Light-emitting diode structure with indium-containing conductive layer and preparation method therefor
A technology of light-emitting diodes and conductive layers, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of poor InGaN quantum well crystal quality, large lattice mismatch, low internal quantum efficiency, etc., to improve spontaneous radiation recombination. rate, improve crystal quality, improve the effect of crystal quality
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[0041] Example 1 , A light-emitting diode epitaxial structure with n-type and p-type InGaN conductive layers
[0042] Such as figure 1 As shown, the light-emitting diodes from bottom to top are sapphire substrate 1, GaN nucleation layer 2, unintentionally doped GaN layer 3, N-type GaN conductive layer 4, In composition graded InGaN layer 5, N-type InGaN Conductive layer 6, multiple quantum well active region 9 and P-type InGaN conductive layer 10.
[0043] The epitaxial growth steps are as follows:
[0044] (1) The sapphire substrate is put into a metal organic chemical vapor chemical deposition equipment, hydrogen is introduced, the temperature of the reaction chamber is increased to 1300 degrees Celsius, and the substrate sheet is cleaned at high temperature.
[0045] (2) The temperature is lowered to 550 degrees Celsius, ammonia gas, hydrogen gas and trimethylgallium are introduced into the reaction chamber, and a 30 nm GaN nucleation layer is grown on the substrate described in s...
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[0056] Example 2 , A light-emitting diode epitaxial structure with n-type and p-type InGaN conductive layers
[0057] Such as figure 2 As shown, the light-emitting diodes are sapphire substrate 1, GaN nucleation layer 2, N-type InGaN conductive layer 6, multiple quantum well active region 9 and P-type InGaN conductive layer 10 from bottom to top. The preparation method is as implemented As mentioned in Example 1, the difference is:
[0058] After the growth on the nucleation layer described in step (2) is completed, proceed directly to step (6). The reaction chamber is filled with silane, ammonia, hydrogen trimethylgallium and trimethylindium, and the temperature is maintained at 800 degrees Celsius. ) On the sample, grow an N-type doped InGaN conductive layer with a thickness of 2.5 um and a doping concentration of 8×10 18 cm -3 .
[0059] by image 3 It can be seen that the figure includes the P-type InGaN conductive layer 10; the conduction band 11 of the traditional LED; the ...
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