Magnetic-phase-oriented barium titanate/Ni-Zn ferrite nanocrystalline complex-phase thin film and preparation method thereof

A technology of nickel-zinc ferrite and barium titanate is applied in the field of composite film and its preparation, barium titanate/nickel-zinc ferrite nanocrystalline composite film material and preparation field, and can solve the complex preparation method, magnetoelectric The problems of weak coupling and high dielectric loss can achieve the effect of simple preparation process, high electromagnetic coupling effect and high magnetic loss performance.

Active Publication Date: 2015-12-30
ZHEJIANG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to propose a barium titanate grown in ferromagnetic phase orientation in view of the deficiencies in the existing related multi-ferroic complex phase films, such as high dielectric loss, low magnetic permeability, weak magnetoelectric coupling and complicated preparation methods. / Nickel zinc ferrite nanocrystalline composite film material and preparation method, in the composite film, the barium titanate crystal phase grows randomly, the nickel zinc ferrite crystal phase grows in orientation and the two phases are disorderly distributed, and the material has double (electrical, magnetic) percolation threshold, low dielectric loss, high dielectric constant and high magnetic permeability, high stress transfer effect and coupling effect between two phases, simple and easy preparation process

Method used

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  • Magnetic-phase-oriented barium titanate/Ni-Zn ferrite nanocrystalline complex-phase thin film and preparation method thereof
  • Magnetic-phase-oriented barium titanate/Ni-Zn ferrite nanocrystalline complex-phase thin film and preparation method thereof
  • Magnetic-phase-oriented barium titanate/Ni-Zn ferrite nanocrystalline complex-phase thin film and preparation method thereof

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Effect test

Embodiment 1

[0034] 1) After the (111) oriented monocrystalline silicon is preliminarily cleaned with deionized water, soak it in hydrofluoric acid for 5 minutes, and then place it in ethanol for ultrasonic cleaning for 10 minutes; place the cleaned monocrystalline silicon wafer in vacuum drying Dry in an oven to obtain a sputtered substrate.

[0035] 2) Put the complex phase sputtering target made of barium titanate and iron zinc ferrite at a molar ratio of 0.6:0.4 and the cleaned (111) single crystal silicon sputtering substrate in the radio frequency magnetron sputtering apparatus In the sputtering chamber; vacuumize the sputtering chamber and then pass a mixed gas of oxygen and argon with an oxygen partial pressure of 0.4 as the sputtering atmosphere; control the total pressure of the mixed gas at 8×10 -4 After mbar, the RF power was adjusted to 200W, and a uniform and dense amorphous film was obtained by sputtering deposition at room temperature for 4h.

[0036] 3) Place the uniform ...

Embodiment 2

[0039] 1) After the (111) oriented monocrystalline silicon is preliminarily cleaned with deionized water, soak in hydrofluoric acid for 4 minutes, and then placed in ethanol for ultrasonic cleaning for 15 minutes; place the cleaned monocrystalline silicon wafer in vacuum drying Dry in an oven to obtain a sputtered substrate.

[0040] 2) Put the complex phase sputtering target made of barium titanate and iron zinc ferrite at a molar ratio of 0.4:0.6 and the cleaned (111) single crystal silicon sputtering substrate in the radio frequency magnetron sputtering apparatus In the sputtering chamber; vacuumize the sputtering chamber and then pass a mixed gas of oxygen and argon with an oxygen partial pressure of 0.5 as the sputtering atmosphere; control the total pressure of the mixed gas at 2×10 -3 After mbar, the RF power was adjusted to 220W, and a uniform and dense amorphous film was obtained by sputtering deposition at room temperature for 2h.

[0041] 3) The uniform and dense a...

Embodiment 3

[0044] 1) After the (111) oriented single crystal silicon was preliminarily cleaned with deionized water, soaked in hydrofluoric acid for 6 minutes, and then placed in ethanol for ultrasonic cleaning for 10 minutes; the cleaned single crystal silicon wafer was placed in vacuum drying Dry in an oven to obtain a sputtered substrate.

[0045] 2) The complex phase sputtering target obtained by barium titanate iron zinc ferrite with a molar ratio of 0.1:0.9 and the cleaned (111) single crystal silicon sputtering substrate are placed in a radio frequency magnetron sputtering apparatus for sputtering chamber; after vacuuming the sputtering chamber, a mixture of oxygen and argon with an oxygen partial pressure of 0.3 is used as the sputtering atmosphere; the total pressure of the mixture is controlled at 0.6×10 -3 After mbar, the RF power was adjusted to 160W, and a uniform and dense amorphous film was obtained by sputtering deposition at room temperature for 6h.

[0046] 3) The unif...

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Abstract

The invention discloses a ferromagnetic-phase-oriented growth barium titanate/Ni-Zn ferrite nanocrystalline complex-phase thin film material and a preparation method thereof. A barium titanate crystal phase in a complex-phase thin film grows randomly, crystalline-phase-oriented growth is carried out on a Ni-Zn ferrite, and two-phase disorder distribution is achieved. The thin film is prepared through the method combining radio frequency magnetron sputtering with heat treatment. The material has electric and magnetic double percolation thresholds, has low dielectric loss, high dielectric constant and high magnetic conductivity, and has a good phase-to-phase stress transfer effect and a coupling effect. The multiferroic complex-phase thin film material is simple in preparation technology, low in cost and capable of being used in multi-state memories and heterogeneous read-write capacitors, and can be widely used in the field of electromagnetic devices.

Description

technical field [0001] The present invention relates to a composite phase film and its preparation method, in particular to a barium titanate / nickel-zinc ferrite nanocrystalline composite phase film material and its preparation method, which only grow in ferromagnetic phase orientation, and belong to the technical field of multiferroic film materials . Background technique [0002] In modern society, with the penetration of digitization and informatization in all fields of people's work and life, the development and innovation of electromagnetic devices has become one of the most urgently needed high-tech. However, traditional single-function large-size electromagnetic materials can no longer meet people's requirements for the portability and multifunctionality of electromagnetic devices. In addition, with the rapid development of social economy and the improvement of technical level, it is difficult for traditional single materials to meet the increasingly higher requireme...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468C04B35/26
Inventor 杜丕一唐宇马宁韩高荣翁文剑
Owner ZHEJIANG UNIV
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