Method for reducing stress of micromechanical beam membrane, and relevant low-stress membrane

A thin-film stress and micro-mechanical technology, applied in the field of micro-electromechanical systems, can solve problems such as film structure expansion, film structure rupture, device failure, etc., and achieve the effects of enhanced mechanical strength, high Young's modulus, and improved reliability

Inactive Publication Date: 2018-01-12
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF11 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For membrane actuators, excessive tensile residual stress (tensile stress) will cause the membrane structure to rupture, while excessive compressive residual stress (compressive stress) will cause the membrane structure to expand or warp, and the above two Both conditions will cause the device to fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for reducing stress of micromechanical beam membrane, and relevant low-stress membrane
  • Method for reducing stress of micromechanical beam membrane, and relevant low-stress membrane
  • Method for reducing stress of micromechanical beam membrane, and relevant low-stress membrane

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a low-stress composite film for micromechanical beams, specifically comprising the steps of:

[0031] (1). A silicon wafer 1 with a crystal plane index of , a plane size of 1cm×1cm, and a thickness of 500μm is selected as the substrate. There is a silicon dioxide layer formed by thermal oxidation on the surface of the substrate. The thickness of the silicon dioxide layer is The above substrate was placed in a mixed system of concentrated sulfuric acid:hydrogen peroxide with a volume ratio of 7:3, heated and boiled for 10 minutes, then cleaned with deionized water for 15 times, then ultrasonically treated for 30 minutes, and placed in a nitrogen atmosphere at Dry at 180°C to obtain figure 1 The structure shown in a;

[0032] (2). The substrate obtained through step (1) is placed in the vacuum chamber of the electron beam evaporator to evaporate a metal titanium layer 3 with a thickness of 5nm, such as figure 1 As shown in b, the effect of the met...

Embodiment 2

[0037] A method for preparing a low-stress composite film for micromechanical beams, specifically comprising the steps of:

[0038] (1). A silicon wafer 1 with a crystal plane index of , a plane size of 1cm×1cm, and a thickness of 500μm is selected as the substrate. There is a silicon dioxide layer formed by thermal oxidation on the surface of the substrate. The thickness of the silicon dioxide layer is The above substrate was placed in a mixed system of concentrated sulfuric acid:hydrogen peroxide with a volume ratio of 7:3, heated and boiled for 10 minutes, then cleaned with deionized water for 15 times, then ultrasonically treated for 30 minutes, and placed in a nitrogen atmosphere at Dry at 180°C to obtain figure 1 The structure shown in a;

[0039] (2). Place the substrate obtained through step (1) in the vacuum chamber of the electron beam evaporator to vapor-deposit a metal titanium layer 3 with a thickness of 5 nm, such as figure 1 As shown in b, the effect of the me...

Embodiment 3

[0044]A method for preparing a low-stress composite film for micromechanical beams, specifically comprising the steps of:

[0045] (1). A silicon wafer 1 with a crystal plane index of , a plane size of 1cm×1cm, and a thickness of 500μm is selected as the substrate. There is a silicon dioxide layer formed by thermal oxidation on the surface of the substrate. The thickness of the silicon dioxide layer is The above substrate was placed in a mixed system of concentrated sulfuric acid:hydrogen peroxide with a volume ratio of 7:3, heated and boiled for 10 minutes, then cleaned with deionized water for 15 times, then ultrasonically treated for 30 minutes, and placed in a nitrogen atmosphere at Dry at 180°C to obtain figure 1 The structure shown in a;

[0046] (2). Place the substrate obtained through step (1) in the vacuum chamber of the electron beam evaporator to vapor-deposit a metal titanium layer 3 with a thickness of 5 nm, such as figure 1 As shown in b, the effect of the met...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of micro-electro-mechanical systems, and provides a method for reducing the stress of a micromechanical beam membrane, and the relevant membrane. The method and the membrane provided by the invention have the advantages that a single-layer grapheme membrane is added to a composite membrane formed by a plurality of layers of metal membranes and used as atransition layer, and the high temperature annealing process is adopted to release the pressure stresses generated by the metal membranes and enlarge a binding force of the composite membrane and a substrate; a larger tensile stress of grapheme can interact with the residual pressure stresses of an upper metal layer and a lower metal layer, so that the internal stress of the multilayer compositemembrane can be reduced to the largest extent, the defect of warping caused by a smaller binding strength of the substrate and the membrane due to an excessively large internal stress can be further avoided, and the carrying capacity of the composite membrane can be improved, which further enhances the mechanical strength of a micromechanical beam and improves the device reliability; and the manufacturing process is simple, the cost is low, and the repeatability is high, so that a foundation can be laid for the research, development and production of high-performance micro-components and micro-devices and interconnection structures.

Description

technical field [0001] The invention belongs to the technical field of micro-electromechanical systems, and in particular relates to a method for reducing the stress of a micro-mechanical beam film and a related film. Background technique [0002] Micro-Electro-Mechanical Systems (Miro-Electro-Mechanical Systems, MEMS) is an integrated micro-device or system composed of electronic and mechanical components. MEMS devices have the characteristics of "pieces", namely miniaturization, microelectronics integration and high-precision batch manufacturing. Traditional MEMS devices are usually divided into sensors and actuators. Sensors can sense physical and chemical stimuli, while actuators can generate mechanical motion. As An important part of a MEMS device, the micro-mechanical beam that can be used for mechanical movement reflects the mechanical nature of the MEMS device. The micro-mechanical beam usually adopts a thin-film structure, and the mechanical parameters of the thin-f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81B3/00B81C1/00
Inventor 王忆文张亭王弘喆陈兆隽安佳琪鲍景富
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap