High depth width ratio TSV through hole step-by-step etching and side wall modification method
A modification method and aspect ratio technology, applied in the field of microelectronics, can solve the problems of CMOS process line pollution, difficulty in removing the oxide layer, and breakage of the insulating layer seed layer, so as to reduce the difficulty of the process, solve the problem of large top leakage, increase reliability effect
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[0039] Example 1:
[0040] This embodiment is used for the production of TSV through holes with a diameter of 10 μm and an aspect ratio of 10:1. The hole etching material is P type silicon, and the mask is 1μm thick SiO 2 . The model of the ICP etching machine is Alcatel AMS-100, and the specific steps according to the present invention are as follows (see image 3 ):
[0041] 1. First, deposit a layer of 1μm SiO on the surface of P type single crystal silicon wafer by PE CVD method 2 , and in SiO 2 The surface is coated with photoresist, exposed and developed to expose the silicon dioxide window that needs to be etched (the window pattern is a circular hole, and the hole diameter is 10 μm).
[0042] 2. Then, the silicon dioxide layer is etched at the exposed window by the plasma dry etching method, and the etching has been carried out to the surface of the single crystal silicon wafer.
[0043] 3. Then carry out the optimized multi-step Bosch etching process proposed by...
Example Embodiment
[0048] Example 2:
[0049] This embodiment is used for making TSV through holes with a diameter of 5 μm and an aspect ratio of 10:1. The hole etching material is P type silicon, and the mask is 1.5μm thick SiO 2 . The model of the ICP etching machine is Alcatel AMS-100, and the specific steps according to the present invention are as follows (see image 3 ):
[0050] 1. First, deposit a layer of 1.5μm SiO on the surface of P type single crystal silicon wafer by PE CVD method 2 , and in SiO 2 The surface is coated with photoresist, exposed and developed to reveal the silicon dioxide window that needs to be etched (the window pattern is a circular hole, the hole diameter is 5 μm).
[0051] 2. Then, the silicon dioxide layer is etched at the exposed window by the plasma dry etching method, and the etching has been carried out to the surface of the single crystal silicon wafer.
[0052] 3. Then carry out the optimized multi-step Bosch etching process proposed by the present ...
Example Embodiment
[0057] Example 3:
[0058] This embodiment is used for the production of TSV through holes with a diameter of 30 μm and an aspect ratio of 10:1. The hole etching material is P type silicon, and the mask is 1.5μm thick SiO 2 . The ICP etching machine model is Alcatel AMS-100, and the specific steps of the present invention are implemented as follows:
[0059] 1. First, deposit a layer of 1.5μm SiO on the surface of P type single crystal silicon wafer by PE CVD method 2 , and in SiO 2The surface is coated with photoresist, exposed and developed to reveal the silicon dioxide window that needs to be etched (the window pattern is a circular hole, and the hole diameter is 30 μm).
[0060] 2. Then, the silicon dioxide layer is etched at the exposed window by the plasma dry etching method, and the etching has been carried out to the surface of the single crystal silicon wafer.
[0061] 3. Then carry out the optimized multi-step Bosch etching process proposed by the present invent...
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