Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell

A technology of solar cells and copper indium gallium selenide, which is applied in the field of solar energy, can solve the problems affecting the performance of copper indium gallium selenide and the unstable existence of monovalent copper ions, etc., achieves cheap and easy to obtain, avoids redox reactions, and prevents metal ions The effect of hydrolysis

Active Publication Date: 2019-05-28
NANJING UNIV OF POSTS & TELECOMM
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  • Claims
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Problems solved by technology

In the current reports on the preparation of CIS or CIGS solar cells by the solution method, most of the copper sources used are divalent copper, but in copper indium gallium selenide with a chalcopyrite structure, copper exists at a single valence, so in the formation of copper indium gallium selenide Redox reactions are required

Method used

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  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell
  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell
  • Solution method for preparing high-efficiency CIS and CIGS thin-film solar cell

Examples

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Example Embodiment

[0072] Example 1: The synthetic thiourea complex of copper and indium was used as a raw material, and water was used as a solvent to prepare a precursor solution, and the solution was used to prepare a CIS solar cell.

[0073] Synthesis of copper thiourea complex (CuTU 3 Cl): Take 150mL ultrapure water into a 500mL beaker, heat it to 60°C, then add 30g thiourea to it, and stir until it is completely dissolved. Weigh 6g of copper powder and add it to the solution, 110℃ oil bath, add 95mL concentrated hydrochloric acid after the temperature rises to 110℃, observe that the red copper powder disappears, white solids appear, the white solids continue to increase and appear flocculent, add 50mL ultrapure Water makes the solution clear and transparent. Then filter while it is hot, and let the filtrate stand to cool down. After a period of time, a large amount of white slender columnar solid appears at the bottom of the beaker. The obtained solid was filtered and washed with acetone, re...

Example Embodiment

[0080] Example 2: The synthetic thiourea complex of copper and indium was used as a raw material, and water was used as a solvent to prepare a precursor solution, and the solution was used to prepare a CIS solar cell.

[0081] Prepare precursor solution: Weigh 0.9896g CuTU respectively 3 Cl and 1.8024g InTU 3 Cl 3 Add to a 20mL sample bottle, and then add 10mL ultrapure water, and magnetically stir at 85°C to obtain a colorless and transparent mixed solution. The mixed solution is filtered with a 0.45μm PES filter.

[0082] Preparation of copper indium sulphur (CIS) precursor film: fix the cleaned glass (molybdenum glass) plated with metallic molybdenum on the suction cup of the homogenizer, use a pipette to measure the precursor solution, and drop it on the molybdenum glass , 2000 rpm spin coating for 30 seconds. Immediately afterwards, the sample was heated (annealed) for 1 min on a hot stage preheated to 270°C. After the sample is cooled, repeat the above spin-coating-heating p...

Example Embodiment

[0085] Example 3: The synthetic thiourea complex of copper, indium, and gallium was used as a raw material, and water was used as a solvent to prepare a precursor solution, and the solution was used to prepare a CIGS solar cell.

[0086] Prepare CIGS precursor solution: weigh 0.35g CuTU separately 3 Cl, 0.45g InTU 3 Cl 3 And 0.16g GaTU 6 Cl 3 Add to a 20mL sample bottle, and then add 10mL ultrapure water, and magnetically stir at 85°C to obtain a colorless and transparent mixed solution. The mixed solution is filtered with a 0.45μm PES filter.

[0087] Preparation of copper indium gallium sulphur (CIGS) precursor film: fix the cleaned glass (molybdenum glass) plated with metallic molybdenum on the suction cup of the homogenizer, use a pipette to measure the precursor solution, and add it dropwise to the molybdenum glass On, spin coating at 2000 rpm for 30 seconds. Immediately afterwards, the sample was heated (annealed) for 1 min on a hot stage preheated to 270°C. After the sample...

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Abstract

The invention discloses a solution method for preparing high-efficiency CIS and CIGS thin-film solar cell. Water and an alcohol solvent are taken as solvents for preparing a precursor solution; thiourea complexes or thiourea derivative complexes of copper, indium and gallium are synthesized; the synthesized complexes are used as raw materials or a combination of the synthesized copper complexes and metal chloride is used as a raw material and dissolved in water or an alcohol solvent to prepare a precursor solution, and the precursor solution is used for preparing the light absorption layer ofthe CIS and CIGS thin-film solar cell. The solvent used in the method is green, environment-friendly, cheap and easy to obtain, and the production cost can be greatly reduced. Metal ion hydrolysis andmetal oxide formation in the annealing process can be prevented, and meanwhile divalent copper defects in CIS and CIGS can be prevented from being formed. The copper-indium-sulfur and copper-indium-gallium-sulfur precursor films are prepared in an external atmospheric environment, and inert atmosphere protection is not needed.

Description

technical field [0001] The invention belongs to the technical field of solar energy, and specifically relates to a method for preparing high-efficiency copper indium selenium and copper indium gallium selenium thin-film solar cells by a solution method, especially a method for preparing high-efficiency copper indium selenium and copper indium selenium by a solution method using water or alcohol as a solvent GaSe thin film solar cell method. Background technique [0002] Copper indium gallium selenide (CuInGaSe2, CIGS) is a direct bandgap semiconductor material with high light absorption coefficient, adjustable optical bandgap, and good stability. It is a very promising light-absorbing material for thin-film solar cells. After years of development, the current laboratory efficiency of CIGS solar cells has surpassed that of polycrystalline silicon solar cells. In December 2017, the highest conversion efficiency of the CIGS solar cell laboratory prepared by Solar Frontier reac...

Claims

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Application Information

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IPC IPC(8): H01L31/032H01L31/0392H01L31/18C03C17/36
CPCY02E10/50Y02P70/50
Inventor 吴三平辛颢江晶晶闫伟博余绍棠
Owner NANJING UNIV OF POSTS & TELECOMM
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