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A kind of method for preparing nano-silicon carbide at low temperature

A nano-silicon carbide and low-temperature technology, applied in the direction of silicon carbide, chemical instruments and methods, carbides, etc., can solve the problems of easy agglomeration and low yield, and achieve the effect of simple process and convenient large-scale production

Active Publication Date: 2021-08-13
NORTHEASTERN UNIV LIAONING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has extremely high requirements on the purity of raw materials, and the obtained product has a wide range of particle size distribution, is easy to agglomerate, and has a low yield.
Therefore, how to find a method for preparing nano-SiC with simple process, high yield, high purity, and controllable particle size and structure is still a big challenge.

Method used

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  • A kind of method for preparing nano-silicon carbide at low temperature
  • A kind of method for preparing nano-silicon carbide at low temperature
  • A kind of method for preparing nano-silicon carbide at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] The first confinement effect: Weigh a certain amount of cellulose and nano-silica (mass ratio is 3:1), put it in a 100ml ball mill jar, mill it at 450rpm for 2h, and then put the mixture in a tube furnace for pyrolysis treatment . The treatment temperature is 600°C, the time is 4h, and the heating rate is 5°C min -1 . The obtained sample was naturally cooled to room temperature to obtain a silica / carbon composite. figure 1 (a) and (b) are scanning electron microscope pictures of the silicon dioxide / carbon composite prepared in this embodiment, from figure 1 In the energy spectrum scanning images of (c) and (d), it can be seen that silicon is evenly distributed on the carbon skeleton, forming a good composite structure with the carbon skeleton.

[0028] The second confinement effect: mechanically mix the silica / carbon composite obtained above with metal magnesium according to a certain mass ratio (1:1), then transfer the mixture to a stainless steel reactor, and final...

Embodiment 2

[0030] The first confinement effect: the same as in Embodiment 1.

[0031] The second confinement effect: the reduction temperature is 650°C, other conditions are the same as in Example 1, and the XRD diffraction pattern of the obtained nano-SiC is as follows figure 2 As shown, compared with the standard card JCPDS29-1129, its 2θ=35.6°, 60° and 71.7° correspond to the (111), (220) and (311) crystal planes of SiC, respectively. image 3 (a) and (b) are the TEM images of the sample, respectively. It can be seen that the sample has a certain pore structure at low resolution, which is mainly due to the SiO 2 Pores left after deoxygenation reacts with the carbon skeleton. The (111) interplanar spacing of SiC can be measured as 0.252nm in the high-resolution transmission electron microscope pictures. Figure 4 It is a scanning electron microscope picture of the sample, and it can be seen that it has an obvious mesoporous structure. Figure 5 (a) is the nitrogen adsorption-desorp...

Embodiment 3

[0033] The first confinement effect: the same as in Embodiment 1.

[0034] The second confinement effect: the reduction temperature is 400°C, other conditions are the same as in Example 1, and the XRD diffraction pattern of the obtained nano-SiC is as follows figure 2 As shown, compared with the standard card JCPDS29-1129, its 2θ=35.6°, 60° and 71.7° correspond to the (111), (220) and (311) crystal planes of SiC, respectively.

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Abstract

The present invention proposes a method for preparing nano-silicon carbide at low temperature. The method adopts a "double confinement" process, first preparing a silica / carbon compound by pyrolyzing the compound of silica / polymer, and then obtaining The complex is mechanically mixed with metal magnesium or calcium, heat-treated in a closed reactor, and finally, washed sequentially with hydrochloric acid and hydrofluoric acid to obtain nanostructured SiC. In this synthetic route, the carbon skeleton in the silica / carbon composite provides the first confinement effect to limit the growth of nano-SiC, while the closed reactor provides the second confinement effect to reduce the temperature of carbothermal reduction. The nano-silicon carbide prepared by the method has a large specific surface area and abundant pores, and can be used as a carrier to load a metal silver catalyst and be used as a negative electrode material of a lithium-ion battery. The method for preparing nano-silicon carbide provided by the invention has a simple process and is convenient for realizing large-scale production.

Description

technical field [0001] The invention belongs to the field of material preparation and relates to a method for preparing nano silicon carbide at low temperature. Background technique [0002] Silicon carbide (SiC), commonly known as corundum, is a new type of semiconductor material developed following the first-generation semiconductor materials and second-generation compound semiconductor materials. It has a wide band gap (2.3eV-3.3eV), high thermal conductivity, and fast electron mobility. And other advantages, so it is very suitable for making electronic devices with high temperature, high power and high density integration. In addition, SiC also has excellent chemical stability, good mechanical properties, and thermal shock resistance, making it an ideal candidate for filter materials and catalyst supports under harsh conditions. Nanostructured SiC has better performance than traditional SiC powder, can meet the strict requirements of higher technical fields, and has wid...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/97B82Y40/00H01M4/58H01M10/0525B01J32/00
CPCY02E60/10
Inventor 孙蔷王增榕
Owner NORTHEASTERN UNIV LIAONING
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