The invention discloses a method for preventing a
wafer from being oxidized during high-temperature operation, and belongs to the technical field of
wafer processing. The method comprises the steps that soaking liquid is prepared, and the soaking liquid comprises liquid and volatile matter of the liquid; the target suction cup is placed in liquid and volatile matter thereof to be soaked for a target time length, the target suction cup is provided with a plurality of through gaps, and the liquid and the volatile matter thereof can be reserved in the gaps and / or on the target suction cup within the target time length; taking out the target suction cup and
processing the target suction cup; and the target
wafer is placed on the treated target suction cup for high-temperature operation, and the liquid and volatile matter remaining in the gap and / or on the target suction cup can be subjected to an oxidation-reduction reaction with air so as to consume
oxygen in the air. Through the mode,
oxygen in the air and the
electrode of the wafer can be prevented from being subjected to oxidation-reduction reaction in the de-bonding stage, so that the wafer
processing efficiency and the wafer qualification rate are improved.