A high-efficiency radiation-resistant laser crystal and its preparation method
A laser crystal, anti-radiation technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., to achieve the effect of high-efficiency pumping
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Embodiment 1
[0020] Example 1: Growing Yb 3+ The concentration is 10at%, Ho 3+ Concentration of 1at% Gd 2.67 Yb 0.3 Ho 0.03 sc 2 Ga 3 o 12 the crystal
[0021] Yb, Ho:GSGG crystal refers to Yb 3+ The doping concentration is between 5-20at%, Ho 3+ The doping concentration of ions is between 0.5-5 at%. Yb in this embodiment 3+ The concentration is 10at%, Ho 3+ The concentration is 1 at%, ie x=0.1, y=0.01. According to the chemical reaction formula 3xYb 2 o 3 +3yHo 2 o 3 +3Gd 2 o 3 +3Sc 2 o 3 +2Ga 2 o 3 = 2Gd 3(1-x-y) Yb 3x Ho 3y sc 2 Ga 3 o 12 (where x=0.1, y=0.01) weighed, uniformly mixed and compacted, and sintered at 1300° C. for 48 hours using a solid-state method to obtain a Yb, Ho: GSGG polycrystalline raw material. Put 600 grams of Yb, Ho: GSGG polycrystalline raw materials into an iridium crucible with a diameter of 60mm, put the iridium crucible into a laser crystal pulling furnace, and fill the furnace with nitrogen as a protective gas after vacuuming (1...
Embodiment 2
[0022] Example 2: Growing Yb 3+ The concentration is 20at%, Ho 3+ Concentration of 0.5at% Gd 2.385 Yb 0.6 Ho 0.015 sc 2 Ga 3 o 12 the crystal
[0023] Yb, Ho:GSGG crystal refers to Yb 3+ The concentration is between 5-20at%, Ho 3+ The doping concentration of ions is between 0.5-5 at%. Yb in this embodiment 3+ The concentration is 20at%, Ho 3+ The concentration is 0.5 at%, ie x=0.2, y=0.005. According to the chemical reaction formula 3xYb 2 o 3 +3yHo 2 o 3 +3Gd 2 o 3 +3Sc 2 o 3 +2Ga 2 o 3 = 2Gd 3(1-x-y) Yb 3x Ho 3y sc 2 Ga 3 o 12 (wherein x=0.2, y=0.005) weighed, and the oxides weighed were respectively mixed with HNO 3 Mix evenly after dissolving, co-titrate the mixed solution with ammonia water by liquid-phase co-precipitation method, keep the pH value at about 12, and centrifuge the mixed solution after co-precipitation to obtain the gel-like precursor, wash and dry Dry, and finally sinter at 1000°C for 12 hours to obtain Yb, Ho: GSGG polycrystal...
Embodiment 3
[0024] Example 3: Growing Yb 3+ The concentration is 8at%, Ho 3+ Concentration of 2at% Gd 2.7 Yb 0.24 Ho 0.06 sc 2 Ga 3 o 12 the crystal
[0025] Yb, Ho:GSGG crystal refers to Yb 3+ The concentration is between 5-20at%, Ho 3+ The doping concentration of ions is between 0.5-5 at%. Yb in this embodiment 3+ The concentration is 8at%, Ho 3+ The concentration is 2at%, ie x=0.08, y=0.02. The polycrystalline raw material is prepared by the sol-gel method, and the oxide raw material is prepared according to the chemical reaction formula 3xYb 2 o 3 +3yHo 2 o 3 +3Gd 2 o 3 +3Sc 2 o 3 +2Ga 2 o 3 = 2Gd 3(1-x-y) Yb 3x Ho 3y sc 2 Ga 3 o 12 (wherein x=0.08, y=0.02) take by weighing, wherein Ga 2 o 3 Use Ga alkoxide instead, and the other oxides weighed by HNO 3 After dissolving, it is evenly mixed with Ga alkoxide solution to form a sol, which is left to stand for 24 hours to form a gel, dried, and finally sintered at 1000°C for 12 hours to obtain Yb, Ho:GSGG pol...
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