Barium strontium titanate dielectric film prepared through micro-arc oxidation and method thereof

A technology of micro-arc oxidation and barium strontium titanate, applied in electrolytic coatings, surface reaction electrolytic coatings, coatings, etc., can solve problems such as few dielectric films, single types of films, undisclosed performance parameters, etc., and achieve equipment investment Small size, excellent dielectric properties, and convenient preparation

Inactive Publication Date: 2012-01-04
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, there are few studies on the preparation of dielectric films on the surface of titanium metal by micro-arc oxidation technology. The patent application number 200610155879.2 describes the preparation of BaTiO on the surface of titanium metal. 3 The method of doping metal ion dielectric thin film, but its performance parameters are not disclosed, and the types of thin films prepared are relatively simple

Method used

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  • Barium strontium titanate dielectric film prepared through micro-arc oxidation and method thereof
  • Barium strontium titanate dielectric film prepared through micro-arc oxidation and method thereof
  • Barium strontium titanate dielectric film prepared through micro-arc oxidation and method thereof

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Embodiment 1

[0031] (1) Configure the electrolyte: Sr(CH 3 COO) 2 The solution is electrolyte, the volume of electrolyte is 400mL, the solution concentration is 0.4mol / L, it is stirred evenly on the electromagnetic heating stirrer, the heating temperature is set to 60°C, and the stirring time is 20min.

[0032] (2) Set the electrical parameters of the DC micro-arc oxidation power supply: DC pulse power supply is used, the pulse waveform is square wave, the mode is constant current mode; the current density is 20A / dm 2 (The size of the substrate Ti is 20mm*20mm*2.5

[0033] mm, Ti element Wt% is 96.47%), the pulse frequency is 100Hz, the duty cycle is 85%; the processing time is 25min.

[0034] (3) Micro-arc oxidation treatment: After the Ti substrate is polished with sandpaper, it is pretreated with a mixture of hydrofluoric acid and nitric acid at a volume ratio of 1:3, and then washed in acetone and distilled water respectively, and dried. The Ti matrix is ​​connected to the anode and...

Embodiment 2

[0037] (1) Configure the electrolyte: Ba(CH 3 COO) 2 The solution is an electrolyte, the volume of the electrolyte is 400mL, the molar concentration of the solution is 0.6mol / L, it is evenly stirred on an electromagnetic heating stirrer, the heating temperature is set to 60°C, and the stirring time is 15min.

[0038] (2) Set the electrical parameters of the DC micro-arc oxidation power supply: DC pulse power supply is used, the pulse waveform is square wave, the mode is constant current mode; the current density is 15A / dm 2 (The size of the substrate Ti is 20mm*20mm*2.5

[0039] mm, Ti element Wt% is 96.35%), the pulse frequency is 200Hz, the duty cycle is 85%; the processing time is 25min.

[0040](3) Micro-arc oxidation: After the Ti substrate is polished with sandpaper, it is pretreated with a mixture of hydrofluoric acid and nitric acid at a volume ratio of 1:3, and then washed in acetone and distilled water respectively, and the Ti substrate is dried. Connect to the an...

Embodiment 3

[0043] (1) Preparation of electrolyte: Ba(CH 3 COO) 2 and Sr(CH at a molar concentration of 0.3mol / L 3 COO) 2 Solution, the mixed solution mixed at a molar ratio of 1:1 is the electrolyte solution, the solution volume is 400mL, stirred evenly on an electromagnetic heating stirrer, the heating temperature is set to 60°C, and the stirring time is 20min.

[0044] (2) Set the electrical parameters of the DC micro-arc oxidation power supply: DC pulse power supply is used, the pulse waveform is square wave, the mode is constant current mode; the current density is 20A / dm 2 (The size of the substrate Ti is 20mm*20mm*2.5

[0045] mm, Ti element Wt% is 95.47%), the pulse frequency is 100Hz, the duty cycle is 85%; the processing time is 25min.

[0046] (3) Micro-arc oxidation: After the Ti substrate is polished with sandpaper, it is pretreated with a mixture of hydrofluoric acid and nitric acid at a volume ratio of 1:3, and then washed in acetone and distilled water respectively, an...

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Abstract

The invention discloses a barium strontium titanate dielectric film prepared through micro-arc oxidation and a method thereof. The method comprises the following steps: preparing electrolyte from barium acetate or strontium acetate or mixture thereof, wherein the molar concentration of the barium acetate solution is 0-2.0 mol / L and the molar concentration of the strontium acetate is 0-1.2 mol / L; treating with a direct-current pulse power supply for 6-60 min, wherein the current density is 10-50 A / dm<2>, the pulse frequency is 50-250 Hz, and the duty cycle is 60%-95%; connecting a titanium substrate with an anode, and keeping the temperature of the electrolyte at 50-60 DEG C during the reaction; and taking down the treated titanium after the reaction, washing with distilled water and drying. The method has simple working procedures and high film-forming speed; and the film and the titanium (Ti) substrate are in metallurgical bonding, and the film has excellent dielectric properties.

Description

technical field [0001] The invention relates to the technical field of electronic engineering, in particular to a method for preparing a strontium barium titanate dielectric thin film by micro-arc oxidation. Background technique [0002] In today's world, the requirements for miniaturization and high performance of electronic components and the development of thin film preparation technology have led to the emergence of dielectric thin film materials. Ba x Sr 1-x TiO 3 (x=0~1) The dielectric film has a high dielectric constant and a low dielectric loss. It is an ideal high-voltage ceramic capacitor preparation material and is known as the "pillar of the electronics industry". At present, there are many technologies for preparing titanate-based dielectric films, mainly including pulsed laser deposition, magnetron sputtering deposition, sol-gel method, metal-organic chemical vapor deposition method, etc. Although these methods have their own advantages and features, but ha...

Claims

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Application Information

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IPC IPC(8): C25D11/26
Inventor 李文芳王敏郭会勇黄文波
Owner SOUTH CHINA UNIV OF TECH
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