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Indium phosphide resistance variable material-based resistive random access memory and preparation method thereof

A technology of resistive variable memory and indium phosphide, which is applied in the direction of electrical components, etc., can solve the problems of rare research on resistive variable memory, and achieve the effect of improving defect state, good uniformity and stable optical performance

Inactive Publication Date: 2017-06-06
DONGGUAN JIAQIAN NEW MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Indium phosphide crystal is a direct bandgap semiconductor, which has the advantages of high thermal conductivity, high saturation electric field drift speed, and good radiation resistance. It is used in microwave and millimeter wave devices, heterojunction high electron mobility transistors, heterojunction bipolar Transistors, lasers, light-emitting diodes, detectors, radiation-resistant solar cells, and optoelectronic integrated circuits are widely used, but there are few researches on resistive memory based on indium phosphide.

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  • Indium phosphide resistance variable material-based resistive random access memory and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) In the high-pressure single crystal furnace, high-purity indium with a purity of 6N and high-purity red phosphorus with a purity of 6N are used as the main raw materials, indium sulfide and iron phosphide are used as dopants, and oxides with a water content of 500-2000ppm are used. Boron is used as a liquid sealant. Phosphorus-rich indium phosphide melts are obtained by using phosphorus injection rapid synthesis technology, and then seed crystals are introduced for crystal growth. Under an argon atmosphere, the crystals are pulled at a speed of 10mm / h to obtain a doped material with a diameter of 75mm. Single crystal indium phosphide sheets of S and Fe.

[0031] (2) Use the insulating inorganic material with platinum metal deposited on the surface as the substrate, put the single crystal indium phosphide sheet as the target into the cavity of the impact-resistant laser equipment, and put the insulating inorganic material substrate with electrodes deposited on the sur...

Embodiment 2

[0034] (1) In the high-pressure single crystal furnace, high-purity indium with a purity of 6N and high-purity red phosphorus with a purity of 6N are used as the main raw materials, indium sulfide and iron phosphide are used as dopants, and oxides with a water content of 500-2000ppm are used. Boron is used as a liquid sealant. Phosphorus-rich indium phosphide melts are obtained by using phosphorus injection rapid synthesis technology, and then seed crystals are introduced for crystal growth. Under an argon atmosphere, the crystals are pulled at a speed of 15mm / h to obtain a doped material with a diameter of 50mm. Single crystal indium phosphide sheets of S and Fe.

[0035] (2) Use the insulating inorganic material with platinum metal deposited on the surface as the substrate, put the single crystal indium phosphide sheet as the target into the cavity of the impact-resistant laser equipment, and put the insulating inorganic material substrate with electrodes deposited on the sur...

Embodiment 3

[0038] (1) In the high-pressure single crystal furnace, high-purity indium with a purity of 6N and high-purity red phosphorus with a purity of 6N are used as the main raw materials, indium sulfide and iron phosphide are used as dopants, and oxides with a water content of 500-2000ppm are used. Boron is used as a liquid sealant. Phosphorus-rich indium phosphide melts are obtained by using phosphorus injection rapid synthesis technology, and then seed crystals are introduced for crystal growth. Under an argon atmosphere, crystals are pulled at a speed of 12mm / h to obtain a doped indium phosphide with a diameter of 58.6mm. Single crystal indium phosphide sheet doped with S and Fe.

[0039](2) Use the insulating inorganic material with platinum metal deposited on the surface as the substrate, put the single crystal indium phosphide sheet as the target into the cavity of the impact-resistant laser equipment, and put the insulating inorganic material substrate with electrodes deposite...

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Abstract

The present invention provides an indium phosphide resistance variable material-based resistive random access memory and a preparation method thereof. The resistive random access memory comprises a platinum bottom electrode, an indium phosphide resistance variable material doped with S and Fe and a silver top electrode, and the preparation method comprises the steps of taking an insulating inorganic material of which the surface is deposited with platinum metal as a substrate, adopting a pulse laser technology to deposit an indium phosphide thin film on the surface of the substrate to form the indium phosphide resistance variable material, and then covering a hard mask on the surface of the indium phosphide resistance variable material, adopting a magnetron sputtering technology to deposit a silver electrode layer, and removing the mask to obtain the indium phosphide resistance variable material-based resistive random access memory. According to the present invention, an indium phosphide single crystal wafer and a preparation method of the indium phosphide single crystal wafer of utilizing the pulse laser technology to deposit the indium phosphide thin film, are limited, so that the consistency and stability of the indium phosphide resistance variable material in the resistive random access memory are guaranteed, and the resistive random access memory has the characteristics of being wide in storage window, long in data hold time and high in durability.

Description

technical field [0001] The invention belongs to the technical field of resistive memory materials, and in particular relates to a resistive memory based on an indium phosphide resistive material and a preparation method thereof. Background technique [0002] Non-volatile memory refers to a type of memory in which the data stored will not disappear when the power is turned off. With the continuous development of science and technology, people focus on some materials with special properties, and constantly break through the traditional non-volatile memory. Memory storage limit, speed limit, density limit and power consumption limit. [0003] Resistive variable memory (RRAM) uses two or more different resistance states of certain thin film materials under the action of an applied electric field to realize data storage. It has the advantages of high frequency, multi-valued storage and three-dimensional storage potential. The materials currently used in resistive memory include...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
CPCH10N70/884H10N70/041H10N70/026
Inventor 王海燕
Owner DONGGUAN JIAQIAN NEW MATERIAL TECH CO LTD
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