Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resist underlayer film-forming composition containing indolocarbazole novolak resin

a technology of indolocarbazole and film-forming composition, which is applied in the direction of photomechanical equipment, photosensitive material processing, instruments, etc., can solve the problems of severe standing wave effects, resist pattern collapse, and resist pattern collapse, so as to achieve sufficient etching resistance, efficient suppression of reflection from the substrate, and favorable pattern shape of resis

Inactive Publication Date: 2018-12-13
NISSAN CHEM IND LTD
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The present invention relates to a resist underlayer film-forming composition which can efficiently suppress reflection from a substrate and form a favorable pattern shape of resist without intermixing with the upper layer part. This composition has high heat resistance and thermal stability, and can prevent contamination of a film of upper layer in a baking step. Additionally, it can provide an excellent resist underlayer film having a selection ratio of dry etching rate close to that of resist, a selection ratio of dry etching rate lower than that of resist, and a selection ratio of dry etching rate lower than that of semiconductor substrate. Furthermore, it can prevent collapse of a developed resist pattern due to miniaturization of the pattern.

Problems solved by technology

Therefore, diffuse reflection of active light on the substrate and effects of standing wave are severe problems.
When formation of finer resist pattern further proceeds, a problem of resolution and a problem in which the resist pattern collapses after development occur.
In this case, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resist underlayer film-forming composition containing indolocarbazole novolak resin
  • Resist underlayer film-forming composition containing indolocarbazole novolak resin
  • Resist underlayer film-forming composition containing indolocarbazole novolak resin

Examples

Experimental program
Comparison scheme
Effect test

synthesis example 1

[0090]In a three-neck flask, 5.00 g of the compound 1, 2.84 g of 1-pyrenecarboxyaldehyde (available from Aldrich), 19.12 g of propylene glycol monomethyl ether acetate, and 0.35 g of methanesulfonic acid (available from Tokyo Chemical Industry Co., Ltd.) were placed. The mixture was then heated to 150° C., and stirred under reflux for about 36 hours. After completion of the reaction, the mixture was diluted with 24.80 g of propylene glycol monomethyl ether acetate, and the precipitate was removed by filtration. The collected filtrate was added dropwise to a methanol solution, resulting in reprecipitation. The obtained precipitate was filtered by suction, and the filtered product was dried at 60° C. overnight under reduced pressure. As a result, 2.51 g of resin was obtained as a black powder. The resulting polymer corresponded to formula (1-1). The weight average molecular weight Mw measured by GPC in terms of polystyrene was 5,900 and the polydispersity index Mw / Mn was 2.19.

synthesis example 2

[0091]In a two-neck flask, 8.00 g of the compound 1, 2.08 g of benzaldehyde (available from KISHIDA CHEMICAL Co., Ltd.), 28.39 g of propylene glycol monomethyl ether acetate, 7.10 g of N-methyl-2-pyrrolidinone (available from KANTO CHEMICAL CO., INC.), and 1.13 g of methanesulfonic acid (available from Tokyo Chemical Industry Co., Ltd.) were placed. The mixture was then heated to 150° C., and stirred under reflux for about 20 hours. After completion of the reaction, the mixture was diluted with 20.49 g of propylene glycol monomethyl ether acetate, and the precipitate was removed by filtration. The collected filtrate was added dropwise to a methanol solution, resulting in reprecipitation. The obtained precipitate was filtered by suction, and the filtered product was dried at 60° C. overnight under reduced pressure. As a result, 6.42 g of resin was obtained as a gray powder. The resulting polymer corresponded to formula (1-2). The weight average molecular weight Mw measured by GPC in ...

synthesis example 3

[0092]In a two-neck flask, 8.00 g of the compound 1, 3.06 g of 1-naphthaldehyde (available from Tokyo Chemical Industry Co., Ltd.), 32.83 g of propylene glycol monomethyl ether acetate, 8.21 g of N-methyl-2-pyrrolidinone (available from KANTO CHEMICAL CO., INC.), and 2.26 g of methanesulfonic acid (available from Tokyo Chemical Industry Co., Ltd.) were placed. The mixture was then heated to 150° C., and stirred under reflux for about 20 hours. After completion of the reaction, the mixture was diluted with 19.37 g of propylene glycol monomethyl ether acetate, and the precipitate was removed by filtration. The collected filtrate was added dropwise to a methanol solution, resulting in reprecipitation. The obtained precipitate was filtered by suction, and the filtered product was dried at 60° C. overnight under reduced pressure. As a result, 6.58 g of resin was obtained as a gray powder. The resulting polymer corresponded to formula (1-3). The weight average molecular weight Mw measured...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
temperatureaaaaaaaaaa
temperatureaaaaaaaaaa
temperatureaaaaaaaaaa
Login to View More

Abstract

A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

Description

TECHNICAL FIELD[0001]The present invention relates to a resist underlayer film-forming composition using an indolocarbazole novolak resin.BACKGROUND ART[0002]Various polymerizations of polymer resins have been investigated. In particular, a polymer including a cyclic structure such as novolak has been widely used from the field of fine processing involved in a photoresist and the like to the field of general processing involved in parts for automobiles and houses. Such a polymer has high heat resistance and is applicable to special applications. Therefore, development of the polymer is presently progressed. As a monomer including a cyclic structure, a structure such as benzene, naphthalene, anthracene, pyrene, and fluorene is generally known. It is known that the monomer forms a novolak with a monomer having an aldehyde group. On the other hand, a carbazole having a structure similar to fluorene has also similar characteristics. It is obvious that a part of a benzene ring adjacent t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(United States)
IPC IPC(8): G03F7/11G03F7/20G03F7/40C08G16/02
CPCG03F7/11G03F7/2059G03F7/2002G03F7/40C08G16/0268H01L21/0274C08G12/26C09D161/26C08G16/02G03F7/039G03F7/0045H01L21/0271G03F7/091
Inventor TOKUNAGA, HIKARUSAITO, DAIGOHASHIMOTO, KEISUKESAKAMOTO, RIKIMARU
Owner NISSAN CHEM IND LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com