A solar battery based on a selectivity tunneling principle and a preparation method thereof
A solar cell and selective technology, applied in photosensitive equipment, photovoltaic power generation, etc., can solve the problems of restricting the widespread use of solar cells and high cost, and achieve the effects of easy mass production and packaging, simplified structure, and high photoelectric conversion efficiency
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Embodiment 1
[0052] Example 1. Prototype device using single crystal titanium dioxide as wide bandgap semiconductor and Z907 dye as photoexcitation material
[0053] The structural diagram and schematic diagram of the assembled prototype device are as follows: figure 1 shown.
[0054] A layer of graphene is assembled on one side of titanium dioxide; then a layer of photoexcitation material is assembled on top of the graphene; finally, a layer of low work function metal is deposited on the back of titanium dioxide. Under light, the excited material generates hole-electron pairs, and the interface between titanium dioxide and graphene can selectively allow the photogenerated electrons to tunnel across the conduction band of titanium dioxide and finally be collected by the low work function metal. Electron reduction on graphene, thereby achieving charge separation.
[0055] The specific device preparation method is as follows:
[0056] 1. Preparation of ultra-flat titanium dioxide: single-...
Embodiment 2
[0061] Example 2, a prototype device using single crystal zinc oxide as a wide bandgap semiconductor and D-A dye-sensitive molecules as photoexcitation materials
[0062] 1. Preparation of ultra-flat zinc oxide: Mechanically polish one side of zinc oxide single crystal, etch with 5wt% HF aqueous solution for 30s, and then etch in 30W oxygen plasma for 1min.
[0063] 2. Transfer graphene to the surface of zinc oxide: use chemical vapor deposition (CVD) to prepare monoatomic layer graphene on copper foil, and then use PMMA as an auxiliary layer to transfer graphene to the surface of ultra-flat zinc oxide. First bake at 30°C for 10 minutes to dry the solvent on the surface of graphene and zinc oxide, then bake at 120°C for 6 minutes to ensure close contact between graphene and zinc oxide, and finally heat the boiling acetone solution at 200°C Soak in medium for 3min to remove the transfer auxiliary layer PMMA.
[0064] 3. Assemble a layer of D-A dye-sensitive molecules on top of...
Embodiment 3
[0067] Embodiment 3, Titanium dioxide is a prototype device based on a semiconductor layer and a high polymer photoexcitation material
[0068] 1. Preparation of electron collection layer and titanium dioxide semiconductor layer: use a polished titanium sheet as the electron collection layer in ohmic contact on the back, and then vapor-deposit 500nm of titanium on the polished titanium sheet at a speed of 0.01nm / s by magnetron sputtering, and then Titanium was oxidized to titanium dioxide by annealing in an oxygen atmosphere at 700°C for 3 hours, and finally chemical polishing was performed, etched in 30wt% HF aqueous solution for 5 minutes, and etched in 30W oxygen plasma for 1 minute.
[0069] 2. Transfer graphene to the surface of titanium dioxide: use chemical vapor deposition (CVD) to grow monoatomic layer graphene on copper foil, use PMMA as an auxiliary layer to transfer graphene to the surface of titanium dioxide, and then heat it at 50°C Bake for 5 minutes to dry the ...
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