A photodetector based on twisted bilayer graphene and its preparation method

A double-layer graphene, photodetector technology, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve the effects of high mobility, high photodetection efficiency, and low dark current

Active Publication Date: 2016-08-17
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, in many spectrometers and sensors, the detection materials for infrared wavelengths are mercury cadmium telluride (MCT) and III-V quantum wells (QWIPS), but these two materials work in a low temperature environment and require additional cooling devices

Method used

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  • A photodetector based on twisted bilayer graphene and its preparation method
  • A photodetector based on twisted bilayer graphene and its preparation method
  • A photodetector based on twisted bilayer graphene and its preparation method

Examples

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Effect test

Embodiment 1

[0071] Example 1: Preparation of a twisted bilayer graphene-based photodetector enhanced by 532nm laser resonance

[0072] 1. Preparation of twisted bilayer graphene:

[0073] 1) Copper foil (copper foil with a purity of more than 99% and a thickness of 20-100 μm) is annealed at a high temperature of 1020-1040 °C in a hydrogen atmosphere. The annealing conditions are: the flow rate of hydrogen is 400-800 sccm, and the pressure is 1000-2000 Pa. Each annealing time is 20-60min to reduce the residual oxide on the surface of the copper foil to expand the size of the copper domain.

[0074] 2) Quickly transfer the copper foil from a high temperature zone of 1020-1040°C to a zone of 25°C to quickly lower the temperature of the copper foil; temperature, so cycled 3 times.

[0075] 3) At a high temperature of 1020-1040°C, feed methane gas (carbon source, purity not less than 99.999%) for 30 minutes, the flow rate of methane is 1 sccm, and the flow rate of hydrogen gas is 500 sccm, a...

Embodiment 2

[0093] Embodiment 2, preparation of a photodetector based on twisted bilayer graphene enhanced by 633nm laser resonance

[0094] 1. The preparation of twisted bilayer graphene is the same as that of (1) in Example 1.

[0095] 2. Fabrication of photodetectors based on twisted bilayer graphene:

[0096] 1) Select the twisted bilayer graphene prepared in (1) for screening, and select the sample with a twist angle of 13°. Coating polymethyl methacrylate (PMMA) on the sample with a coating thickness of 300nm, using electron beam exposure (the electron beam exposure process is 950K PMMA 3000r / min spin coating 50s, 170 ° C baking 3min) on the twisted double layer Make a 5-500 μm channel on the graphene, clean the channel with oxygen plasma, the power of the oxygen plasma is 90W, the oxygen flow rate is 15sccm, and the time is 3min, and then use 25% of the mass fraction of tetramethyldipentyl A ketone (isopropanol as a solvent) developer was developed for 2 min, and an isopropanol f...

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Abstract

The invention discloses a photoelectric detector based on torsional double-layer graphene as well as a preparation method of the photoelectric detector. The preparation method of the photoelectric detector comprises steps as follows: 1) coating the torsional double-layer graphene with a light-sensitive material, then performing etching on the torsional double-layer graphene, and performing development and fixing to produce an electrode pattern; 2) performing metal evaporation on the electrode pattern of the torsional double-layer graphene treated in Step 1) to obtain an electrode, that is, the photoelectric detector. The torsional-angle double-layer graphene with the special angle is prepared, the prepared photoelectric detector has the very high migration rate and has high photoelectric detection efficiency for light with special wavelengths, the photoelectric response is enhanced on average, and the photoelectric detector has the advantages that the dark current is very low and bias voltage and grid voltage are not required to provide extra energy.

Description

technical field [0001] The invention relates to a photodetector based on twisted double-layer graphene and a preparation method thereof, belonging to the field of photoelectric detection. Background technique [0002] Twisted bilayer graphene is non-AB stacked bilayer graphene with interlayer twist angles. Compared with single-layer graphene and AB-stacked bilayer graphene, twisted bilayer graphene has a novel and unique electronic band structure. In the E-k relationship, the Dirac cone structure of the single-layer graphene is retained, but the Dirac cones of the upper and lower graphene layers are coupled to each other, so that a saddle point appears near the Fermi level and a Van Hove singularity is formed on the density of states . [0003] A photodetector is a device that converts an optical signal into an electrical signal. Generally, they are based on photoconductive or photovoltaic conversion mechanisms. Compared with traditional semiconductor optoelectronics, th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/0392
CPCY02P70/50
Inventor 刘忠范尹建波王欢彭海琳
Owner PEKING UNIV
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