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An organic field effect transistor memory based on nano lattice molecules and its preparation method

A nano-lattice and molecular storage technology, applied in semiconductor/solid-state device manufacturing, organic chemistry, electrical solid-state devices, etc., can solve the problems of difficult to achieve multi-level storage, poor device repeatability, poor data stability, etc., to improve charge maintenance Ability and Tolerance Ability, Reduced Preparation Cost, Effect of Low Cost

Active Publication Date: 2020-09-22
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, organic memory still faces the following challenges: (1) high operating voltage (>100V), slow response speed (>1s), low storage density (difficult to achieve multi-level storage), poor data stability (maintenance time 5 s); (2) The device performance shows obvious dependence on spin coating conditions, film thickness, and electrode type, which shows that the material, interface and device structure also determine the device performance, and the repeatability of the device is often poor

Method used

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  • An organic field effect transistor memory based on nano lattice molecules and its preparation method
  • An organic field effect transistor memory based on nano lattice molecules and its preparation method
  • An organic field effect transistor memory based on nano lattice molecules and its preparation method

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Embodiment 1

[0056] When X is C; Y is S; R is a straight-chain octyloxy group, and G1, G2, G3, and G4 are all hydrogen, and the lattice molecular structures are as follows:

[0057]

[0058] The synthetic route is as follows:

[0059]

[0060] The specific preparation method is as follows: dithiophene is obtained by coupling thiophene monomer under the catalysis of Pd / C, and monobromofluorenone is obtained by Grignard reaction and Friedel–Crafts reaction to obtain compound 3, and the boronic acid of compound 3 and 2 is obtained in Pd(PPh 3 ) 4 Catalyst, alkaline solution choose K 2 CO 3 Under Suzuki coupling under / KF conditions, the monosubstituted L-shaped precursor can be obtained efficiently. The L-shaped precursor is located at the Et through its own dual-site tertiary alcohol group and the α-position of thiophene 2 O·BF 3 Catalyzed Friedel–Crafts reaction ring closure to obtain nano-lattice molecules.

[0061] Compound 1: 2-bromothiophene (5.0g, 30.6mmol), 10% Pd / C (1.6g,...

Embodiment 2

[0067] The electrochemical determination of nano-lattice molecular materials was measured at the CHI 660D electrochemical workstation of Shanghai Chenhua Instrument Co., Ltd., using a three-electrode system Pt sheet electrode as the working electrode, platinum wire as the auxiliary electrode, and a calomel electrode as the reference electrode . Test with 0.1M tetrabutylammonium fluoroborate (Bu 4 NPF 6 ) is the electrolyte solution, and ferrocene is used as the internal standard (0.40V). Before the electrolyte solution is used, nitrogen gas is passed into it for 20 minutes to remove oxygen, and the chloroform solution of the polymer is drip-coated on the working Pt electrode to form a film. The speed is 50mV / s. According to the oxidation peak and reduction peak generated during the scanning process, the HOMO energy level and LUMO energy level are calculated by analyzing the initial oxidation / reduction potential of the oxidation peak or reduction peak that appears. Such as ...

Embodiment 3

[0069] Thermogravimetric analysis (TGA) was performed on a Shimadzu DTG-60H thermogravimetric analyzer with a heating scan rate of 10 °C / min and a nitrogen flow rate of 20 cm 3 / min. Differential scanning calorimetry (DSC) was carried out on a Shimadzu DSC-60A tester. The sample was first heated at a rate of 10°C / min to a state ten degrees lower than the decomposition temperature of the sample, and then, under liquid nitrogen conditions The temperature was lowered back to the starting temperature, and the temperature was scanned at a rate of 10°C / min for the second time. From the TGA experiment, the temperature (T d ) are 458.05°C, respectively. DSC experiments showed no obvious glass transition temperature.

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Abstract

The invention discloses an organic field effect transistor memory based on nano-lattice molecules and a preparation method thereof, belonging to the field of organic electronics and information technology. The storage device comprises source and drain electrodes, an organic semiconductor layer, a nano-lattice molecular storage layer, a gate insulating layer, a substrate and a gate electrode formed on the substrate in order from top to bottom. The memory of the present invention belongs to a typical charge capture-release mechanism. Compared with polymer electret memory and floating gate memory, it shows obvious charge maintenance stability, tolerance, large storage window and storage density, and also shows Organic memory is suitable for advantages such as flexibility, large area, and low process cost. The invention prepares the storage device through simple process means, greatly improves the storage capacity, switching speed and stability, reduces the device preparation cost, and is convenient for popularization and application.

Description

technical field [0001] The invention belongs to the field of organic electronics and information technology, and specifically relates to an organic field effect transistor memory based on nano-lattice molecules and a preparation method thereof, which can be applied to the fields of semiconductor storage technology, computer, artificial intelligence and the like. Background technique [0002] In the era of mobile Internet and big data, human beings will enter the era of consciousness served by intelligent machines. Storage as the home of data is an indispensable element of information technology and future artificial intelligence. The rapid development of information technology requires future memory to be faster, smaller in size, higher in storage density, simpler in manufacturing process, flexible, thin and portable. The non-volatile memory based on the organic field effect transistor (OFET) structure not only has the characteristics of fast storage speed and large storage ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40C07D495/22
CPCC07D495/22H10K71/12H10K85/00H10K10/46
Inventor 解令海余洋卞临沂仪明东黄维
Owner NANJING UNIV OF POSTS & TELECOMM