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A method for preparing vanadium-doped semi-insulating silicon carbide by microwave irradiation

A technology of microwave irradiation and semi-insulation, which is applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve problems such as high temperature activation, non-isolation effect, and device performance degradation, and achieve simple preparation process, ideal structure, product pure effect

Active Publication Date: 2017-09-29
ZHANGJIAGANG DONGDA IND TECH RES INST +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the annealing temperature is too high or the annealing time is too long, it will still affect the redistribution of implanted impurity concentration
If the implanted vanadium ion impurity diffuses to the surface or deep of SiC after annealing, it will lead to a decrease in the concentration of vanadium in the thin layer region under the surface, and it will not be able to effectively isolate by forming a high-resistance layer, which will also lead to Increased leakage current and degraded device performance
Therefore, for SiC, there are many problems in the ion implantation technology itself, and other issues such as the high temperature activation of implanted vanadium ions, how to choose the implantation source, how to determine the implantation energy and dose, etc. are also unavoidable problems.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Weigh 24g of artificial graphite powder, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon as 1:1, and weigh 60g of amorphous SiO 2 powder, 28g Si powder; determine the molar amount of vanadium element in the vanadium dopant according to the molar ratio of vanadium element to carbon element of 0.05:1, and weigh 5.1g of elemental vanadium metal powder. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a water ring pump to evacuate to 10kPa, and irradiate for 1h at a microwave power of 3.5kW.

[0037] The concentration of doped vanadium was analyzed by secondary ion mass spectrometry, and the maximum concentration of vanadium was found to be 2.61×10 16 cm -3 . The resistivity test of the vanadium-doped silicon carbide product was performed using an Agilent semiconductor tester, and the result was 6.32 × 10 6 Ω·cm. ...

Embodiment 2

[0039] Weigh 18g of chopped carbon fiber, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon as 0.75:1, and weigh 30g of amorphous SiO 2 powder, 17.5Si powder; determine the molar amount of vanadium element in the vanadium dopant according to the molar ratio of vanadium element to carbon element of 0.2:1, and weigh 18.9 g of black vanadium carbide powder. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a mechanical pump to evacuate to 30kPa, and irradiate for 3h at a microwave power of 5.5kW.

[0040] The concentration of doped vanadium was analyzed by secondary ion mass spectrometry, and the maximum concentration of vanadium was found to be 7.29×10 16 cm -3 . The resistivity test of the vanadium-doped silicon carbide product was performed using an Agilent semiconductor tester, and the result was 8.36 × 10 8 Ω·cm. The...

Embodiment 3

[0042] Weigh 30g of pitch-based activated carbon powder, determine the molar amount of silicon in the silicon source according to the molar ratio of silicon to carbon of 1.25:1, and weigh 75g of amorphous SiO 2 powder, 52.5g Si powder; determine the molar amount of vanadium element in the vanadium dopant according to the molar ratio of vanadium element to carbon element of 0.05:1, and weigh 6.4g of elemental metal vanadium powder. After the above materials are fully mixed in a high-purity corundum crucible, they are placed in the center of the microwave resonant cavity. Use a mechanical pump to evacuate to 20kPa, and irradiate for 2h at a microwave power of 7.5kW.

[0043] The concentration of doped vanadium was analyzed by secondary ion mass spectrometry, and the maximum concentration of vanadium was found to be 4.87×10 17 cm -3 . The resistivity test of the vanadium-doped silicon carbide product was performed using an Agilent semiconductor tester, and the result was 3.3 ×...

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Abstract

The invention discloses a method for preparation of vanadium doped semi-insulating silicon carbide by microwave irradiation. The method is characterized in that: elemental vanadium metal powder or solid vanadium-containing compound is adopted as the dopant, artificial graphite powder, activated carbon, carbon fiber or natural flake graphite powder is taken as the carbon source, the mixed powder of silicon powder and silicon oxide powder is employed as the silicon source, and under the condition of a vacuum environment, heat preservation is carried out in a microwave irradiated electromagnetic field, thus obtaining the vanadium doped semi-insulating silicon carbide. Compared with the way of performing doping after acquiring a stable crystal structure, the method has no need of rigorous injection condition, and also ensures successful doping of vanadium. And the self-assembly in-situ reaction process and the energy minimized lattice adjustment process also achieve smooth acquisition of the ideal structure vanadium doped semi-insulating silicon carbide, and successfully avoids the influence that aftertreatment has to be carried out through high temperature annealing process.

Description

technical field [0001] The invention relates to a method for preparing vanadium-doped semi-insulating silicon carbide, in particular to a method for preparing vanadium-doped semi-insulating silicon carbide by microwave irradiation. Background technique [0002] Silicon carbide (SiC) has excellent properties such as high strength, high Young's modulus, high thermal conductivity, and corrosion resistance and oxidation resistance, and has important applications in aerospace and other fields. In addition, SiC also has high forbidden band width / critical breakdown electric field, small dielectric constant and high electron saturation mobility, as well as strong radiation resistance, good mechanical properties, high breakdown field strength, high thermal conductivity, High saturation electron drift speed, high bonding energy and other characteristics can be widely used in transistors, sensors, etc. Its excellent performance can meet the requirements of modern electronic technology ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B1/00C01B32/963C30B30/06
Inventor 王继刚张浩周清
Owner ZHANGJIAGANG DONGDA IND TECH RES INST