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A preparation method of long afterglow nanocrystals controlled by emission wavelength

A technology with emission wavelength and long afterglow, applied in nanotechnology, nano-optics, nanotechnology and other directions, it can solve the problems of requiring special equipment and high risks, and achieve the effects of controllable emission wavelength, low cost and simple operation.

Active Publication Date: 2020-08-21
喀什大学
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The preparation of the silicate system requires high-temperature calcination under a reducing atmosphere (a mixture of hydrogen and nitrogen) to reduce trivalent europium to divalent europium. This method requires special equipment and is very dangerous.

Method used

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  • A preparation method of long afterglow nanocrystals controlled by emission wavelength
  • A preparation method of long afterglow nanocrystals controlled by emission wavelength
  • A preparation method of long afterglow nanocrystals controlled by emission wavelength

Examples

Experimental program
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Effect test

Embodiment 1

[0024] A method for preparing long afterglow nanocrystals controlled by emission wavelength, which is prepared by ethylene glycol-assisted hydrothermal method, and the steps are as follows:

[0025] 1) Preparation of gallium nitrate solution: reflux gallium oxide solid and 1:3 nitric acid solution at 100° C. until gallium oxide is completely dissolved, so that the concentration of the solution is 0.20 mol / liter.

[0026] 2) Preparation of indium trichloride solution: Stir the indium trichloride solid and deionized water until the indium trichloride is completely dissolved, so that the concentration of the solution is 0.20 mol / liter.

[0027] 3) Preparation of chromium nitrate solution: Stir the chromium nitrate solid and deionized water until the chromium nitrate is completely dissolved, so that the concentration of the solution is 0.01 mol / liter.

[0028] 4) Mix ethylene glycol, the gallium nitrate solution obtained in step 1), the indium trichloride solution obtained in step...

Embodiment 2

[0036] A method for preparing long-lasting nanocrystals regulated by emission wavelength, which is prepared by ethylene glycol-assisted hydrothermal method. The steps and methods are basically the same as those in Example 1, except that:

[0037] The reflux temperature in step 1) is 90°C;

[0038] In step 4), the mass ratio of gallium nitrate aqueous solution and indium trichloride aqueous solution in the mixed solution was changed to 55.78:1.53:0.575:0.016; the mixed solution was obtained by stirring at a temperature of 18°C ​​for 30 minutes, and then the mass percentage concentration was 15%. ammonia water to adjust the pH of the mixed solution to 7.0, and continue to stir at a temperature of 18° C. for 1 hour to obtain a mixed solution;

[0039] Step 5) The temperature of the reactor is set to 190° C., and the hydrothermal treatment is carried out for 20 hours;

[0040] Step 6) centrifuge rotation speed is 8000rpm;

[0041] Step 7) drying in a vacuum oven at a temperature...

Embodiment 3

[0045] A method for preparing long-lasting nanocrystals regulated by emission wavelength, which is prepared by ethylene glycol-assisted hydrothermal method. The steps and methods are basically the same as those in Example 1, except that the pH of the mixed solution is changed to 8 in step 4). .

[0046] The long afterglow luminescent nanocrystal prepared in this example was taken as the observation afterglow and characterization sample, and the test results were similar to those in Example 1.

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Abstract

The invention discloses a preparation method of a long afterglow nanocrystal with controllable emission wavelength. The long afterglow nanocrysta is prepared by adopting an ethylene glycol assisted hydrothermal route. The method comprises the following steps: taking ethylene glycol as an assistant, and taking a gallium nitrate solution and an indium trichloride solution as a substrate; doping a chromium ion mixed solution and uniformly stirring; carrying out special water treatment at the temperature of 170 DEG C, and carrying out centrifugal separation and vacuum drying; finally, calcining aproduct in a muffle furnace at the temperature of 700DEG C and 1000DEG C in sequence, thus obtaining the long afterglow nanocrystal with the average particle size of about 20 nanometers and the adjustable emission wavelength. The preparation method disclosed by the invention has the advantages that the long afterglow nanocrystal prepared by the method has excellent properties of smaller size, controllable emission wavelength within a near infrared light zone (about 770 nanometers), long afterglow and the like; the preparation method has the characteristics of simple operation, low cost, no reductive atmosphere in the preparation process and no pollution to the environment.

Description

technical field [0001] The invention belongs to the technical field of preparation of long afterglow luminescent materials, and in particular relates to a preparation method of near-infrared long afterglow nanocrystals whose emission wavelength is regulated. Background technique [0002] Long afterglow luminescent materials have a very long luminous lifetime, and they can continue to emit light for a long time (>1h) after being excited by high energy, so they are also called light-storing luminescent materials or luminous materials. The long-lasting luminescence phenomenon is caused by the slow release of electrons trapped by traps under thermal excitation. At present, long afterglow luminescent materials are widely used in lighting, equipment marking, solar energy storage, information storage, high-energy ray detection, safety emergency instructions, transportation, military, and biomedicine. Although long-lasting materials have developed rapidly in the past two decades...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/62C01G15/00B82Y20/00B82Y40/00
CPCB82Y20/00B82Y40/00C01G15/00C01P2002/01C01P2002/80C01P2004/04C01P2004/64C09K11/623
Inventor 阿不都卡德尔·阿不都克尤木艾力江·吐尔地
Owner 喀什大学
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