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Electrochemical Treatment Method for Improving the Surface Properties of CuZnSnS Thin Films

A technology of copper-zinc-tin-sulfur and surface properties, applied in the field of solar cells, can solve the problems of high cost and serious environmental pollution, and achieve the effects of low production cost, simple process and improved performance

Active Publication Date: 2017-04-05
CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present invention is to provide an electrochemical treatment method for improving the surface properties of copper-zinc-tin-sulfur thin films for the deficiencies of the prior art, the problems of serious environmental pollution and high cost

Method used

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  • Electrochemical Treatment Method for Improving the Surface Properties of CuZnSnS Thin Films
  • Electrochemical Treatment Method for Improving the Surface Properties of CuZnSnS Thin Films
  • Electrochemical Treatment Method for Improving the Surface Properties of CuZnSnS Thin Films

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Experimental program
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Effect test

Embodiment 1

[0044] Embodiment 1 This embodiment is electrochemical treatment copper zinc tin sulfur thin film surface

[0045] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film 2 with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0046] Step (1): Put the copper-zinc-tin-sulfur thin film material 2 in a quartz tube furnace for selenization (or sulfide) annealing. Surface Raman diagram of CuZnSnS film 2 after annealing figure 2 shown. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;

[0047] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0048] Step (3): Put ...

Embodiment 2

[0051] Embodiment 2 This embodiment is the electrochemical treatment of copper zinc tin sulfur film surface

[0052] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0053] Step (1): placing the copper-zinc-tin-sulfur film material in a quartz tube furnace for selenization (or sulfide) annealing. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;

[0054] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0055] Step (3): Put the copper-zinc-tin-sulfur thin film 2 cleaned in step (2) into the treatment ...

Embodiment 3

[0058] Embodiment 3 This embodiment is electrochemically treating the surface of the copper-zinc-tin-sulfur thin film

[0059] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0060] Step (1): placing the copper-zinc-tin-sulfur film material in a quartz tube furnace for selenization (or sulfide) annealing. The annealed copper-zinc-tin-sulfur thin film material is connected to the working electrode of the electrochemical workstation 1, and the connection part is only Mo4 and the substrate 3;

[0061] Step (2): Soak the connected copper-zinc-tin-sulfur film 2 in absolute ethanol for 1 to 2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0062] Step (3): Put the copper-zinc-tin-sulfur thin film 2 cleaned in step (2) into the ...

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Abstract

The invention relates to the technical field of solar cells, and specifically discloses an electrochemical treatment method for improving surface properties of a copper zinc tin sulfide thin film. The method includes the steps of: selenizing or vulcanizing a copper zinc tin sulfide thin film material in a constant temperature tubular annealing furnace, then placing the material in an electrochemical workstation, and only connecting a substrate and a Mo back electrode with a working electrode; putting the material in absolute ethyl alcohol for soaking for 1 to 2 minutes, and removing surface particle impurities; putting the copper zinc tin sulfide thin film material in a treatment solution which is a mixed solution of 0.001~1M / L ethyl violet diperchlorate, 0.001~1M / L tetrabutylammonium hexafluorophosphate and an organic solvent; and applying an electrical signal which is any one of a cyclic voltammetry electrical signal, constant voltage electrical signal, constant current electrical signal, pulse voltage electrical signal or pulse current electrical signal. The method provided by the invention effectively removes a high-conductivity secondary phase on the surface of the copper zinc tin sulfide thin film, reduces the roughness of the surface of the thin film, optimizes an interface characteristic of contact with a window layer, is environment-friendly, and is low in cost.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to an electrochemical treatment method for improving the surface properties of a copper-zinc-tin-sulfur thin film. Background technique [0002] Solar energy is the most abundant energy among many renewable energy sources. The energy of global sunlight for one hour is equivalent to the energy consumption of the earth for a year, which is much higher than wind energy, geothermal energy, hydropower, ocean energy, biomass energy and other energy sources. The proportion of solar energy in the future energy structure will increase, and it is conservatively estimated that this proportion will exceed 60% in 2100. Therefore, solar cell research is an important topic for future energy development. [0003] Copper zinc tin sulfur (CuZn x sn y S z , can also include selenium Se, abbreviated as CZTS) is a derivative of copper indium gallium selenium CIGS, the crystal structu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032
CPCY02P70/50
Inventor 叶勤燕张永政廖成刘江何绪林刘焕明梅军
Owner CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
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