Discharge gap control system and control method for wire electric discharge cutting single crystal silicon

Abstract

The invention discloses a discharging gap control system for wire electrical discharging machining monocrystalline silicon. The discharging gap control system comprises a wire electrical discharging machining machine tool and a pulsed power supply, wherein a monocrystalline silicon workpiece and a cutting line of the wire electrical discharging machining machine tool are connected onto the anode and the cathode of the pulsed power supply separately; a stepping motor and a motor driver are sequentially arranged in the feeding direction of the monocrystalline silicon workpiece of the wire electrical discharging machining machine tool; the motor driver is sequentially connected with a data acquisition unit and computer through an AD converter; the discharging loop of the wire electrical discharging machining machine tool is connected with a sampling resistor in series; and the sampling resistor is connected with the AD converter, so that the spark discharge gap is kept within a reasonablerange during the machining process, generation of an open circuit or a short circuit is avoided and the surface quality of the monocrystalline silicon workpiece is improved. A discharging gap controlmethod has significance for realizing wire electrical discharging machining of a monocrystalline silicon semiconductor and obtaining excellent wafer surface processing quality and processing efficiency.

Description

technical field [0001] The invention belongs to the technical field of high-precision special processing and manufacturing, and relates to a discharge gap control system for wire electric discharge cutting single crystal silicon, and also relates to a discharge gap control method for wire electric discharge cutting single crystal silicon using the discharge gap control system . Background technique [0002] As an important semiconductor material, monocrystalline silicon is widely used in large-scale integrated circuit manufacturing, microelectronic components and other fields due to its good high temperature resistance and radiation resistance, and is therefore considered the cornerstone of the modern information society. Although silicon material is only the first generation semiconductor material, due to the abundant reserves of mineral resources containing silicon on the earth, and single crystal silicon is the single crystal with the largest diameter, the most perfect pr...

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Problems solved by technology

[0004] At present, the research on the EDM of single crystal silicon materials focuses on the influence process of the process parameters of the discharge process on the process target, and controls the electrical parameters of the process, such as voltage and current, so that it is in the normal state control stage of spark discharge. , there are relatively few researches on strategies and algorithms for real-time adjustment of discharge gap by real-time online process parameter control. The author believes that the actual EDM cutting process of single crystal silicon must be the result of simultaneous action of mechanical and electrical parameters

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