Conjugate PI bridge connected furan based n-type conjugated polymer and application thereof in organic photoelectric devices

A conjugated polymer and conjugated technology, applied in the direction of electric solid-state devices, photovoltaic power generation, electrical components, etc., can solve the problems of insufficient absorption spectrum and low absorption coefficient, so as to improve photocurrent and battery device efficiency, and improve absorption coefficient, the effect of broadening the absorption spectrum

Inactive Publication Date: 2018-02-09
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main reason is that the absorption coefficient of the existing r

Method used

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  • Conjugate PI bridge connected furan based n-type conjugated polymer and application thereof in organic photoelectric devices
  • Conjugate PI bridge connected furan based n-type conjugated polymer and application thereof in organic photoelectric devices
  • Conjugate PI bridge connected furan based n-type conjugated polymer and application thereof in organic photoelectric devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] A representative synthetic route is as follows:

[0034]

[0035] (1) Monomers M1 and M6 were synthesized according to the method disclosed in the literature [Journal of Materials Chemistry C, 2015, 3(34):8904-8915.].

[0036] (2) Monomers M2, M3, and M4 were synthesized according to the method disclosed in the literature [Journal of the American Chemical Society, 2016, 138(11): 3679-3686..].

[0037] (3) Synthesis of polymers P1, P2, P3:

[0038] Add monomer M1 (0.5mmol) and monomer M2 (0.5mmol) into a 25mL two-necked flask, pass through nitrogen protection, and add 8mL of toluene. Add 5mg Pd(PPh 3 ) 4 , After reacting at 95°C for 12h, the polymer was precipitated with methanol and washed three times. A dark polymer P1 was obtained with a yield of 90.7%.

[0039] Add monomer M1 (0.5 mmol) and monomer M3 (0.5 mmol) into a 25 mL two-necked flask, pass through nitrogen protection, and add 12 mL of toluene. Add 7mg Pd(PPh 3 ) 4 , After reacting at 95°C for 12h, ...

Embodiment 2

[0046] Using the conjugated polymers P1, P2, and P3 synthesized in Example 1 (the AB components in the structure are the same) as electron acceptors in organic solar cells (ITO cathode / cathode interface layer / active layer / anode-machine interface layer / anode) in the application.

[0047] Pre-cut the ITO conductive glass with a square resistance of 20 ohms / cm2 into 15mm×15mm square pieces. Use acetone, special detergent for micron-sized semiconductors, deionized water, and isopropanol to clean ultrasonically in sequence, blow nitrogen whistle, and place in a constant temperature oven for later use. Spin-coat a layer of 5nm thick PFN-Br on ITO, then spin-coat active layer materials PTB7-Th / P1, PTB7-Th / P2, PTB7-Th / P3 with a thickness of 110nm, and finally evaporate MoO 3 and Al electrodes. All preparations were carried out in a glove box under a nitrogen atmosphere. The current-voltage curves of the fabricated flip-chip devices are as follows: Figure 4 The relevant data are l...

Embodiment 3

[0049] Using the conjugated polymers P1, P2, and P3 synthesized in Example 1 (with the same AB components in the structure) as electron acceptors in organic solar cells (ITO anode / anode interface layer / active layer / cathode interface layer / cathode) in the application.

[0050] Pre-cut the ITO conductive glass with a square resistance of 20 ohms / cm2 into 15mm×15mm square pieces. Use acetone, special detergent for micron-sized semiconductors, deionized water, and isopropanol to clean ultrasonically in sequence, blow nitrogen whistle, and place in a constant temperature oven for later use. Spin-coat a layer of PEDOT:PSS with a thickness of 20 nm on the ITO, and then spin-coat the active layer materials PTB7-Th / P1, PTB7-Th / P2, and PTB7-Th / P3 with a thickness of 100 nm. Then spin-coat a layer of PFN-Br with a thickness of 5nm, and finally evaporate Al electrodes. All preparations were carried out in a glove box under a nitrogen atmosphere. The current-voltage curves of the prepar...

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Abstract

The invention relates to a conjugate PI bridge connected furan based n-type conjugated polymer and an application thereof in organic photoelectric devices. The conjugated polymer consists of two parts, i.e., naphthalimide and a conjugate PI bridge connected furan structure. The conjugated polymer has a relatively wide absorption spectrum, a relatively great absorption coefficient and relatively high electron mobility and can be applied to efficient organic solar cells as an efficient electron acceptor. According to the conjugate PI bridge connected furan based n-type conjugated polymer and theapplication thereof in the organic photoelectric devices, the D-A copolymerized n-semiconductor conjugated polymer is designed, thus, the absorption coefficient of the polymer can be greatly increased, the absorption spectrum is widened, the photocurrent of cell devices and the efficiency of the cell devices can be greatly improved; and the novel n-type conjugated polymer can achieve the equilibrium of short-circuit current, open-circuit voltage and packing factor as the electron acceptor, full-polymer solar cells with the energy conversion efficiency exceeding 10% are prepared, and the performance of the full-polymer solar cells is far superior to that of cells based on the existing acceptors.

Description

technical field [0001] The invention relates to the field of macromolecular optoelectronic materials, in particular to n-type conjugated polymers based on conjugated π bridge-connected furan and their application in organic optoelectronic devices. Background technique [0002] With the increasing global demand for energy, the depletion of traditional energy sources such as oil and coal, and the need to protect the earth's ecological environment, more and more scientists around the world are focusing their research on inexhaustible hydrogen, solar energy, etc. Inexhaustible renewable clean energy. [0003] Mature solar cells based on inorganic materials such as inorganic silicon, gallium arsenide, and indium phosphide have dominated the market. However, due to their high requirements for material purity, problems such as high energy consumption and pollution will occur during processing. And its price is very expensive, so its large-scale application is limited in today's pu...

Claims

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Application Information

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IPC IPC(8): C08G61/12H01L51/46
CPCC08G61/12C08G61/125C08G2261/3222C08G2261/18C08G2261/124C08G2261/3241C08G2261/91C08G2261/414H10K85/111Y02E10/549
Inventor 黄飞胡志诚应磊曹镛
Owner SOUTH CHINA UNIV OF TECH
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