Method for electrochemical codeposition of CZTS (Se) films in deep eutectic solution
A deep eutectic and electrochemical technology, applied in the field of solar cells, can solve the problems of lower conversion efficiency and disordered crystal structure, and achieve the effects of low vapor pressure, low dissolution temperature and good conductivity
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[0045] Example 1
[0046] (1) Preparation of deep eutectic solution
[0047] Mix choline chloride and urea uniformly, heat to 90°C, stir for 6 hours, and cool to room temperature to obtain a deep eutectic solution; the molar ratio of choline chloride to solvent is 1:2;
[0048] (2) Preparation of plating solution
[0049] Add copper chloride, zinc chloride, tin chloride and thioacetamide to the deep eutectic solution prepared in step (1), stir evenly with magnetic force, heat to 80°C, continue to stir for 2 hours, to obtain a uniformly dispersed plating solution ; The concentration of copper chloride in the plating solution is 8mmol / L, the concentration of zinc chloride is 12mmol / L, the concentration of tin chloride is 12mmol / L, and the concentration of thioacetamide is 32mmol / L;
[0050] (3) Preparation of CZTS film prefabricated layer
[0051] The soda lime glass substrate material with 1μm thick Mo electrode was ultrasonically cleaned 3 times in 10% NaOH solution and absolute ethanol...
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[0060] Example 2
[0061] (1) Preparation of deep eutectic solution
[0062] Mix choline chloride and ethylene glycol uniformly, then add an appropriate amount of deionized water, heat to 90°C, stir for 6 hours, and cool to room temperature to obtain a deep eutectic solution; the molar ratio of choline chloride to solvent 1:2.5, the volume ratio of the solvent to deionized water is 7:2;
[0063] (2) Preparation of plating solution
[0064] Add copper sulfate, zinc sulfate, tin sulfate and selenic acid to the deep eutectic solution prepared in step (2), magnetically stir uniformly, heat to 70°C, and continue stirring for 2 hours to obtain a uniformly dispersed plating solution; the plating solution The concentration of copper sulfate is 10mmol / L, the concentration of zinc sulfate is 15mmol / L, the concentration of tin sulfate is 15mmol / L, and the concentration of selenic acid is 40mmol / L;
[0065] (3) Preparation of CZTSe film prefabricated layer
[0066] The Mo metal foil substrate with...
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[0075] Example 3
[0076] (1) Preparation of deep eutectic solution
[0077] Mix choline chloride and oxalic acid uniformly, then add an appropriate amount of deionized water, heat to 50°C, stir for 4 hours, and cool to room temperature to obtain a deep eutectic solution; the molar ratio of choline chloride to solvent is 1 :1, the volume ratio of the solvent to deionized water is 7:3;
[0078] (2) Preparation of plating solution
[0079] Add copper nitrate, zinc nitrate, tin nitrate and selenium chloride to the deep eutectic solution prepared in step (1), magnetically stir uniformly, heat to 60°C, and continue to stir for 3 hours to obtain a uniformly dispersed plating solution; The concentration of copper nitrate in the solution is 20mmol / L, the concentration of zinc nitrate is 25mmol / L, the concentration of tin nitrate is 30mmol / L, and the concentration of selenium chloride is 60mmol / L;
[0080] (3) Preparation of CZTSe film prefabricated layer
[0081] The Ti metal foil substrate ma...
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