Polishing fluid and polishing method

Abstract

The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residue and scratches after polishing, and a method of chemical mechanical polishing using this. The polishing slurry of the present invention is polishing slurry containing at least one of a surfactant and an organic solvent, and a metal oxide dissolving agent and water, or polishing slurry containing water and abrasive of which surface has been modified with an alkyl group, and preferably, it further contains a metal oxidizer, water-soluble polymer, and metal inhibitor.

Description

FIELD OF THE INVENTION The present invention relates to polishing slurry and a polishing method used for polishing in a process of forming wiring of a semiconductor device, and the like. BACKGROUND TECHNOLOGY Recently, novel fine processing technologies are being developed with increase in the degree of integration and the performance of semiconductor integration circuits (hereinafter, referred to as LSI). Also a chemical mechanical polishing (hereinafter, referred to as CMP) method is one of these technologies, and is a technology frequently used in flattening of an interlayer insulating film, formation of a metal plug and formation of implanted wiring in an LSI production process, particularly, a multi-layer wiring formation process. This technology is disclosed, for example, in U.S. Pat. No. 4,944,836. Recently, for increasing the performance of LSI, utilization of copper and copper alloy has been tried as a conductive substance of a wiring material. However, it is difficult t...

AI Technical Summary

Benefits of technology

(23) The polishing method according to any of the above-mentioned (20) to (22), wherein the barrier conductor layer is a barrier layer of preventing diffusion of the above-mentioned conductive substance into the above-mentioned interlayer insulating film,

Problems solved by technology

However, it is difficult to finely process copper and copper alloy by a conventional dry etching method frequently used in formation of aluminum alloy wiring.

Consequently, a phenomenon of formation of depression in the form of dish at the central portion of the surface of implanted metal wiring after polishing (hereinafter, referred to as dishing) occurs, deteriorating the flattening effect.

However, the conductor of this barrier layer has high hardness as compared with copper or copper alloy, consequently, sufficient polishing speed is not obtained and its flattening property deteriorates in may cases even if a polishing material for copper or copper alloy