Perovskite structural solar battery and preparation method thereof
A perovskite structure, solar cell technology, applied in the field of solar cells, can solve the problems of electrolyte leakage and low efficiency of DSC
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Embodiment 1
[0024] 1. Select FTO glass with a sheet resistance of 10Ω and a transmittance of 80% as the substrate material.
[0025] 2. Using ALD technology to grow a 10 nm thick ZnO layer
[0026] Deposition conditions: reaction temperature 200°C, Zn(CH 2 CH 3 ) 2 (DEZ) for 1 s, nitrogen purge for 1.5 s, water for 500 ms, nitrogen purge for 1 s, repeat the above process 100 times.
[0027] 3. CH 3 NH 3 PB 3 Preparation of perovskite layer
[0028] (1) CH 3 NH 3 I Isopropanol solution preparation
[0029] Place a round-bottomed flask containing 20ml of methylamine in ice water at 0°C, add 22ml of hydroiodic acid while stirring into the flask, and continue stirring in an ice-water bath for 2 hours after the addition is complete, forming a colorless and transparent CH 3 NH 3 I solution; the solution was dried with a rotary evaporator, and then washed with ether to obtain white CH 3 NH 3 I crystals, will quantify the CH 3 NH 3 I crystals were dissolved in isopropanol with a s...
Embodiment 2
[0043] 1. Select FTO glass with a sheet resistance of 15Ω and a transmittance of 83% as the substrate material.
[0044] 2. Using ALD technology to grow 10 nm thick TiO 2 Floor
[0045] Water and titanium tetraisopropoxide are used as sources to grow a dense TiO2 layer with a thickness of 10nm on the substrate; the growth process is: the heating temperature of the titanium source is 70°C, and the reaction temperature of the chamber is 270°C. Pass titanium source for 1s, nitrogen purge for 5s, pass water vapor for 200ms, and nitrogen purge for 2s to complete one cycle, a total of 160 cycles are required.
[0046] 3. Preparation of CH by co-evaporation 3 NH 3 PB 3 perovskite layer
[0047] 10mg CH 3 NH 3 I crystal and 10 mgPbI powder were put into two tungsten boats respectively, and the two tungsten boats were heated at the same time, and the background vacuum was 1 10 -4 Pa, the heating electrode current is 25A, in TiO 2 500 nm thick CH was deposited on the layer 3...
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