A method for preparing a highly smooth and hard tin film with controllable wettability

A wettability and thin film technology, applied in the field of preparing high-smooth and high-hard TiN thin films with controllable wettability, can solve the problems of particle sputtering, affecting the decorative properties of thin films, weak atomic activity, etc. Good application prospect, simple and easy-to-implement effect

Active Publication Date: 2015-09-30
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the main PVD technologies used to prepare TiN thin films are magnetron sputtering and multi-arc ion plating, but the traditional magnetron sputtering technology sputters most of the metals in the atomic state, and the metal ionization rate is low (~1%). Atoms are weaker, resulting in difficult control of film composition and lower hardness during reactive sputtering
Although multi-arc ion plating has a high metal ionization rate and ion energy, there is a problem of particle splashing during the sputtering process, resulting in large particles on the surface of the film layer affecting the smoothness of the film layer, thereby affecting the decorative performance of the film
Moreover, it is difficult to control the wettability of TiN thin films by these two methods.

Method used

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  • A method for preparing a highly smooth and hard tin film with controllable wettability
  • A method for preparing a highly smooth and hard tin film with controllable wettability
  • A method for preparing a highly smooth and hard tin film with controllable wettability

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Experimental program
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Effect test

Embodiment 1

[0033] In this embodiment, the HIPIMS technology is used to deposit a TiN thin film on the surface of the substrate. The deposition process is as follows: the substrate surface is first etched, then a Ti transition layer is deposited, and finally the TiN thin film is deposited, as follows.

[0034] Put the cleaned and dried substrate into the cavity and start vacuuming, when the vacuum degree reaches 4.0×10 -3 Pa, pass argon gas into the chamber to make the air pressure in the chamber 10.0mTorr, apply pulse negative bias voltage -400V to the substrate, and use glow discharge to etch the substrate for 30min; after the etching is completed, adjust the argon gas pressure to 2.0mTorr, turn on the high-power pulsed magnetron sputtering source to deposit Ti transition layer, the high-power pulsed magnetron sputtering source is powered by DC and pulse parallel connection, DC current 3A, pulse voltage 600V, pulse frequency 100Hz, pulse width 200μs , the substrate pulse negative bias v...

Embodiment 2

[0038] In this example, HIPIMS technology is used to deposit TiN film on the surface of the substrate. The deposition process and specific deposition conditions are basically the same as those in Example 1. The difference is that when depositing the TiN film on the surface of the substrate, the pulse negative bias of the substrate is adjusted to -350V , instead of -200V in Example 1.

[0039] The surface topography and contact angle diagrams of the TiN film on the surface of the substrate prepared above are as follows: figure 2 shown. Compared figure 1 and figure 2Afterwards, it was found that when the TiN thin film was deposited, when the substrate pulse negative bias was adjusted, that is, when it was adjusted from -200V in Example 1 to -350V in Example 2, the surface topography of the TiN thin film changed, and its contact angle It also changed accordingly. Therefore, by adjusting the negative bias of the substrate pulse, the surface microstructure of the TiN film can...

Embodiment 3-6

[0042] In embodiment 3-6, adopt HIPIMS technology to deposit TiN thin film on substrate surface, its deposition process and concrete deposition condition are basically the same as embodiment 1, difference is: when substrate surface deposits TiN thin film, adjust substrate pulse negative bias to be -50V, -100, -300, -400 instead of -200V in Example 1.

[0043] similar figure 2 , the surface topography and contact angle diagrams of the TiN film on the surface of the substrate prepared above are compared with figure 1 After comparison, it is found that when the TiN film is deposited and the substrate pulse negative bias is adjusted, the surface topography of the TiN film changes, and its contact angle also changes accordingly. Therefore, by adjusting the negative bias of the substrate pulse, the surface microstructure of the TiN film can be changed, thereby preparing a TiN film with controllable wettability.

[0044] similar Figure 5 and 6 As shown, the AFM schematic diagra...

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Abstract

The invention provides a method for preparing a wettability-controllable, high-smoothness and high-hardness TiN (titanium nitride) film. The method comprises the following steps: by a high-power pulsed magnetron sputtering technology, putting a washed and dried substrate into a cavity, vaccumizing the cavity, inflating inert gas and nitrogen into the cavity, starting a high-power pulsed magnetron sputtering source, and depositing the TiN film on the surface of the substrate; and by adjusting a pulsed negative bias of the substrate, changing the surface microstructure of the TiN film so as to prepare the wettability-controllable TiN film. Experiments prove that the method is simple and feasible, the high-smoothness and high-hardness TiN film can be prepared by the method, and adjustment on the wettability of the TiN film can be achieved through simple adjustment on the pulsed negative bias of the substrate, so that the method is an ideal method for preparing the high-performance TiN film and has a good prospect.

Description

technical field [0001] The invention belongs to the technical field of film materials, and in particular relates to a method for preparing a highly smooth and high-hard TiN film with controllable wettability. Background technique [0002] Titanium nitride (TiN) thin films are widely used in the mechanical field because of their high thermal hardness, good chemical stability, excellent corrosion and oxidation resistance, good toughness, and ability to withstand certain elastic deformation pressures. Surface hardness and wear resistance of the workpiece, thereby increasing its service life. At the same time, the optical properties of the TiN thin film are peculiar. It has a high reflectance at the end of the red band in the visible range and a low reflectance near the ultraviolet region, so it presents a golden yellow color comparable to gold, and when the nitrogen content in the film changes , the color of the film changes accordingly, and it can present colors such as silve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 柯培玲王振玉张栋汪爱英谢仕芳
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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