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A protective coating with high hardness and hydrophobic properties, its preparation method and application

A protective coating and hydrophobic technology, which is applied in the coating, metal material coating process, vacuum evaporation plating, etc., can solve the problem of deterioration of the mechanical properties of the film, and achieve the effects of enhanced mechanical properties, simple preparation process, and high efficiency

Active Publication Date: 2019-11-05
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Generally, Cu atoms are easy to aggregate to form clusters, however, when Cu phase structure appears in the film, it will deteriorate the mechanical properties of the film and lead to a more hydrophilic

Method used

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  • A protective coating with high hardness and hydrophobic properties, its preparation method and application
  • A protective coating with high hardness and hydrophobic properties, its preparation method and application
  • A protective coating with high hardness and hydrophobic properties, its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) Substrate pretreatment: Before the single crystal Si(100) substrate is loaded into the sputtering chamber, it needs to be pretreated. Use acetone, absolute ethanol and deionized water to clean it sequentially for 15 minutes, and blow it with nitrogen. Dry;

[0019] (2) Target installation and vacuuming: install the substrate obtained by the above cleaning on the sample stage, and install the Ta target and the Cu target on the target stage respectively, close the vacuum chamber, and turn on the mechanical pump and the molecular pump to vacuumize successively , the vacuum degree needs to reach 8×10 -4 Below Pa;

[0020] (3) Pre-sputtering: before the start of sputtering, in order to remove the impurity atoms adsorbed on the target, such as oxygen on the Ta target, copper oxide on the surface of the Cu target, etc., pure argon gas is introduced to pre-sputter the target. Sputtering for 15 minutes, and then depositing a pure metal Ta coating on the substrate Si as a t...

Embodiment 2

[0025] With embodiment 1, the sputtering parameter in step 4 is:

[0026] High-purity Ta and Cu are used as target sources, where Ta target is connected to DC power supply, Cu target is connected to RF power supply, Ar and N 2 As discharge gas, deposit TaCuN film on single crystal silicon substrate, where the power of Ta target is 200W, the power of Cu target is 5W (the power ratio of Cu and Ta is 2.5:100), and the total sputtering pressure is 0.8Pa , Ar and N 2 The flow rate ratio is 2.2~1, the deposition temperature is controlled at room temperature, the target base distance is 80mm, and the vacuum degree is 8×10 -4Pa, the voltage applied to the substrate is -200V.

[0027] The TaCuN thin film obtained under this condition has a Ta content of 49.6%, a N content of 48.5%, and a copper content of 1.9%. It was proved by XRD and selected electron diffraction that the TaCuN thin film structure obtained at this time is a TaCuN replacement solid solution with a cubic structure a...

Embodiment 3

[0029] With embodiment 1, the sputtering parameter in step 4 is:

[0030] Using the co-sputtering method, high-purity Ta and Cu are used as target sources, where the Ta target is connected to a DC power supply, the Cu target is connected to a radio frequency power supply, Ar and N 2 As discharge gas, deposit TaCuN film on single crystal silicon substrate, where the power of Ta target is 200W, the power of Cu target is 12W (the power ratio of Cu and Ta is 6:100), and the total sputtering pressure is 0.7Pa , the deposition temperature is controlled at room temperature, the target base distance is 80mm, and the vacuum degree is 8×10 -4 Pa, Ar and N 2 The flow rate ratio is 2.0-1, and the voltage applied on the substrate is -100V;

[0031] The TaN film obtained under this condition has a Ta content of 41.3%, a N content of 49.1%, and a copper content of 7.8%. It was proved by XRD and selected electron diffraction that the TaCuN thin film structure obtained at this time is a TaC...

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Abstract

The invention relates to a high-hardness hydrophobic protective coating and a preparation method and application thereof in the technical field of surface modification of cutting tools, drilling toolsand the like. A higher sputtering rate is obtained through direct current sputtering Ta, a low sputtering rate is obtained through radio-frequency sputtering Cu, precision control of Cu content is finally realized while solid solution is realized by replacement of Ta with a TaN structure, electronic structures around N atoms and Ta are damaged, a spontaneous oxidation process is caused while cuprous oxide is acquired from film surface to give play to a filled shell electronic structure of the cuprous oxide to achieve a water repellent effect, and a water contact angle is larger than 100 degrees. Forming of the solid solution further enhances TaN mechanical properties and improves hardness to 35GPa or above. The preparation method of the coating is simple and efficient, simple in process and low in cost, and extensive application in fields of earth interior mineral resource and energy resource exploration and development and deep sea detection boring tool and cutting tool protection.

Description

technical field [0001] The invention belongs to the technical field of thin film materials, and in particular relates to a coating obtained by doping metal Cu with tantalum nitride (TaN) to obtain a replacement solid solution structure and a preparation method thereof. Substituting copper atoms for the transition metal tantalum (Ta) to form a cubic TaCuN displacement solid solution coating can enhance the mechanical properties of TaN and transform it into a hydrophobic surface, making it able to withstand harsher conditions in practical applications. Background technique [0002] Tantalum nitride has excellent physical properties, such as high hardness, good thermal stability, chemical inertness and high melting point, etc. These properties make tantalum nitride a great potential application in the cutting tool and hard coating industries. However, the surface of tantalum nitride has a large number of polar sites, making it hydrophilic (water contact angle is less than 90 d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/06C23C14/34
CPCC23C14/0036C23C14/0641C23C14/3464
Inventor 张侃张玉基戴萱杨丽娜文懋郑伟涛
Owner JILIN UNIV
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