Zinc tin oxide film and preparation method, thin film transistor and preparation method
A technology of thin film transistors and zinc tin oxide, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, metal material coating technology, etc., can solve the problem of low carrier mobility and achieve the effect of large carrier mobility
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Embodiment 1-1
[0049] Embodiment 1-1, the method for preparing zinc tin oxide thin film with spin coating method is as follows:
[0050] (1) Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of precursor materials zinc acetate (white powder), 2-ethylhexanoate stannous (yellow transparent liquid), add co-solvent Ethanolamine, dissolved in ethylene glycol monomethyl ether. Stir well, generally takes 2 hours, until completely dissolved. Standing for use, the molar ratio of zinc acetate, stannous 2-ethylhexanoate, and ethanolamine is 1:1:3. The total molar concentration of zinc acetate (white powder) and stannous 2-ethylhexanoate is 0.45mol / L.
[0051] (2) Film preparation by spin coating: Spin coating is performed in a dust-free atmosphere. The rotation speed is 2000rpm, and the rotation time is 20s. According to the thickness of the required film, the rotation speed can be adjusted between 2000rpm and 4000rpm, and the ...
Embodiment 2-1
[0071]Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of zinc precursor materials zinc nitrate, 2-ethyl stannous hexanoate (yellow transparent liquid), add co-solvent diethanolamine, dissolve in solvent Propylene Glycol Monomethyl Ether. Stir well, generally takes 2 hours, until completely dissolved. Stand still for use, the molar ratio of the precursor of zinc, stannous 2-ethylhexanoate, co-solvent, and solvent is 1:1:5, the total molar concentration of the precursor material is 0.5mol / L, and the heat treatment procedure is: heating The rate is 30°C / min, and the wet film after spin coating is directly placed on a heating table heated to 150°C, and the temperature is raised at a constant rate of 30°C / min until it reaches 400°C, and heated at a constant temperature for 45 minutes. Naturally cool to room temperature. The preparation of zinc tin oxide thin film is completed.
[0072] The heating rate of...
Embodiment 3-1
[0076] Preparation of precursor solution: According to the thickness of zinc tin oxide film to be prepared, take a certain amount of zinc precursor materials zinc chloride, 2-ethylhexanoate tin (yellow transparent liquid), add co-solvent triethanolamine, dissolve in solvent butanediol monomethyl ether. Stir well, generally takes 2 hours, until completely dissolved. Leave it to stand for use, the molar ratio of the precursor of zinc, 2-ethylhexanoate, and cosolvent is 1:1:7, the total molar concentration of the precursor material is 0.4mol / L, and the heat treatment program is: the heating rate is 30°C / min, the wet film after spin coating is directly placed on a heating table heated to 150°C, and the temperature is raised at a constant rate of 30°C / min until 500°C, and heated at a constant temperature for 50min. Naturally cool to room temperature. The preparation of zinc tin oxide thin film is completed.
[0077] The heating rate of Example 3-2 to Example 3-7 is 20, 40, 50, 6...
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