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Pattern forming method and bilayer film

a technology of bilayer film and pattern forming method, which is applied in the direction of photosensitive materials, instruments, photomechanical equipment, etc., can solve the problems of cracks and peels in resist film, resolution cannot be increased, and the accuracy of the excimer laser using these resins cannot be high,

Inactive Publication Date: 2007-10-25
IWASAWA HARUO +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

Enables the formation of minute patterns with high aspect ratio and improved dry etching resistance, reducing pattern erosion and collapsing, while maintaining transparency to short wavelengths.

Problems solved by technology

However, since these resins exhibit strong absorbance at a wavelength of 193 nm due to inclusion of aromatic rings in the structure, a lithographic process by an ArF excimer laser using these resins cannot provide high accuracy corresponding to high photosensitivity, high resolution, and a high aspect ratio.
Since this polysiloxane is a homopolymer, resolution cannot be increased if the acid-dissociable carboxylic acid ester group on the side chain does not efficiently dissociate.
If a large number of acid-dissociable groups dissociate, on the other hand, the curing shrinkage stress of the resist film increases, causing cracks and peels in the resist film.
Since this resist protects the carboxyl groups only insufficiently, it is difficult to develop the resist containing a large amount of carboxylic acid components remaining in the non-exposed area using a common alkaline developing solution.
The resin has a problem of insufficient transparency to light with a wavelength of 193 nm or less due to unsaturated groups remaining on the polymer side chains.
This polymer also has the same problem as a resist as encountered by the polymer disclosed in Japanese Patent Application Laid-open No. 160623 / 1996 due to a low degree of carboxyl group protection.
However, the effect of standing waves that are considered to be caused by high transparency of this type of resists to light with a short wavelength cannot be ignored.
However, i-line resists do not necessarily possess satisfactory dry etching resistance.
Reduction of film thickness has been unavoidable.
However, since the pattern size is very small in the process with a minute silicon-type oxide film using a KrF excimer laser, an ArF excimer laser, or an F2 excimer laser (wavelength: 157 nm), this method of increasing the thickness of the under layer film inevitably increases the aspect ratio of patterns.
As a result, the pattern is easily eroded from the sidewall by etching gas, dwindling away or collapsing.
Precise pattern transfer is difficult.

Method used

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  • Pattern forming method and bilayer film
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  • Pattern forming method and bilayer film

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1-1

Preparation of Under Layer Film Polymer

[0237] A separable flask equipped with a thermometer was charged with 100 parts of acenaphthylene, 78 parts of toluene, 52 parts of dioxane, and 3 parts of azobisisobutyronitrile under nitrogen atmosphere. The mixture was stirred for 5 hours at 70° C. Next, 5.2 parts of p-toluenesulfonic acid monohydrate and 40 parts of paraformaldehyde were added. After heating to 120° C., the mixture was stirred for 6 hours. The reaction solution was charged into a large amount of isopropanol. The resulting precipitate was collected by filtration and dried at 40° C. under reduced pressure to obtain a polymer.

[0238] Mw of the polymer was found to be 22,000 and 1H-NMR analysis confirmed that the polymer has the structural unit of the following formula (26).

synthesis example 1-2

Preparation of Under Layer Film Polymer

[0239] A separable flask equipped with a thermometer was charged with 6 parts of acenaphthylene, 5 parts of 4-hydroxymethylstyrene, 48 parts of n-butylacetate, and 4 parts of azobisisobutyronitrile under nitrogen atmosphere. The mixture was stirred for 7 hours at 75° C.

[0240] The reaction solution was diluted with 100 parts of n-butyl acetate and charged into a large amount of a water / methanol mixture (weight ratio=½). The resulting precipitate was collected by filtration and the solvent was evaporated to obtain a polymer with an Mw of 1,200.

synthesis example 2

Synthesis of Silane Compound

[0241] A three-necked flask equipped with a stirrer, a reflux condenser, and a thermometer was charged with 76.0 g of triethoxysilane and 100 g of 8-t-butoxycarbonyltetracyclo[4.4.0.12,5.17,10]dodeca-3-ene. The mixture was stirred at room temperature and 5.0 ml of a 0.2 mol chloroplatinic acid (H2PtCl6) solution in i-propyl alcohol was added to initiate the reaction. The reaction was continued for 75 hours at 150° C. while refluxing. The reaction mixture was allowed to cool to room temperature, diluted with n-hexane, and filtered through celite by suction. The solvent was removed from the filtrate by evaporation under vacuum to obtain a crude product. The residue was purified by silica gel column chromatography to obtain 53 g of a reaction product as a n-hexane fraction. As shown by the following results of 1H-NMR spectrum (chemical shift σ) and IR spectrum measurement, this reaction product was identified to be the compound shown by the following formul...

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Abstract

A pattern forming method comprising forming a coating of a radiation-sensitive resin composition, which contains an acid-dissociable group-containing polysiloxane, alkali-insoluble or scarcely alkali-soluble but becoming alkali-soluble when the acid-dissociable group dissociates, on a film containing a polymer with a carbon content of 80 wt % or more and a polystyrene-reduced weight average molecular weight of 500-100,000, an applying radiation to the coating is provided. The method can form minute patterns with a high aspect ratio by suitably selecting a specific etching gas in the dry etching process, without being affected by standing waves.

Description

BACKGROUND OF THE INVENTION [0001] 1. Field of the Invention [0002] The present invention relates to a pattern forming method suitable for alithography process and a bilayer film for forming patterns. The pattern forming method comprises a process of forming a coating, which comprises a radiation-sensitive resin composition containing an acid-dissociable group-containing polysiloxane, onto a film with a high carbon content and irradiating the coating with light such as deep ultraviolet rays, electron beams, and X-rays. [0003] 2. Description of the Background Art [0004] A recent strong demand for high density and highly integrated LSIs accelerates miniaturization of wiring patterns. [0005] Using short wave rays in a lithographic process is one method for miniaturizing wiring patterns. In recent years, deep ultraviolet rays typified by a KrF excimer laser (wavelength: 248 nm) or an ArF excimer laser (wavelength: 193 nm), electron beams, X rays, and the like are being used in place of ...

Claims

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Application Information

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Patent Type & Authority Applications(United States)
IPC IPC(8): G03C1/72G03F7/004G03F7/075G03F7/09
CPCG03F7/0045Y10S430/106G03F7/091G03F7/0757G03F7/075
Inventor IWASAWA, HARUOHAYASHI, AKIHIROSHIMOKAWA, TSUTOMUKAWAGUCHI, KAZUOTANAKA, MASATO
Owner IWASAWA HARUO