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Dry etching gases and method of dry etching

A dry etching and gas technology, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of high industrial cost, achieve the effect of small impact, safe use and short life

Inactive Publication Date: 2007-08-08
NAT INST OF ADVANCED IND SCI & TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology has the problem of high industrial cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0097] The following examples are given to illustrate the present invention in more detail, but the present invention is not limited to the following examples. It should be noted that, unless otherwise specified, "parts" means "parts by weight".

[0098] In addition, the purity and yield of a compound were determined by the following GC (gas chromatography) analysis.

[0099] Measuring machine: G-5000 manufactured by Hitachi, Ltd.

[0100] Column: Neutrabond-1 (length 60m, inner diameter 0.25mm, film thickness 1.5μm)

[0101] Column temperature: fixed at 40°C for 10 minutes, then raised to 240°C within 10 minutes

[0102] Injection temperature: 200°C

[0103] Carrier gas: nitrogen (flow 1mL / min)

[0104] Detector: FID, sample volume: 1 μl

[0105] Internal standard: n-butane

preparation example 1

[0106] [Preparation Example 1] Preparation of a sample for dry etching of bis(trifluorovinyl)ether

[0107] (1-a) FOCCF 2 CF 2 OCF (CF 3 ) Synthesis of COF

[0108] This compound was synthesized according to the description in Dutch Patent No. 6605656 (Chemical Abstracts, Vol. 66, 65088s).

[0109] The autoclave made of SUS316 was fully dried and placed in an argon atmosphere. 5 parts of cesium fluoride, 50 parts of dry diethylene glycol dimethyl ether, and 90 parts of difluoromalonyl difluoride (manufactured by SynQuest) were charged into the autoclave, and the reactor was immersed in a dry ice / acetone bath and cooled. to -78°C.

[0110] 98 parts of hexafluoropropylene oxide (manufactured by SynQuest) were slowly supplied into the autoclave through a cylinder. The reaction mixture was stirred at -78°C for 3 hours. The reaction mixture was separated into two layers, and only the lower layer was taken out from the bottom valve of the autoclave. The separated lower layer...

manufacture example 2

[0116] [Production Example 2] Preparation of a sample for dry etching of hexafluoro-3-pentyn-2-one

[0117] (2-a) Synthesis of Trifluoroacetylmethylenetriphenylphosphorane

[0118] This compound was synthesized according to the method described in literature (Synthesis, 1984, Vol. 11, 924).

[0119] The glass reactor equipped with a three-way stopcock was fully dried and placed in an argon atmosphere. 250 parts of methyl triphenyl bromide (manufactured by Tokyo Chemical Industry Co., Ltd.) and 2500 parts of dry diethyl ether were placed in this reactor, and the reactor was cooled to -78°C. 392 parts of a 1.9 M cyclohexane-diethyl ether solution of phenyllithium (manufactured by Kanto Chemical Co., Ltd.) was slowly dropped there, and stirred for 1 hour. Further, a solution obtained by dissolving 66 parts of ethyl trifluoroacetate (manufactured by Tokyo Chemical Industry Co., Ltd.) in dry diethyl ether was slowly added dropwise at -78°C, followed by stirring for 1.5 hours. Th...

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PUM

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Abstract

A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F / C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma. The dry etching gases can be safely used, are reduced in influence on the global environment, and can highly selectively dry-etch a semiconductor material at a high dry etching rate to form a satisfactory pattern shape. The dry etching method employs either of these dry etching gases.

Description

technical field [0001] The present invention relates to a dry etching gas useful in the field of semiconductor device manufacture, and a dry etching method using the dry etching gas. Background technique [0002] In recent years, VLSI (Large Scale Integration), ULSI (Ultra Large Scale Integration) and the like have shown that semiconductor devices are becoming more highly integrated and have higher performance. Consequently, the technical requirements for dry etching gases used in the manufacture of semiconductor devices have become increasingly stringent. [0003] Currently, saturated fluorocarbons such as carbon tetrafluoride and octafluorocyclobutane are mainly used as dry etching gases. However, the life of the above-mentioned gases in the atmosphere is extremely long, exceeding thousands of years, which has a negative impact on global warming and limits their use. Therefore, as a substitute for the above-mentioned gases, hexafluoro-1,3-butadiene, hexafluoro-2-butyne, ...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
Inventor 关屋章杉本达也山田俊郎间濑贵信
Owner NAT INST OF ADVANCED IND SCI & TECH
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