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Method for surface modification of copper indium gallium diselenide (Cu(In, Ga)Se2) film

A copper indium gallium selenide, surface modification technology, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of difficult precise control, poor reproducibility, high conductivity, etc., to overcome The equipment is expensive, the effect of increasing the bandgap width and increasing the bandgap width

Inactive Publication Date: 2012-09-26
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, CIGS-based thin-film solar cells have not yet achieved large-scale industrial operation, and there are still many problems to be solved urgently.
[0004] There are mainly two problems that are difficult to solve. The first problem is: during the deposition process, the surface of the film is easy to generate Cu with high conductivity and deteriorates the performance of the device. x Se secondary phase clusters and In oxides 2 o 3 etc., destroy the film morphology and uniformity
[0005] The second problem is that it is difficult to realize the gradient distribution of the bandgap of CIGS thin films
And due to the introduction of advanced, complex and expensive PVD technology, the cost has soared, precise control is difficult, the process is lengthy, and the reproducibility is poor, making it difficult to achieve large-scale and large-scale preparation

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] This example illustrates a method for surface modification of a CIGS thin film provided by the present invention.

[0025] Step (a): Copper Indium Gallium Selenium Prefabricated Layer Deposition Preparation

[0026] Preparation of Cu(In,Ga)Se by Potentiostatic Electrodeposition 2 , 1cm × 1cm Mo-coated glass, high-purity graphite sheet, saturated calomel (SCE) were used as working electrode, counter electrode and reference electrode. The electrolyte consists of CuCl 2 , InCl 3 , GaCl 3 、H 2 SeO 3 and a certain amount of NH 2 SO3 Na composition. PAR273A was used for constant potential electrochemical deposition, the electrode potential was -3.0V~-0.1V (vs. SCE), the deposition time was 2h, the deposition temperature was 45°C, and the deposition process was not stirred. The preset layer prepared by deposition was washed with deionized water and then dried. The technique of the constant potential electrodeposition process is well known to those skilled in the art. ...

Embodiment 2

[0036] This example illustrates a method for surface modification of a CIGS thin film provided by the present invention.

[0037] Step (a): Copper Indium Gallium Selenium Prefabricated Layer Deposition Preparation

[0038] The DM2450A vacuum coating machine is used to prepare the copper indium gallium selenide prefabricated layer, and the self-designed and processed Cu, In, Ga and Se independent evaporation sources, substrate holders and substrate heaters are installed inside the vacuum chamber. The evaporation source consists of a ceramic cylindrical crucible, a tungsten wire heater wound outside the crucible, and a thermocouple at the bottom of the crucible, and the temperature is controlled by an automatic temperature controller. The materials used for evaporation are all spherical particles with a purity of 99.999%. The finished products of the evaporation source are arranged in a font, all inclined at a slight angle, and the distance between the substrate and the evaporat...

Embodiment 3

[0049] This example illustrates a method for surface modification of a CIGS thin film provided by the present invention.

[0050] Step (a): Copper Indium Gallium Selenium Prefabricated Layer Deposition Preparation

[0051] Copper indium gallium selenide prefabricated layer is prepared by spraying pyrolysis method, which is well known to those skilled in the art. The present invention has no special requirements for the method of galvanizing treatment. This method is used in this embodiment to prepare copper indium gallium selenide with a thickness of 300nm Selenium prefab layers.

[0052] Step (b): Prefabricated layer vacuum annealing treatment

[0053] Place the prefabricated layer film obtained in step (a) in a tube resistance furnace for vacuum annealing, the annealing temperature is 650°C, and the annealing time is 0.25h. Annealing treatment to obtain the copper indium gallium selenide thin film.

[0054] Step (c): Surface coating modification of copper indium gallium s...

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Abstract

The invention discloses a method for surface modification of a copper indium gallium diselenide (Cu(In, Ga)Se2) film and relates to the technical field of photoelectric function materials and new energy. The method is characterized by comprising the following steps: depositing a metal film or an alloy film with a certain thickness on the (Cu(In, Ga)Se2) film, performing high temperature annealing on the (Cu(In, Ga)Se2) film under reactive atmosphere and carrying out a copper selenium secondary phase (CuxSe) reaction on the surface of the deposited metal or alloy and (Cu(In, Ga)Se2) film to form a copper selenium poly-metal compound with a wide band gap so as to fulfill the aim of removing CuxSe. By the surface modification method, the defect that toxicity exists and the environment cannot be protected in etching the CuxSe by the traditional modification method by adopting KCN (potassium cyanide) are overcome; the method has the advantages of being low in cost and high in reproducibility and being suitable for large-area film growth and the like; and with the adoption of method, the band gap width on the surface of the film can be improved, a gradient band gap is formed, the pn junction interface composition is obviously reduced, and the open-circuit voltage of a device is effectively improved.

Description

technical field [0001] The invention relates to a method for modifying the surface of a thin film, and in particular to a method for modifying the surface of a copper indium gallium selenium thin film. Background technique [0002] Solar cells are an effective way to solve the increasingly serious energy crisis and environmental pollution. The second-generation thin-film solar cells based on thin-film technology can greatly save raw materials and have low cost advantages, so they have become a research and development hotspot. In many thin film solar cells, the chalcopyrite structure chalcogen compound copper indium gallium selenide (chemical formula is CuIn 1-x Ga x Se 2 , x=0~1) Thin-film solar cells (referred to as CIGS solar cells) as light-absorbing layers have attracted the most attention due to their highest conversion efficiency, good stability, and simple preparation, and have become the focus and focus of research. [0003] Researchers at home and abroad have do...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 赖延清陈志伟张坤刘芳洋赵联波蒋良兴李劼刘业翔
Owner CENT SOUTH UNIV
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