Method for preparing carbon-based thin film material with light soft metal surface

A technology of thin film materials and soft metals, applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as failure, poor bonding force and bearing capacity, large residual stress, etc., and achieve excellent bearing capacity and The effects of tribological properties, good bonding strength, and simple preparation process

Inactive Publication Date: 2012-05-16
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to the large difference in hardness, thermal expansion coefficient and structure between high-hardness diamond-like carbon film and light alloys such as aluminum and titanium, the residual stress between the carbon-based film formed on the surface of the aluminum alloy and the substrate is large, and the bonding force and The bearing capacity is very poor, and under the action of load, it is easy to peel off from the light alloy substrate and cause failure

Method used

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  • Method for preparing carbon-based thin film material with light soft metal surface
  • Method for preparing carbon-based thin film material with light soft metal surface

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Experimental program
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Effect test

Embodiment 1

[0021] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 3.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -200V, and perform argon plasma bombardment cleaning for 10 minutes.

[0022] B. Deposition gradient transition layer: adjust the flow rate of argon to maintain the chamber pressure at 2.5×10 -1 Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 6.0A, and the pulse bias voltage to -400V. After the transition layer thickness reaches 300nm, turn on the graphite target sputtering power supply, and increase the graphite target linearly sputtering current while reducing t...

Embodiment 2

[0025] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 1.0Pa. Turn on the pulse bias power supply, adjust the voltage value to -1000V, and carry out argon plasma bombardment cleaning for 10 minutes.

[0026] B. Deposition gradient transition layer: adjust the flow of argon gas to maintain the chamber pressure at 0.6Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 2.0A, and the pulse bias voltage to -600V, After the thickness of the transition layer reaches 200nm, turn on the sputtering power of the graphite target, linearly increase the sputtering current of the graphite target, and decreas...

Embodiment 3

[0028] A. Sample pretreatment: The polished titanium alloy and aluminum substrate samples were ultrasonically cleaned with absolute alcohol, distilled water, and acetone for 10 minutes, and then dried with nitrogen and placed in the deposition chamber. Pump the air pressure in the vacuum chamber to 6×10 -3 Below Pa, feed high-purity argon until the pressure is 0.5Pa. Turn on the pulse bias power supply, adjust the voltage value to -600V, and perform argon plasma bombardment cleaning for 30 minutes.

[0029] B. Deposition gradient transition layer: adjust the flow of argon gas to maintain the chamber pressure at 0.3Pa, turn on the titanium target sputtering power supply and pulse bias power supply, adjust the titanium target sputtering current to 8.0A, and the pulse bias voltage to -100V, After the thickness of the transition layer reaches 500nm, turn on the sputtering power of the graphite target, increase the sputtering current of the graphite target linearly, and decrease t...

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Abstract

The invention discloses a method for preparing a carbon-based thin film material with a light soft metal surface. Compound carbon thin film material prepared by the invention not only has excellent combination strength with a light soft metal substrate, but also expresses extremely excellent bearing ability and frictional property; the excellent performances can effectively solve the problems in function protection, friction, abrasion and corrosion of the surface of a light alloy movement member; and the method disclosed by the invention is simple in preparation progress of the thin film, and each in operation and control of operation parameters.

Description

technical field [0001] The invention relates to a method for preparing a carbon-based film material on the surface of light soft metal. Background technique [0002] Light alloy materials such as aluminum and titanium are widely used in aerospace, aviation, weapons, machinery, automobiles, transportation, petrochemical, textile, printing and other industries. A large number of applications in these fields involve the functional protection of the surface of light alloy moving parts and Friction, wear and corrosion issues. As a new type of high-performance lubricating film material, carbon-based film has a series of excellent properties such as high hardness, good chemical stability, low friction coefficient and wear rate, making it an ideal film material for surface modification of light alloys. . [0003] However, due to the large difference in hardness, thermal expansion coefficient and structure between high-hardness diamond-like carbon film and light alloys such as alum...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
Inventor 李红轩吉利陈建敏周惠娣刘晓红
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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