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A kind of p-type cunsno amorphous oxide semiconductor thin film and preparation method thereof

An amorphous oxide, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve the effect of promoting development and good material properties

Active Publication Date: 2020-05-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, the currently reported AOS TFTs are all n-type channel, lack of p-type channel AOS TFT, which greatly restricts the application of AOS TFT in new generation display, transparent electronics and many other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] (1) with high-purity Cu 2 O, SrO and SnO powders are used as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make CuSrSnO ceramic sheets as targets, where the atomic ratio of Cu, Sr, and Sn is 1:0.5:0.1;

[0027] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0028] (3) Passing Ar-O 2 For the working gas, the gas pressure is 1.0Pa, Ar-O 2 The flow volume ratio is 10:1, the sputtering power is 110W, and the substrate temperature is 25°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate to obtain p-type CuSr 0.5 sn 0.1 o 1.1 Amorphous thin film.

[0029] Using quartz as the substrate, p-type CuSr was prepared according to the above growth steps 0.5 sn 0.1 o 1.1 The film was tested for its structure, electri...

Embodiment 2

[0031] (1) with high-purity Cu 2 O, SrO and SnO powders are used as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make CuSrSnO ceramic sheets as targets, where the atomic ratio of Cu, Sr, and Sn is 1:0.5:0.2;

[0032] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0033] (3) Passing Ar-O 2It is the working gas, the gas pressure is 1.2Pa, Ar-O 2 The flow volume ratio is 10:2, the sputtering power is 120W, and the substrate temperature is 300°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate, which is naturally cooled to room temperature in an Ar atmosphere to obtain p-type CuSr 0.5 sn 0.2 o 1.2 Amorphous thin film.

[0034] Using quartz as the substrate, p-type CuSr was prepared according to the above growth ste...

Embodiment 3

[0036] (1) with high-purity Cu 2 O, SrO and SnO powders are used as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make CuSrSnO ceramic sheets as targets, where the atomic ratio of Cu, Sr, and Sn is 1:0.5:0.3;

[0037] (2) Using the radio frequency magnetron sputtering method, install the substrate and target in the sputtering reaction chamber, and evacuate to a vacuum degree of 9×10 -4 Pa;

[0038] (3) Passing Ar-O 2 For the working gas, the gas pressure is 1.5Pa, Ar-O 2 The flow volume ratio is 10:3, the sputtering power is 140W, and the substrate temperature is 500°C. 2 Under the bombardment of ions, the atoms and molecules on the surface of the target are sputtered out, and a thin film is deposited on the substrate, which is naturally cooled to room temperature in an Ar atmosphere to obtain p-type CuSr 0.5 sn 0.3 o 1.3 Amorphous thin film.

[0039] Using quartz as the substrate, p-type CuSr was prepared according to the above growth step...

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Abstract

The invention discloses a p-type CuNSnO amorphous oxide semiconductor thin film, wherein N element is not a group III element, has low standard potential and has high binding energy with O, the formed oxide is a high-resistance oxide, the band gap of the oxide is greater than 3 eV, and the N is any one of Si, Ge, Hf, Zr, Mg, Mn, Fe, Nb, V, Sr, Ba, Rh, Co, and Ca; the Cu is +1 valence copper, is the matrix element of a material, and combines with O to form p-type conductive property of the material; the N combines with O and serves as a control element of hole concentration in a matrix; and the Sn is +2 valence stannum, combines with O to form p-type conductive property, has a spherical electron orbit, has highly-coincided electron cloud in an amorphous state, and serves as a hole transmission channel. The invention further discloses a method for preparing the p-type CuNSnO amorphous oxide semiconductor thin film, which adopts a CuSrSnO ceramic chip as a target, and adopts an RF magnetron sputtering method. The hole concentration of the prepared p-type CuNSnO amorphous oxide semiconductor thin film reaches a range from 10<13> to 10<15> cm<-3>. The p-type CuNSnO amorphous oxide semiconductor thin film disclosed in the invention can be applied to a p-type amorphous thin film transistor.

Description

technical field [0001] The invention relates to an amorphous oxide semiconductor thin film, in particular to a p-type amorphous oxide semiconductor thin film and a preparation method thereof. Background technique [0002] Thin film transistor (TFT) is one of the core technologies in the field of microelectronics, especially display engineering. At present, TFT is mainly based on amorphous silicon (a-Si) technology, but a-Si TFT is opaque, has strong photosensitivity, and needs to add a mask layer. The pixel aperture ratio of the display screen is low, which limits the display performance. And the mobility of a-Si is low (~2 cm 2 / Vs), cannot meet some application requirements. Although TFT based on polysilicon (p-Si) technology has high mobility, its device uniformity is poor and its fabrication cost is high, which limits its application. In addition, organic semiconductor thin-film transistors (OTFT) have also been studied a lot, but the stability of OTFT is not high, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/24H01L21/02H01L29/786C23C14/35C23C14/08
CPCC23C14/08C23C14/35H01L21/02422H01L21/02565H01L21/02631H01L29/247H01L29/78693
Inventor 吕建国于根源
Owner ZHEJIANG UNIV
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