Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure

A chip structure, LED epitaxial wafer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as absorption loss, and achieve the effects of low cost, high reliability, and simplified process flow

Inactive Publication Date: 2015-05-20
江苏巨晶新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this solution still has some shortcomings, that is, the n-type conductive SiC substrate has a certain degree of absorption loss for the blue and violet light emitted by the LED device.

Method used

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  • Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure
  • Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure
  • Vertical chip structure for nitride LED (light-emitting diode) and preparation method of vertical chip structure

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Experimental program
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preparation example Construction

[0097] A method for preparing a nitride LED vertical chip structure, comprising the following steps:

[0098] 1) Fabricate a metal functional film on a conductive substrate to form a composite substrate;

[0099] The preparation method of the metal functional thin film includes at least one of electroplating, chemical plating, ion plating, thermal evaporation, electron beam evaporation and magnetron sputtering;

[0100] Then prepare more than one layer of two-dimensional derived film layers on the composite substrate, that is, prepare more than one layer of graphene or silicene;

[0101] The preparation of the graphene or silicene is grown on the composite substrate by chemical vapor deposition or physical vapor deposition;

[0102] The specific steps for preparing graphene are as follows: the composite substrate is placed in a chemical vapor deposition system, and at a temperature of 400-1050°C, argon and hydrocarbons are introduced simultaneously, and the composite substrat...

Embodiment 1

[0120] Such as image 3 As shown, this embodiment shows a schematic structural diagram of a nitride LED vertical chip. in,

[0121] The structure of the nitride LED epitaxial wafer using the composite substrate is as follows from bottom to top: a 2-inch iron-chromium alloy (Fe: 80wt%, Cr: 20wt%) substrate with a thickness of 150 μm constitutes a metal conductive substrate 110; 20nm thick The Ag reflective layer 122 and the 50nm thick Ni catalytic support layer 123 together form a functional metal thin film layer; the multilayer graphene 201 forms a two-dimensional derived film; the buffer layer 301 is composed of 200nm n-type Al 0.1 Ga 0.9 N-layer composition; the structural parameters of the n-type electron injection layer 302 are as follows: a 2 μm thick n-type GaN layer, the doping element is Si, and the doping concentration is 1.0×10 19 ; The structural parameters of the active layer 303 are as follows: In 0.15 Ga 0.85 N / GaN multiple quantum well light-emitting layer,...

Embodiment 2

[0131] Such as Figure 4 As shown, this embodiment shows a schematic structural diagram of a nitride LED vertical chip. in,

[0132] The structure of the nitride LED epitaxial wafer using a composite substrate is as follows from bottom to top: a 4-inch size 430 μm thick n-type conductive 6H-SiC substrate constitutes a semiconductor conductive substrate 110; a metal thin film structure Au (200nm) / NiCr (100nm); Wherein, NiCr represents the alloy of Ni and Cr, Ni: 80wt%, Cr: 20wt%) form ohmic contact layer 121; Thickness is that the Ag film of 15nm is reflection layer 122; Thickness is that 40nm Ni film is catalytic supporting layer 123; the ohmic contact layer 121, the reflective layer 122 and the catalytic support layer together form a functional metal thin film layer; the multilayer graphene 201 forms a two-dimensional derived film; the buffer layer 301 is composed of 200nm n-type Al 0.15 Ga 0.85 N-layer composition; the structural parameters of the n-type electron injectio...

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Abstract

The invention relates to a vertical chip structure for a nitride LED (light-emitting diode) and a preparation method of the vertical chip structure. The vertical chip structure for the nitride LED comprises an n-type electrode, a nitride LED epitaxial wafer structure and a p-type electrode, wherein the n-type electrode is located below the nitride LED epitaxial wafer structure and is attached to the nitride LED epitaxial wafer structure; the p-type electrode is located above the nitride LED epitaxial wafer structure and is attached to the nitride LED epitaxial wafer structure. The method comprises the following steps: after fabricating a two-dimensional derived membrane and a nitride epitaxial layer on a composite substrate, firstly, fabricating the n-type electrode on the back surface of the composite substrate; then fabricating the p-type electrode on the nitride epitaxial layer; finally, segmenting an LED apparatus wafer to obtain a discrete device. A vertical chip for the nitride LED, prepared by the method, has the advantage of being suitable for high-current density (greater than or equal to 100A / cm<2>) drive and high-optical power density output.

Description

technical field [0001] The invention relates to a nitride LED vertical chip structure and a preparation method thereof, belonging to the technical field of manufacturing LED optoelectronic devices. Background technique [0002] Al nitride x In y Ga 1-x-y N (0≤x, y≤1; x+y≤1; wurtzite crystal structure) light-emitting diode LEDs made of semiconductor materials are gradually being used in electronic display screens, landscape lighting, miner's lamps, Widely used in street lamps, liquid crystal display backlight, general lighting, optical disk information storage, biomedicine and other fields. The above-mentioned compound semiconductors can cover the entire spectral energy range from infrared, visible to ultraviolet light, and the emission wavelength of LED devices can be accurately customized by controlling the cationic composition of the nitride alloy. From the perspective of the scope of application fields and market capacity, the application of nitride LEDs is the bulk a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/203H01L21/205H01L33/32
Inventor 马亮胡兵李金权裴晓将刘素娟
Owner 江苏巨晶新材料科技有限公司
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