Bismuth oxyiodide / nitrogen doped graphene composite photocatalyst and preparation method thereof

A graphene composite, bismuth iodide technology, applied in the field of photocatalysis, can solve problems such as the composite rate limiting photocatalytic performance, and achieve the effects of excellent electron transport performance, large specific surface area, and improved photocatalytic performance

Active Publication Date: 2016-09-14
ZHEJIANG UNIV
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Problems solved by technology

However, as a single photocatalyst application, most of the photogenerated electron holes of BiOI are recombined during the process of migrating from the body to the surface

Method used

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  • Bismuth oxyiodide / nitrogen doped graphene composite photocatalyst and preparation method thereof
  • Bismuth oxyiodide / nitrogen doped graphene composite photocatalyst and preparation method thereof
  • Bismuth oxyiodide / nitrogen doped graphene composite photocatalyst and preparation method thereof

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[0042] Example 1:

[0043] The first step: 1) Using graphite powder as raw material, graphene oxide was prepared by Hume method. After several times of suction filtration and washing with deionized water and ethanol, deionized water was used as solvent to obtain graphene oxide suspension (2 mg / mL) 2) Mix and stir 50mL graphene oxide suspension with 1g urea (that is, the mass ratio of graphene oxide and urea is 0.1:1) for more than 12 hours, then dry and grind to obtain the mixed solid powder of graphene oxide and urea; 3 ) The above mixed solid powder is annealed at 1100 °C in a vacuum environment of less than 1 Pa to obtain N-doped graphene.

[0044] The second step: 1) 1.66g (10mM) potassium iodide was dissolved in 30mL of ethylene glycol, 30mg of N-doped graphene obtained in the first step was added, and the solution A was obtained by ultrasonic dispersion for 2h. 4.85g (10mM) bismuth nitrate pentahydrate (with potassium iodide and other substances, and the mass ratio of N...

Example Embodiment

[0046] Example 2:

[0047] The first step: 1) Using graphite powder as raw material, graphene oxide was prepared by Hume method. After several times of suction filtration and washing with deionized water and ethanol, deionized water was used as solvent to obtain graphene oxide suspension (1 mg / mL). ); 2) 100mL graphene oxide suspension and 1g urea (that is, the mass ratio of graphene oxide and urea is 0.1:1) were mixed and stirred for more than 12 hours, then dried and ground to obtain the mixed solid powder of graphene oxide and urea 3) The mixed solid powder is annealed at 1100° C. in a vacuum environment of less than 1 Pa to obtain N-doped graphene.

[0048] The second step: 1) 0.83g (5mM) potassium iodide was dissolved in 30mL of ethylene glycol, 30mg of N-doped graphene obtained in the first step was added, and the solution A was obtained by ultrasonic dispersion for 2h. 2.42g (5mM) of bismuth nitrate pentahydrate was dissolved in 30mL of ethylene glycol to obtain liquid...

Example Embodiment

[0050] Example 3:

[0051] The first step: 1) Using graphite powder as raw material, graphene oxide was prepared by Hume method. After several times of suction filtration and washing with deionized water and ethanol, deionized water was used as solvent to obtain graphene oxide suspension (2 mg / mL). ); 2) 50mL graphene oxide suspension and 1g urea (that is, the mass ratio of graphene oxide and urea is 0.1:1) are mixed and stirred for more than 12 hours, then dried and ground to obtain the mixed solid powder of graphene oxide and urea 3) The mixed solid powder is annealed at 1100° C. in a vacuum environment of less than 1 Pa to obtain N-doped graphene.

[0052] The second step: 1) 0.42g (2.5mM) potassium iodide was dissolved in 30mL of ethylene glycol, 50mg of N-doped graphene obtained in the first step was added, and the solution A was obtained by ultrasonic dispersion for 2h. 1.21g (2.5mM) of bismuth nitrate pentahydrate was dissolved in 30mL of ethylene glycol to obtain solu...

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Abstract

The invention discloses a BiOI / N doped graphene composite photocatalyst and a preparation method thereof. The method mainly comprises the following steps: 1) preparing a graphene oxide colloidal suspension mixing with urea by stirring, drying, conducting high vacuum thermal reduction to obtain N doped graphene; 2) conducting ultrasonic dispersion on the N doped graphene in the glycol solution of potassium iodide, and stirring and mixing without bismuth nitrate hydrate glycol solution; and 3) transferring the above mixed solution into an autoclave with teflon liner, conducting hydrothermal reaction to obtain a solid product; and conducting repeated centrifugation, washing and drying on the solid product. The BiOI / N doped graphene composite photocatalyst prepared by the invention comprises bismuth oxyiodide in flower-like particles and nitrogen doped graphene coated with the bismuth oxyiodide particles, and forms a p-n heterojunction on the interface. The catalyst prepared by the invention has excellent performance in the field of photocatalytic degradation of organic pollutants, and has potential application value in the field of photocatalytic treatment of sewage.

Description

technical field [0001] The invention relates to the field of photocatalysis, in particular to a bismuth oxyhalide composite photocatalyst and a preparation method thereof. Background technique [0002] Environmental pollution is a huge challenge faced by contemporary mankind. With the development of industrialization, the output of industrial wastewater containing organic and toxic pollutants has increased dramatically. Traditional sewage treatment methods are costly and energy-intensive. Semiconductor photocatalytic degradation of organic pollutant wastewater has become a promising method for wastewater treatment. Semiconductor photocatalysts use solar energy to degrade organic substances, and have the advantages of energy saving, no secondary pollution, green environmental protection, and wide applicability. [0003] The principle of the degradation of organic pollutants by semiconductor photocatalysts is: when light with photon energy equal to or greater than the forbi...

Claims

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Application Information

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IPC IPC(8): B01J27/24B01J27/06B01J35/10C02F1/30C02F101/34C02F101/38
CPCY02W10/37B01J27/24B01J27/06B01J35/004B01J35/10C02F1/30C02F2101/308C02F2101/34C02F2101/38C02F2305/10
Inventor 吕斌李辰旸叶志镇
Owner ZHEJIANG UNIV
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