Device for epitaxial growth of silicon carbide
A technology of epitaxial growth and silicon carbide, which is applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of increasing manufacturing costs, polluting epitaxial wafers, and large environmental pollution, and achieves improved uniformity, increased growth rate, and The effect of increasing the growth rate
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[0068] Example 1:
[0069] Such as figure 1 As shown, a silicon carbide epitaxial growth device of the present invention is cylindrical and has a cross-sectional radius of 18cm. Heating coils, quartz walls, graphite soft felt, graphite support layers and the surrounding area are arranged in order from outside to inside. Rectangular parallelepiped reaction chamber. Both ends of the reaction chamber are equipped with air inlet and outlet devices. The inner wall of the graphite support layer is plated with silicon carbide. The thickness is 70um. The air supply pipes arranged side by side are parallel to the cylindrical axis and pass through the graphite soft The felt vertically passes through the L-shaped air supply pipe of the graphite support layer, and the inner wall of the air supply pipe is plated with a coating.
[0070] The thickness of the quartz wall is 4mm, and the thickness of the graphite support layer is 1.5cm.
[0071] The air supply pipes side by side covering the entir...
Example Embodiment
[0079] Example 2
[0080] Such as figure 1 As shown, a silicon carbide epitaxial growth device of the present invention has a cylindrical shape with a cross-sectional radius of 20cm, in which heating coils, quartz walls, graphite soft felt, graphite support layers and the surrounding area are arranged from the outside to the inside. A rectangular parallelepiped reaction chamber. Both ends of the reaction chamber are equipped with an air inlet device and an air outlet device. The inner wall of the graphite support layer is plated with a coating. The coating is tantalum carbide and the thickness is 80um. The felt vertically passes through the L-shaped air supply pipe of the graphite support layer, and the inner wall of the air supply pipe is plated with a coating.
[0081] The thickness of the quartz wall is 5 mm, and the thickness of the graphite support layer is 1.8 cm.
[0082] The gas supply pipes side by side covering the entire cross section of the reaction chamber are made of ...
Example Embodiment
[0090] Example 3
[0091] Such as figure 1 As shown, a silicon carbide epitaxial growth device of the present invention has a cylindrical shape with a cross-sectional radius of 25cm, in which heating coils, quartz walls, graphite soft felt, graphite support layer and the surrounding area are arranged in order from outside to inside. A rectangular parallelepiped reaction chamber. Both ends of the reaction chamber are equipped with an air inlet device and an air outlet device. The inner wall of the graphite support layer is plated with silicon carbide with a thickness of 90um. The air supply pipes arranged side by side are parallel to the cylindrical axis and pass through the graphite soft The felt vertically passes through the L-shaped air supply pipe of the graphite support layer, and the inner wall of the air supply pipe is plated with a coating.
[0092] The thickness of the quartz wall is 6mm, and the thickness of the graphite support layer is 2.0cm.
[0093] The air supply pipe...
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