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A nano-silicon/silicon nitride film-type electron source and its manufacturing method

A technology of silicon nitride thin film and manufacturing method, which is applied in the manufacture of electrode systems, manufacture of discharge tubes/lamps, circuits, etc., can solve the problem of poor electron emission stability, unstable mechanical and chemical properties of porous silicon electron sources, and unfavorable Preparation of devices for long-term use, etc., to achieve good physical and chemical stability, high melting point and high density, good electron emission ability, and good repeatability

Inactive Publication Date: 2017-01-18
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] (1) The electron emission stability of the porous silicon electron source is poor, and the mechanical and chemical properties are unstable, which is not conducive to the preparation of long-term use devices
[0005] (2) The electrochemical anode etching technology uses hydrofluoric acid as the corrosion solution, which will produce toxic waste water and seriously pollute the environment, so it has great limitations

Method used

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  • A nano-silicon/silicon nitride film-type electron source and its manufacturing method
  • A nano-silicon/silicon nitride film-type electron source and its manufacturing method
  • A nano-silicon/silicon nitride film-type electron source and its manufacturing method

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preparation example Construction

[0036] like figure 1 The preparation method of the first shown nano-silicon / silicon nitride film electron source comprises the following steps:

[0037] 1) Depositing the bottom electrode 1 on the substrate 4 by sputtering a target material of one material among tungsten, nickel, chromium, aluminum, copper, titanium or a composite target material composed of several of them, and its thickness is 40-200nm;

[0038] 2) Depositing a nano-silicon / silicon nitride layer 2 with a thickness of 100-2000nm on the bottom electrode 1, the method is:

[0039] Deposit a silicon-rich silicon nitride film on the bottom electrode 1, in which silicon exists in an amorphous form, and then in nitrogen or a mixed gas composed of nitrogen and hydrogen with a volume ratio of (50:1)-(10:1) Perform high-temperature annealing on the silicon-rich silicon nitride film at 500-1100°C, and the high-temperature annealing time is 30-120 minutes, so that the silicon-rich silicon nitride film (SiN x , x<4 / 3) ...

Embodiment 1

[0062] see figure 1 , the manufacturing process of the nano-silicon / silicon nitride thin film electron source includes the following steps:

[0063] 1) Depositing the bottom electrode 1 on the substrate 4 by using a sputtering tungsten target with a thickness of 200 nm;

[0064] 2) Introduce argon and nitrogen into the coating chamber, control the partial pressure ratio of argon and nitrogen to 3:1, and make the total pressure in the coating chamber 0.1Pa, the temperature of the substrate 4 is controlled at 550°C, and the silicon target Deposit a silicon-rich silicon nitride film with a thickness of 500nm on the bottom electrode 1 as the sputtering source; then, anneal at 900°C for 120 minutes in a mixture of nitrogen and hydrogen with a volume ratio of 25:1 to transform the amorphous silicon into Nanocrystalline silicon 22 to form a silicon nitride 21 film inlaid with nanocrystalline silicon 22, this film is nano-silicon / silicon nitride layer 2, the particle size of silicon ...

Embodiment 2

[0067] see figure 1 , the manufacturing process of the nano-silicon / silicon nitride thin film electron source includes the following steps:

[0068] 1) Depositing the bottom electrode 1 on the substrate 4 by using a sputtering nickel target, the thickness of which is 100 nm;

[0069] 2) Introduce argon gas into the coating chamber, control the air pressure in the coating chamber to 0.3Pa, control the temperature of the substrate 4 at 500°C, and deposit a thickness of 200nm silicon-rich silicon nitride film; then, anneal for 90 minutes at 1000°C in a mixture of nitrogen and hydrogen with a volume ratio of 30:1 to convert amorphous silicon into nanocrystalline silicon 22 to form nanocrystalline silicon embedded 22 silicon nitride 21 film, this film is nano-silicon / silicon nitride layer 2, the particle size of silicon grain 22 is 3-6nm, and the adjacent nano-crystals in the silicon nitride 21 film inlaid with nano-crystal silicon 22 The silicon nitride 21 between the silicon 22...

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Abstract

The invention relates to a nano-silicon / silicon-nitride film type electron source and a manufacturing method thereof. The electron source is composed of a bottom electrode, a nano-silicon / silicon nitride layer, and a top electrode, wherein the bottom electrode, the nano-silicon / silicon nitride layer, and the top electrode are successively deposited on a substrate. The nano-silicon / silicon nitride layer uses a silicon nitride film embedded with nanometer silicon or a multi-layer film formed by nano-silicon layers and silicon nitride layers in an alternate mode. During the preparation process of the nano-silicon / silicon nitride layer, an intrinsic standoff ratio of argon flowing into a film plating cavity to nitrogen flowing into a film plating cavity is adjusted or sputtering powers of a silicon target and a silicon nitride target are adjusted to control the sizes and density of silicon grains of the manufactured nano-silicon / silicon nitride layer, so that the grain size of the silicon grain can reach 3 to 6 nm. The manufacturing process of the nano-silicon / silicon-nitride film type electron source is compatible with the processing technology of the silicon-based microelectronics; and the electron emission property is stable.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic materials and devices, in particular to a nano-silicon / silicon nitride thin-film electron source which can be used in electron beam devices, light-emitting devices, flat panel display devices, microwave devices and sensor devices and a manufacturing method thereof. Background technique [0002] There are many types of field emission electron sources, including Spindt type, silicon microtip type, carbon nanotube type, diamond film type, diamond-like film type, porous silicon type and surface conduction electron emission type, metal-insulator (oxide)- - metal type and metal - insulator (oxide) - semiconductor - metal type, etc. In order to obtain good field electron emission, the basic requirements that electron source materials should meet are: low work function, low field emission turn-on voltage; large and uniform field emission current density; high conductivity and melting point; stable ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J1/304H01J9/02
CPCH01J1/304H01J9/02
Inventor 胡文波樊金龙赵晓磊吴胜利张劲涛
Owner XI AN JIAOTONG UNIV
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