Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Oxide semiconductor film and preparation method thereof, thin film transistor and preparation method

An oxide semiconductor and oxide technology, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, and devices that coat surfaces with liquids, and can solve problems such as low carrier mobility and unsatisfactory performance of thin-film transistors.

Active Publication Date: 2012-12-05
TSINGHUA UNIV +2
View PDF8 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is that in the prior art, the oxide film prepared by the solution method is affected by factors such as the film-forming properties of the precursor, and the performance of the thin-film transistor is not ideal and the carrier mobility is low. Further, it provides a Preparation method of oxide semiconductor thin film

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Oxide semiconductor film and preparation method thereof, thin film transistor and preparation method
  • Oxide semiconductor film and preparation method thereof, thin film transistor and preparation method
  • Oxide semiconductor film and preparation method thereof, thin film transistor and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0129] Embodiment 1, the preparation of zinc tin oxide thin film and its transistor and zinc tin oxide semiconductor thin film

[0130] Zinc tin oxide thin film has the advantages of rich and easily available raw materials, high transparency (with a band gap of 3.1 to 3.4eV), and good carrier transport performance.

[0131] The method for preparing zinc tin oxide semiconductor thin film with spin coating method is as follows:

[0132] (1) Preparation of precursor solution: Take Zn and Sn precursor materials zinc acetate and stannous chloride with a molar ratio of 1:1, add stabilizer ethylene glycol, dissolve in ethylene glycol monomethyl ether solvent, and stir well , until the solution is completely clarified, it generally takes 2 to 10 hours, and it is stirred for 4 hours in this embodiment. Set aside.

[0133] (2) Preparation of reaction solution: Before preparing the film, add a certain amount of water as a catalyst, stir until the solution is clarified to obtain a reactio...

Embodiment 2

[0149] Embodiment 2, the preparation of zinc tin oxide thin film and its transistor and zinc tin oxide semiconductor thin film

[0150] In this example, the zinc precursor used is zinc chloride, the tin precursor is tin tetraisopropoxide, the stabilizer is diethanolamine, the catalyst is ammonia water, the solvent is butanediol monomethyl ether, and other experimental conditions are the same as in the example 1. The molar ratio of zinc chloride, tin tetraisopropoxide, diethanolamine, and ammonia water is 0.3:0.3:2.0:1.5.

[0151] The 35nm thick zinc-tin oxide thin film prepared in the present embodiment measures its morphology (AFM figure, side length is 5 microns), such as Figure 8 . The zinc tin oxide thin film is very dense and flat, almost without any pinholes or crystal defects. The characterization parameters are as follows:

[0152] Scanning area: 5μm×5μm

[0153] Film valley value (P-V value) is 2.50nm

[0154] The root mean square roughness value (RMS value) is ...

Embodiment 3

[0156] Embodiment 3, the preparation of zinc tin oxide thin film and its transistor and zinc tin oxide semiconductor thin film

[0157] In this example, the heat treatment method adopted is to raise the temperature to 450° C. at a heating rate of 20° C. / min, and then treat at a constant temperature for 30 minutes. Other experimental conditions are the same as in Example 1.

[0158] The 30nm thick zinc-tin oxide thin film prepared in the present embodiment measures its morphology (AFM figure, side length is 5 microns), such as Figure 11 . The zinc tin oxide thin film has rough appearance and crystallization phenomenon. The characterization parameters are as follows:

[0159] Scanning area: 5μm×5μm

[0160] Film valley value (P-V value) is 95.9nm

[0161] The root mean square roughness value (RMS value) is 14.9nm

[0162] Using aluminum oxide thin film with a dielectric constant of 7.7 as the gate dielectric layer, an oxide thin film field effect transistor with zinc tin o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Carrier mobilityaaaaaaaaaa
Carrier mobilityaaaaaaaaaa
Carrier mobilityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of an oxide semiconductor film, relating to the field of a thin film transistor. The preparation method comprises the following steps of: (1) preparing pecursor solution; (2) preparing reaction solution, adding a catalyst with an OH or OR group into the pecursor solution, agitating and fully dissolving to obtain the reaction solution, and (3) preparing the oxide semiconductor film. The invention also discloses the oxide semiconductor film prepared by the method, the thin film transistor including the oxide semiconductor film and the preparation of the thin film transistor. According to the preparation method of the oxide semiconductor film, the reaction process of preparing the semiconductor film by a solution method is changed by adding the catalyst into the pecursor solution, and the problems that the performance of the thin film transistor is not ideal and the carrier mobility is low due to effects of factors such as the film-forming property of the pecursor on the oxide film prepared by the solution method in the prior art are solved.

Description

technical field [0001] The present invention relates to the field of thin film transistors, in particular to a method for preparing an oxide semiconductor thin film applied to transistors, to an oxide semiconductor thin film prepared by applying the preparation method, and to a thin film transistor using the oxide semiconductor thin film, including the A method of fabricating a thin film transistor. Background technique [0002] The use of oxides to make thin film transistors has attracted much attention in recent years. They have high mobility and transmittance. Traditional amorphous silicon has low mobility and strong photosensitivity. The process of polycrystalline silicon thin film transistors is complicated, and organic thin film transistors are difficult to overcome. Due to the weakness of low lifetime and low mobility, fully transparent thin film transistors made of oxides used in active matrix drive displays will greatly increase the aperture ratio of the active matr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L29/06B05D3/02
Inventor 邱勇赵云龙段炼
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com