One-dimensional embedded with hetero-junction photocatalyst intermingle with TiO2 and preparation and use thereof

A photocatalyst and heterojunction technology, applied in physical/chemical process catalysts, metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, etc., can solve problems such as photocatalytic immobilization, and achieve large adsorption performance , simplified production process, and good application prospects

Active Publication Date: 2008-10-08
ZHEJIANG ZHONGDE IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitations of technical methods, most technologies only focus on one aspect of promoting electron-hole separation of photocatalysts or realizing their visible light conversion. There is no catalyst or preparation method that couples these two aspects to realize the high-efficiency visible light catalyst. preparation
In addition, the above-mentioned catalysts and methods also face the problem of photocatalytic immobilization in practical applications.

Method used

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  • One-dimensional embedded with hetero-junction photocatalyst intermingle with TiO2 and preparation and use thereof

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Experimental program
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Effect test

Embodiment 1

[0049] Gold was selected as the crystal growth catalyst, ammonia gas as the non-metallic doping source, and titanium tetraisopropoxide as TiO 2 The precursor, tin oxide is the semiconductor corresponding to the heterojunction, and tin chloride is the precursor of tin oxide. Heat titanium tetraisopropoxide to 60°C and tin chloride to 40°C. The gold-loaded glass is placed in the constant temperature zone in the middle of the tube furnace, and helium gas is introduced at a flow rate of 100ml / min. Raise the temperature to 400°C and keep it warm for 0.5h. Open the valve, bring the gasified titanium tetraisopropoxide into the vaporized titanium tetraisopropoxide by helium, and feed ammonia gas at the same time, the flow rate is 150ml / min, and grow TiO 2 For nanowires, the growth temperature is 400° C., and the growth time is 0.5 h. Control the gas source through the valve, stop the gasification of titanium tetraisopropoxide and ammonia gas, and switch to the gasification of tin c...

Embodiment 2

[0051] Select cobalt as crystal growth catalyst, nitrous oxide as non-metallic doping source, and n-butyl titanate as TiO 2 The precursor, zinc oxide is the semiconductor corresponding to the heterojunction, and diethyl zinc is the precursor of zinc oxide. Heat n-butyl titanate to 95°C and diethyl zinc to -18°C. The cobalt-loaded ceramics are placed in the constant temperature zone in the middle of the tube furnace, and nitrogen gas is introduced at a flow rate of 200ml / min. Raise the temperature to 450°C and keep it warm for 0.5h. Open the valve, and the gasified n-butyl titanate is brought into by nitrogen gas, and nitrous oxide is introduced at the same time, with a flow rate of 80ml / min, to grow TiO 2 For nanowires, the growth temperature is 450° C., and the growth time is 3.0 h. Control the gas source through the valve, stop feeding gasified n-butyl titanate and nitrous oxide, and switch to feeding gasified diethyl zinc. 2 ZnO nanowires are grown on the top of the nan...

Embodiment 3

[0053] Select iron as crystal growth catalyst, ammonia as non-metallic doping source, n-butyl titanate as TiO 2 The precursor, tin oxide is the semiconductor corresponding to the heterojunction, and tin chloride is the precursor of tin oxide. Heat n-butyl titanate to 85°C and tin chloride to 55°C. The gold-loaded glass is placed in the constant temperature zone in the middle of the tube furnace, and nitrogen gas is introduced at a flow rate of 200ml / min. Raise the temperature to 400°C and keep it warm for 0.5h. Open the valve, and the vaporized n-butyl titanate is brought in by nitrogen gas, and ammonia gas is introduced at the same time, with a flow rate of 150ml / min, to grow TiO 2 For nanowires, the growth temperature is 500° C., and the growth time is 4.0 h. The gas source is controlled by the valve, the gasified n-butyl titanate and ammonia gas are stopped, and the gasified tin chloride is fed in instead, and the TiO 2 Growth of SnO on top of nanowires 2 For nanowires...

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Abstract

The invention discloses a heterojunction-embedded photocatalyst with one-dimensional doping TiO2 and a preparation method and an application thereof. The catalyst has a one-dimensional structure, which contains TiO2/SnO2 heterojunction structure, or TiO2/ZnO heterojunction structure, or TiO2/SnO2 heterojunction structure and TiO2/ZnO heterojunction structure by modification with nonmetal doping. The required catalyst is prepared by chemical deposition method under the condition that crystal growth catalyst exists by alternate switching gas sources such as different precursors, impurity gas, etc. to realize the alternate growth of different semiconductors, which has higher photocatalysis degradation capacity of indoor contamination under ultraviolet light and visible light.

Description

technical field [0001] The invention belongs to the technical field of chemical industry and environmental protection, and relates to a photocatalyst and its preparation and application, especially to a kind of embedded heterojunction one-dimensional doped TiO 2 Photocatalyst, preparation method of the catalyst and application in indoor air pollution. Background technique [0002] With the acceleration of industrialization and urbanization, indoor air pollution is becoming more and more serious. Among them, VOCs (volatile organic compounds) have many types, high toxicity and low concentration, which directly affect people's health and life. In order to control indoor air pollution, people often use methods such as opening windows for ventilation, planting green plants, and activated carbon adsorption, but the effect of common treatment methods is not ideal. Some treatment methods, such as activated carbon adsorption, only transfer indoor air pollutants from the gas phase to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J21/06B01J23/14B01J23/06A61L9/22
Inventor 赵伟荣郭森吴忠标
Owner ZHEJIANG ZHONGDE IND
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