Preparation method for ordered silicon nano-wires
A silicon nanowire and orderly technology, applied in the field of nano-device manufacturing process, can solve the problems of cracking, insufficient mechanical strength, and low crystallinity of silicon film, etc., and achieve the effect of strengthening mechanical strength, good process compatibility, and high deposition rate
Inactive Publication Date: 2012-01-04
NANYANG INST OF TECH
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Problems solved by technology
Due to the low crystallinity of the silicon film prepared by electron beam evaporation, the mechanical strength is not enough
As the anodized aluminum template corrodes, the silicon film gradually breaks into many small fragments, which cannot even be removed from the solution
[0003] Due to the large dispersion and disorder of silicon nanowires prepared by the general method in diameter, length and shape, it brings great difficulties to study its photoelectric properties and device applications.
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[0021] A method for preparing ordered silicon nanowires, characterized in that it comprises the steps of:
[0022] (1) First, clean the high-purity aluminum sheet with a purity of 99.99% in an ultrasonic cleaner with acetone for 10 minutes to remove the grease on the surface, and then wash it with perchloric acid and anhydrous water at a volume ratio of 1 / 2 to 1 / 10 The electrochemical polishing is carried out in the ethanol mixed solution, the time is 5min-10min, and the polishing voltage is 10V-20V. Preferably, the electrochemical polishing is carried out for 10 minutes in a mixed solution of perchloric acid and absolute ethanol with a volume ratio of 1:4, and the polishing voltage is 20V.
[0023] (2) Perform anodic oxidation with an oxalic acid solution with an electrolyte of 0.1mol / L-0.5mol / L, the voltage is 10V-40V, the temperature does not exceed 10°C, the initial anodic oxidation time is 10min-15min, and then soaked in chromic acid for 5min ~20min, remove the disordere...
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Abstract
The invention discloses a preparation method for ordered silicon nano-wires in the technical field of nano-device manufacturing technology, which is characterized by comprising the following steps of: cleaning and electromechanically polishing an aluminum sheet, preparing an anodized aluminum template by using a two-step anodization method, preparing a composite film of silicon and anodized aluminum by using a pulsed laser deposition technique, and etching off the anodized aluminum template to prepare the silicon nano-wires with consistent sizes and uniformly distributed on a silicon film. Inthe method, ordered silicon nano-wires with different diameters can be conveniently prepared by controlling the aperture of the anodized aluminum template, and have the characteristics that the ordered silicon nano-wires are parallel to each other, uniformly distributed and vertical to the substrate surface; moreover, different silicon nano-wires with different dosage concentrations can be obtained by selecting different silicon sheets with different dosage concentrations as targets for pulsed laser deposition.
Description
technical field [0001] The invention belongs to the technical field of nano-device manufacturing technology, and in particular relates to a method for preparing sequenced silicon nanowires. technical background [0002] Silicon nanowires and their arrays are quasi-one-dimensional semiconductor optoelectronic information materials, which have potential applications in field-effect devices, single-electron storage devices, photodetection devices, field emission devices, nanosensor devices, high-efficiency light-emitting devices, and integration technologies. The preparation methods of silicon nanowires mainly include: thermal chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), low pressure chemical vapor deposition (LPCVD), laser ablation deposition (LAD), thermal evaporation, electron beam evaporation ( EBE), solution method and hydrothermal method etc. The growth mechanisms of silicon nanowires mainly include: gas-liquid-solid (VLS), gas-soli...
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IPC IPC(8): C25D11/12C23C14/18C23C14/28C23C14/58
Inventor 石明吉陈兰莉田金云尹应鹏于家辉丁淑娟
Owner NANYANG INST OF TECH