Preparing method for aluminum base silicon carbide

A technology of aluminum-based silicon carbide and aluminum powder, applied in metal processing equipment, transportation and packaging, etc., can solve the problems of many constraints, uneven material, low mechanical properties, etc., to improve sintering performance, uniform composition distribution, reduce Effect of sintering temperature
CN105400977AActive Publication Date: 2016-03-16李大海
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
李大海
Publication Date
2016-03-16

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Abstract

A preparing method for an aluminum base silicon carbide comprises the steps that firstly, SiC / Al slurry is prepared, SiC slurry is obtained through preparing of SiC micro powder, and aluminum powder and magnesium powder are added in proportion and are evenly mixed; secondly, tape casting is carried out, the SiC / Al slurry is subjected to defoaming, an initiating agent with the weight accounting for 1% to 3% of the total weight of the SiC / Al slurry and monomer with the weight accounting for 2% to 4% of the total weight of the SiC / Al slurry are added and are evenly mixed, and tape casting is carried out to obtain an SiC / Al cast film; thirdly, biscuiting is carried out on the cast film, wherein biscuiting is carried out on the casting film obtained in the second step, and an SiC / Al biscuit is obtained; and fourthly, vacuum sintering is carried out, and the SiC / Al biscuit is sintered in the vacuum state to obtain the aluminum base silicon carbide. The aluminum base silicon carbide is prepared through a gel tape casting method, obtained product components are evenly distributed, the porosity is low, the heat conduction rate is high, the magnesium powder is introduced, the sintering performance is improved, and the sintering temperature is reduced. The technology is simple, and energy consumption is low.
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Description

technical field

[0001] The invention relates to the technical field of manufacturing heat dissipation materials for light-emitting diodes, and more specifically relates to a method for preparing aluminum-based silicon carbide. Background technique

[0002] With the leap of LED manufacturing technology and the higher performance requirements of devices, newer and higher requirements are put forward for packaging materials, and traditional materials are no longer suitable for the packaging of high power density devices. The aluminum, copper, kovar materials or semiconductor materials used in large quantities in the past cannot meet the requirements of good thermal conductivity and lightness, and the cost is high, which can no longer meet the needs of the existing high power density, which makes the thermal management of electronic devices an important issue. bottleneck.

[0003] If the thermal management of electronic devices is not well resolved, it will lead to thermal fail...

Claims

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