Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing and duplicating three-dimensional micro-nano structure stamps in batches

A technology of micro-nano structure and replication method, which is applied in the direction of nano-structure manufacturing, micro-structure technology, micro-structure device, etc., can solve the problems of easy damage of stamps, difficulty in processing complex patterns, slow electron beam etching, etc., and achieve extended use The effect of longevity

Inactive Publication Date: 2009-12-30
HOHAI UNIV CHANGZHOU
View PDF7 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The traditional stamp material is silicon or quartz. The disadvantage is that the material itself is brittle. In addition, heat and pressure are required during hot embossing, so the stamp is easily damaged after repeated embossing.
[0006] After literature search, it was found that Mohamed K., Alkaisi M.M., Blaikie R.J. et al. wrote "Fabrication of three dimensional structures for an UV curable nanoimprint lithography mold using variable dosecontrol with critical-energy electron beam exposure" ("Using the change of electron beam exposure variable dose to process the processing of three-dimensional structure template suitable for ultraviolet nanoimprinting", "Vacuum Science and Technology B"), the principle is to adjust The dose of the electron beam is used to form a three-dimensional structure pattern during electron beam exposure. This template is suitable for UV imprinting technology. It needs to accurately adjust the exposure dose of the electron beam, and the electron beam etching is relatively slow, so this method is difficult to be suitable for processing both Intricate patterns with microscale and nanoscale

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0017] The present invention is further described as follows: the preparation method of the three-dimensional micro-nano structure stamp is specifically divided into two steps:

[0018] 1. Preparation of micron stamps by UV-LIGA process

[0019] First prepare a UV-LIGA mask, and then use ultraviolet exposure to form micron patterns on the photoresist of the silicon wafer. The wavelengths of ultraviolet light are 436nm, 405nm, 365nm, 248nm, 193nm, and 157nm. Then use the glue as a mask to perform RIE (reactive ion etching, the same below) etching on the silicon, and remove the glue to form a silicon micro-stamp. Then a thin layer of metal is deposited on the silicon by sputtering, and the metal is formed on the silicon by electroplating, and finally the silicon material is removed by wet etching to obtain a metal micro-stamp.

[0020] 2. FIB etches micron stamps to prepare micronano patterns

[0021] First import the micro-nano pattern into the FIB equipment, and then adjust ...

Embodiment 1

[0025] First prepare a UV-LIGA mask, and then use ultraviolet light with a wavelength of 365nm to expose, form a micron pattern on the photoresist of the silicon wafer, and then use the glue as a mask to perform RIE etching on the silicon, and remove the glue to form Silicon micron stamp. Import the micro-nano pattern into the FIB equipment, then adjust the etching parameters of the FIB, and perform direct etching at the designated position of the micron stamp. The ion source is gallium ions, the ion beam energy is 1kV, the etching current is 10pA, and the spot etching time is 0.05ms. Finally, a pre-set pattern is formed on the micro-stamp.

[0026] Stir the mixture of polydimethylsiloxane prepolymer and curing agent evenly at a ratio of 10:1, degas it, cast or spin coat it on the three-dimensional stamp, and peel off the polydimethylsiloxane from the stamp after curing. alkane, and finally obtain a flexible polydimethylsiloxane three-dimensional complex micro-nano structure...

Embodiment 2

[0028]First prepare a UV-LIGA mask, then use ultraviolet exposure with a wavelength of 365nm to form a micron pattern on the photoresist of the silicon wafer, then use the glue as a mask to perform RIE etching on the silicon, and remove the glue to form a micron pattern on the silicon wafer. seal. Then a thin layer of metal nickel is deposited on the silicon by sputtering, and a metal nickel layer is formed on the silicon by electroplating, and finally the silicon material is removed by wet etching to obtain a metal nickel micro-stamp. Import the micro-nano pattern into the FIB equipment, then adjust the etching parameters of the FIB, and perform direct etching at the designated position of the micron stamp. The ion source is gallium ions, the ion beam energy is 20kV, the etching current is 30pA, and the spot etching time is 0.1ms. Finally, a pre-set pattern is formed on the micro-stamp.

[0029] Heat embossing of the thermoplastic polymer polymethylmethacrylate with a stamp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing and duplicating three-dimensional micro-nano structure stamps in batches based on an UV-LIGA process and FIB etching technology. The method comprises the following steps of: firstly preparing a nano stamp by the UV-LIGA process; then carrying out etching on the nano stamp to prepare a micro-nano pattern by FIB equipment; making the ion beam capacity between 1 and 60 kV, the etching current between 1 and 100 pA, and the point etching time between 0.01 and 1ms; and carrying out nano embossing on polymer of the obtained three-dimensional micro-nano structure stamps by a hot embossing or soft etching method. The heating temperature in the hot embossing method is higher than the glass transition temperature of the polymer by 10 to 100 DEG C, the added pressure is between 100 and 30 kN, and the ratio of polydimethylsiloxane prepolymer in the soft etching method to a curing agent is between 9 to 1 and 11 to 1. The method can rapidly process the pattern with nano-dimension, and can continuously process the nano-pattern in the pattern so as to prepare the three-dimensional complex micro-nano pattern with different lengths, widths and heights on the same stamp according to the requirements. The method can prepare pressure-withstanding metal stamps in batches and prolongs the service life of the stamps.

Description

technical field [0001] The invention relates to a method for preparing a stamp, specifically a method for processing three-dimensional complex micro-nano structures using UV-LIGA (ultraviolet lithography electroforming, the same below) technology and FIB (focused ion beam, the same below) etching technology The invention relates to a stamp and a method for batch-replicating three-dimensional complex micro-nano structure stamps by using nano-imprinting technology, which belongs to the field of nano-imprinting, micro-nano pattern transfer and micro-electro-mechanical systems. Background technique [0002] MEMS is the organic integration of high technologies such as microelectronics, precision machinery, biochemistry and information processing. MEMS technology is widely used in biomedicine, precision instruments, environmental protection, aerospace, military communications and other fields. For example, using MEMS technology to make all-optical switches that break through commu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81C5/00B82B3/00B41K1/00G03F7/00
Inventor 孙洪文林善明
Owner HOHAI UNIV CHANGZHOU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com