A graphene-modified copper foil electrode for silicon-based negative power batteries
A technology of graphene modification and power battery, which is applied in the direction of battery electrodes, secondary batteries, electrode carriers/collectors, etc., and can solve problems such as easy powder drop, unstable SEI film, and low coulombic efficiency of the first charge and discharge.
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Embodiment 1
[0025] This embodiment discloses a graphene-modified copper foil electrode for a silicon-based negative power battery, which mainly includes the following steps:
[0026] 1) First, pretreat the copper foil. The copper foils were sequentially placed in a concentration of 5wt% FeCl 3 and a concentration of 5wt% HCl dilute solution for 30min to remove the oxide layer on the surface of the copper foil, and then placed in Ar / H 2 Annealing at 1000°C for 30 minutes in a mixed atmosphere to further reduce the surface roughness, stabilize the surface morphology of the copper foil to reduce the number of nucleation points for graphene growth, and eliminate surface structural defects to achieve the growth of single crystal or polycrystalline graphene films;
[0027] 2) Place the copper foil in a quartz tube reaction furnace, use ethylene as the carbon source, and synthesize a continuous few-layer graphene film on the copper foil by CVD. The growth temperature is 750°C, and the flow rate...
Embodiment 2
[0031] This embodiment discloses a graphene-modified copper foil electrode for a silicon-based negative power battery, which mainly includes the following steps:
[0032] 1) First, pretreat the copper foil. The copper foils were sequentially placed in a concentration of 5wt% FeCl 3 and a concentration of 5wt% HCl dilute solution for 10min to remove the oxide layer on the surface of the copper foil, and then placed in Ar / H 2 Annealing at 800°C for 30 minutes in a mixed atmosphere to further reduce the surface roughness, stabilize the surface morphology of the copper foil to reduce the number of nucleation points for graphene growth, and eliminate surface structural defects to achieve the growth of single crystal or polycrystalline graphene films;
[0033] 2) Place the copper foil in a quartz tube reaction furnace, use ethylene as the carbon source, and synthesize a continuous few-layer graphene film on the copper foil by CVD. The growth temperature is 900°C, and the flow rate ...
Embodiment 3
[0037] This embodiment discloses a graphene-modified copper foil electrode for a silicon-based negative power battery, which mainly includes the following steps:
[0038] 1) First, pretreat the copper foil. The copper foils were sequentially placed in a concentration of 5wt% FeCl 3 and a concentration of 5wt% HCl dilute solution for 30min to remove the oxide layer on the surface of the copper foil, and then placed in Ar / H 2 Annealing at 900°C for 20 minutes in a mixed atmosphere to further reduce the surface roughness, stabilize the surface morphology of the copper foil to reduce the number of nucleation points for graphene growth, and eliminate surface structural defects to achieve the growth of single crystal or polycrystalline graphene films;
[0039] 2) Place the copper foil in a quartz tube reaction furnace, use ethylene as the carbon source, and synthesize a continuous few-layer graphene film on the copper foil by CVD. The growth temperature is 800°C, and the flow rate ...
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