Silicon-based near infrared light emitting material and preparation method

Abstract

The invention relates to a silicon-based near infrared light emitting material and a preparation method, which belong to the technical field of communication materials. The material comprises a monocrystalline silicon substrate or a quartz substrate. A dehydrogenated boron-phosphor codoped noncrystalline silicon / silicon dioxide multilayer film is deposited on the substrate. Boron-phosphor nano silicon quantum dots nucleated and crystallized in noncrystalline silicon thin films are formed among silicon dioxide thin films of the multilayer film. The preparation method comprises the following steps of: preparing the boron-phosphor codoped noncrystalline silicon / silicon dioxide multilayer film by adopting plate capacitor type radio frequency plasma enhanced chemical vapor deposition (PECVD); and performing post-treatment, quenching and thin film crystallization. The nanocrystalline silicon material with a multilayer structure has a combination level lower than a silicon band gap, and simultaneously solves the problem of low light-emitting efficiency of crystalline silicon materials so as to lay a foundation for optical interconnect. The preparation method is compatible to a microelectronic technology and favorable for large-scale production.

Description

technical field [0001] The invention relates to a silicon-based material, especially a near-infrared light-emitting silicon-based material, and also relates to a preparation method thereof, belonging to the technical field of communication materials. Background technique [0002] Silicon-based semiconductors are the cornerstone of the modern microelectronics industry. Existing semiconductor light-emitting devices are mainly made of non-silicon-based compound materials, which are not compatible with silicon microelectronics technology. [0003] The preparation of silicon-based light sources is mostly based on silicon nanostructures. Although the nanostructure of silicon improves the luminous efficiency, due to the existence of quantum effects, the bandwidth is broadened, and the emission wavelength of light is blue-shifted to the visible light band accordingly. [0004] To achieve optical interconnection, the wavelength range of the required light source should be in the op...

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Problems solved by technology

However, there are many problems in this system: such as low coupling efficiency between Er and silicon nanocrystals, free carrier absorption, etc., especially the introduction of unnecessary metal impurities in the integrated circuit process, because this will affect the working characteristics of the chip

[0007] Chinese patent applications with application numbers 200320100175.7, 200710178159.2, and 201110020954.5 disclosed silicon-based quantum dot infrared detectors, transparent conductive films, and a silicon-based long-wave infrared waveguide, respectively, but failed to solve the problem of silicon-based materials emitting near-infrared light

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