cu, Ag, group IIIA elements include Al, Ga, In, group VIA elements include S, Se, Te; group IIB elements include Zn, Cd, Hg, group IVA elements include Si, Ge, Sn, group VA Elements include P and As.

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Abstract

A visualized small angle inclination temperature gradient condensing unit for crystal growth and its growth method is provided, relating to a crystal material growing device and growing method. Existing growing device has shortcomings that gold plating is not convenient, plating layer is not uniform, and crystal growth has great stress. The inventive growth device is mounted inclining to ground, and in the inclined device, the horizontal elevation of high temperature hot resistance is higher than low temperature hot resistance. The inventive growing method is : placing growing vessel (3) in quartz capsule(4), sealing then placing it in growing device, ascending the oven temperature, keeping the high temperature 1-2 hours, then reducing oven temperature, temperature descending speed being 0.05-0.1K / hr, when whole crystal forming, promoting temperature descending speed to 2-5K / hr until the room temperature. Crystal can orientablly grow in the inventive device, and downward growth of crystal accords with the growth rule than horizontal growth, in downward growth the crystal quality is still better. The inventive method can avoid crystal crack, adapt to the generalized application.

Description

Technical field: [0001] The invention relates to a crystal material growth device and a growth method thereof. Background technique: [0002] At the end of the 1960s, people have learned that chalcopyrite-based semiconductor crystal materials have two outstanding advantages: nonlinear optical coefficient and high transmittance in the far-infrared region. They are used as optical parametric oscillation and optical parameter. Non-linear dielectric materials such as amplification, second harmonic, fourth harmonic, etc., can be used in the frequency conversion of the middle and far red bands, especially in the fields with higher laser power requirements, and obtain broad application prospects, such as infrared spectroscopy , Infrared medical equipment, drug detection, infrared lithography, monitoring of harmful substances in the atmosphere, long-distance chemical sensing, infrared laser directional interference, night vision, etc. However, there are two problems that have restricted ...

Claims

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Application Information

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IPC IPC(8): C30B11/00
Inventor 杨春晖王锐
Owner 日照大象房屋建设有限公司
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