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Cu-Sn-Zn-S semiconductor material with adjustable forbidden band width and preparation method thereof

A technology of cu-sn-zn-s and bandgap width, applied in chemical instruments and methods, tin compounds, inorganic chemistry, etc., to achieve stable properties, high environmental friendliness, and low cost

Inactive Publication Date: 2010-08-04
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But until now, no material satisfying all three criteria has been reported

Method used

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  • Cu-Sn-Zn-S semiconductor material with adjustable forbidden band width and preparation method thereof
  • Cu-Sn-Zn-S semiconductor material with adjustable forbidden band width and preparation method thereof
  • Cu-Sn-Zn-S semiconductor material with adjustable forbidden band width and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Embodiment 1: a kind of preparation method of the Cu-Sn-Zn-S semiconductor nanoparticle of adjustable bandgap width, the steps are as follows:

[0030] 1) The amount of material taken by weighing is 0.2 mmol of cupric chloride, 0.1 mmol of stannous chloride and 0.7 mmol of zinc chloride, dissolved in 50 milliliters of absolute ethanol, adding 2 mmol of thiourea, and ultrasonically making it dispersion. The obtained solution was distilled off ethanol at 50° C. by a rotary evaporator to obtain a precursor.

[0031] 2) The precursor is dispersed in 10 ml of oleylamine solution under ultrasonic conditions. Heat at 200°C for 10 minutes. After cooling to room temperature, absolute ethanol was added dropwise to precipitate the nanoparticles.

[0032] 3) The precipitate was washed several times with absolute ethanol, and redispersed in toluene to obtain monodisperse Cu 0.2 sn 0.1 Zn 0.7 S nanoparticles. The optical properties and bandgap of nanoparticles, such as image...

Embodiment 2

[0033] Embodiment 2: a kind of preparation method of the Cu-Sn-Zn-S semiconductor nanoparticle of adjustable bandgap width, the steps are as follows:

[0034] 1) The amount of material taken by weighing is 0.2 mmol of cupric chloride, 0.1 mmol of stannous chloride and 0.7 mmol of zinc chloride, dissolved in 20 milliliters of ethylene glycol, adding 2 mmol of thiourea, and ultrasonically dispersion.

[0035] 2) Add 5 ml of oleylamine, stir and heat at 200° C. for 10 minutes. After cooling to room temperature, the precipitate was collected.

[0036] 3) The precipitate was washed several times with absolute ethanol, and redispersed in toluene to obtain monodisperse Cu 0.2 sn 0.1 Zn 0.7 S nanoparticles.

Embodiment 3

[0037] Embodiment 3: a kind of preparation method of the Cu-Sn-Zn-S semiconductor nanoparticle of adjustable bandgap width, the steps are as follows:

[0038] 1) The amount of material taken by weighing is 0.2 mmol of cupric chloride, 0.1 mmol of stannous chloride and 0.7 mmol of zinc chloride, dissolved in 520 milliliters of ethylene glycol, adding 2 mmol of thiourea, and ultrasonically dispersion.

[0039] 2) Add 5 ml of oleylamine and 20 ml of liquid paraffin, and heat at 200° C. for 10 minutes. After cooling to room temperature, the liquids were separated, the organic phase was diluted with n-hexane, and absolute ethanol was added dropwise to precipitate the nanoparticles.

[0040] 3) The precipitate was washed several times with absolute ethanol, and redispersed in toluene to obtain monodisperse Cu 0.2 sn 0.1 Zn 0.7 S nanoparticles.

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Abstract

The invention relates to a Cu-Sn-Zn-S semiconductor material with an adjustable forbidden band width and a preparation method thereof, which belong to the technical field of preparing inorganic materials. The semiconductor material has a general formula of (Cu2Sn)x / 3Zn1-xS, wherein x is the mol percent content of Cu and Sn in metallic elements. The preparation method comprises the following steps of: dissolving a divalent cupric salt, a divalent tin salt and a divalent zinc salt in a polar solvent or a nonpolar solvent; adding a sulfur source into the mixture, and mixing the sulfur source with the mixture uniformly; and heating the mixture at the temperature of between 180 and 280 DEG C, and taking a deposit to obtain the semiconductor material. The semiconductor material contains no toxic elements, has very high environmental friendliness, can be prepared from a raw material with an abundant storage and a low price by a green method, and has a low cost and good repeatability; and the material has stable performance, and the forbidden band width can be adjusted between 3.5 and 0.9 electron volt. The form of the material can be nano particles, films and bulk phase material, and the material can be applied in the fields of solar batteries, microelectronic devices, environmental monitoring, pollutant disposal, biological detections and the like.

Description

technical field [0001] The invention relates to a new Cu-Sn-Zn-S semiconductor material with adjustable forbidden band width and a preparation method thereof, belonging to the technical field of inorganic material preparation. Background technique [0002] With the reduction of fossil fuel reserves, new sustainable energy sources, such as solar energy, hydro energy, wind energy, tidal energy, biomass energy, etc., have received extensive attention. The wind energy, water energy, wave energy, bioenergy and part of the tidal energy on the earth all come from the sun, even the fossil fuels on the earth (such as coal, oil, natural gas, etc.) are fundamentally the solar energy stored in ancient times . Moreover, solar energy is not only a primary energy source, but also a renewable energy source, which is rich in resources and has no pollution to the environment. Therefore, the key to solving today's energy problems is to further develop and utilize solar energy. [0003] Howe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00
Inventor 占金华代鹏程
Owner SHANDONG UNIV
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