LaFeO3/C carbon-based perovskite semiconductor composite nano material with visible photo-Fenton activity, preparation method and application thereof

Abstract

The invention discloses a LaFeO3 / C carbon-based perovskite semiconductor composite nano material with visible photo-Fenton activity, a preparation method and an application thereof. The preparation method comprises the following steps of: by adopting glucose as a carbon source, synthesizing a C nanosphere template with uniform size under the hydrothermal condition of 180 DEG C; adding the C nanosphere template into water solution containing La<3+> and Fe<3+>, leading the La<3+> and Fe<3+> to be adsorbed on the surface of the C nanosphere template with rich -C=O and -OH groups by an ultrasonically-assisted ion adsorption method, and calcining under the atmosphere of argon gas to synthesize the LaFeO3 / C carbon-based perovskite semiconductor composite nano material. The LaFeO3 / C carbon-based perovskite semiconductor composite nano material disclosed by the invention is simple in preparation and low in cost, is beneficial to industrial large-scale production, can be used as a visible photo-Fenton activity catalyst to degrade organic pollutants in the environment, and has certain potential application value in the fields of photocatalytic hydrogen production by water decomposition and gas sensing and the like.

Description

technical field [0001] The invention relates to a combination of an ultrasonic-assisted adsorption method and a high-temperature treatment method to obtain LaFeO 3 LaFeO supported on the surface of carbon sphere template by ultrafine particles 3 / C carbon-based perovskite semiconductor composite nanomaterials. It belongs to the field of preparation of perovskite nanocomposite materials and the field of environmental catalysis. Background technique [0002] With the aggravation of environmental pollution and the improvement of people's awareness of environmental protection, photocatalytic degradation of environmental pollutants has attracted more and more attention. As a photocatalytic candidate material, its band gap is required to be between 1.4-3.8eV. The influence of material morphology, structure, type and electric field on the recombination rate of photogenerated electron-hole pairs of semiconductor materials will play an important role in the degradation efficiency ...

AI Technical Summary

Problems solved by technology

Iron-based perovskite oxide semiconductor material AFeO 3 (typically BiFeO 3 、LaFeO 3 and YFeO 3 ) has a narrow band gap, so that they can produce electronic transitions under visible light irradiation conditions, thereby showing photocatalytic performance. Although there is this possibility, but for AFeO 3 There are still relatively few reports on photocatalysis

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