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11results about How to "Avoid redox reactions" patented technology

Quartz fiber with yttrium oxide coating and preparation method thereof

PendingCN119430689AImprove high temperature sintering performanceImprove mechanical propertiesPhysical chemistryTransparent ceramics
The invention discloses a quartz fiber with an yttrium oxide coating and a preparation method of the quartz fiber, and belongs to the field of preparation of wave-transparent ceramics. Aiming at the problem that the performance of the existing quartz fiber is reduced at a high temperature, the invention provides the preparation method of the quartz fiber with the yttrium oxide coating, which comprises the following steps: impregnating the quartz fiber by using yttrium oxide sol, and drying and sintering the impregnated quartz fiber to obtain the quartz fiber coated with the yttrium oxide coating on the surface; the preparation process of the yttrium oxide sol comprises the following steps: sequentially adding a coordination agent and a stabilizer into a yttrium nitrate solution, stirring and dissolving to form a mixed solution, adding a pH regulator to adjust the pH value of the mixed solution to 7-8, heating to a target temperature, and cooling to obtain the yttrium oxide sol. The yttrium oxide coating covers the surface of the quartz fiber, so that the high-temperature sintering resistance of the quartz fiber can be greatly improved; the preparation process of the yttrium oxide sol is simple in technology and low in cost, the prepared yttrium oxide sol is good in stability and can be better attached to the surface of the quartz fiber, and the dipping effect is improved.
Owner:SHANGHAI FRP RES INST

Method for detecting ultra-trace molecules to be detected and application

The invention provides a method for detecting ultra-trace molecules to be detected and application. According to the method, a metal nano surface enhanced Raman scattering detection chip is installed in an in-situ electrochemical cell, a working electrode and a counter electrode are arranged in the in-situ electrochemical cell, and the metal nano surface enhanced Raman scattering detection chip and the working electrode are in a non-contact state; adding a to-be-detected molecular solution and an electrolyte solution into the in-situ electrochemical cell, applying a working potential to the working electrode, then taking out the metal nano surface enhanced Raman scattering detection chip, and carrying out surface enhanced Raman spectrum detection on the metal nano surface enhanced Raman scattering detection chip to obtain the metal nano surface enhanced Raman scattering detection chip. And obtaining the Raman spectrum of the molecule to be detected. The method is good in repeatability and high in detection efficiency, a higher positive spectrum count can be obtained on the premise that the total spectrum amount is detected in a limited mode, and the detection result is reliable. The invention further provides application of the detection method for the ultra-trace molecules to be detected.
Owner:SUN YAT SEN UNIV

Precious metal forming device

ActiveCN222569247UReduce gas contentAvoid redox reactionsMetal formingRedox
The utility model provides a precious metal forming device. The precious metal forming device comprises a closed cavity, a vacuum mechanism and a drainage rod, a first discharge hole is formed in the bottom end of the closed cavity; the closed cavity is connected with the vacuum mechanism in a sealing manner; one end of the drainage rod is arranged at the first discharge port, and the other end of the drainage rod is arranged on the cutting device. According to the precious metal forming device provided by the utility model, oxygen and other gases which are easy to generate oxidation-reduction reaction in the molten precious metal are removed under the vacuum condition, so that the oxidation reaction is avoided, and the influence on the subsequent processing of products is avoided.
Owner:SHENZHEN CHENGYIXIN TECH

A corrosion inhibitor for cooling liquid and a preparation method thereof, and a cooling liquid

This application relates to a corrosion inhibitor for coolants, a method for preparing the same, and a coolant. The corrosion inhibitor comprises: 1 wt% to 5 wt% fatty acid, 0.05 wt% to 0.5 wt% aromatic acid, 0.1 wt% to 1.0 wt% benzotriazole derivative, and 0.1 wt% to 1.0 wt% additives. The benzotriazole derivative has the structural formula shown in Formula I below. In Formula I, R1 to R4 are each independently selected from at least one of fluorine, substituted or unsubstituted C1 to C5 alkyl groups. When substituted, the substituent is selected from fluorine. The corrosion inhibitor for coolants provided in this application, comprising a benzotriazole derivative, can form stable coordination bonds with metal ions in the coolant, thereby reducing the flow resistance of the coolant while improving its corrosion inhibition performance.
Owner:SHENZHEN ENVICOOL TECH

A preparation method and application of photoelectrochemical sensor

The present invention discloses a preparation method and application of a photoelectrochemical sensor, and its preparation comprises the following steps: the first step: dissolving 4,6-dihydrazinopyrimidine and o-vanillin in a mixture to obtain a solute, subjecting the solute to ultrasonic, heating and filtering treatment to obtain a Dy6-SCN solution; the second step: pretreating the FTO slice; the third step: taking out the FTO, adding the Dy6-SCN solution, evaporating naturally, and obtaining a Dy6-SCN / FTO electrode; the fourth step: heating and cooling the prepared electrode, and finally obtaining a Dy-OSCN / FTO electrochemical sensor. The photoelectrochemical sensor is applied to the detection of human urine. Compared with the traditional potentiometric method, the photopotential method provided by the present invention can perform AA detection in the absence of current, greatly reducing the oxidation-reduction of the semiconductor and the target object during the detection process, so that the repeatability and stability of the electrode are guaranteed.
Owner:GUANGZHOU UNIVERSITY

Preparation method of high-purity and high-density polycrystalline kaolinite under hot isostatic pressing condition

PendingCN122167135AAvoid redox reactionsGuaranteed isolationClaywaresPressure transmissionKaolinite
The application discloses a high-density high-purity polycrystalline kaolinite preparation method under hot isostatic pressing conditions. –3 The steel ladle is placed in a graphite furnace cylinder body of a hot isostatic pressing high-pressure container, and a graphite sealing cover is covered on the steel ladle; argon is used as a pressure transmission medium, a multi-gradient cylinder body temperature and pressure increasing mode is adopted, the pressure in the cylinder sample bin is increased to 105.8 MPa, the temperature is increased to 800 DEG C, and the temperature and pressure are kept for 4.8 hours; a multi-gradient cylinder body temperature and pressure decreasing mode is adopted, the temperature in the cylinder sample bin is decreased to 177 DEG C, and the pressure is decreased to 71.8 MPa; finally, the pressure is released, the temperature is decreased to room temperature, and the polycrystalline kaolinite aggregate is obtained; and the technical blank of preparing a high-density polycrystalline kaolinite aggregate bulk body rich in aluminosilicate mineral experimental samples under high-temperature and high-pressure conditions is solved.
Owner:GUIZHOU NORMAL UNIVERSITY

Method for preventing wafer from being oxidized during high-temperature operation

The invention discloses a method for preventing a wafer from being oxidized during high-temperature operation, and belongs to the technical field of wafer processing. The method comprises the steps that soaking liquid is prepared, and the soaking liquid comprises liquid and volatile matter of the liquid; the target suction cup is placed in liquid and volatile matter thereof to be soaked for a target time length, the target suction cup is provided with a plurality of through gaps, and the liquid and the volatile matter thereof can be reserved in the gaps and / or on the target suction cup within the target time length; taking out the target suction cup and processing the target suction cup; and the target wafer is placed on the treated target suction cup for high-temperature operation, and the liquid and volatile matter remaining in the gap and / or on the target suction cup can be subjected to an oxidation-reduction reaction with air so as to consume oxygen in the air. Through the mode, oxygen in the air and the electrode of the wafer can be prevented from being subjected to oxidation-reduction reaction in the de-bonding stage, so that the wafer processing efficiency and the wafer qualification rate are improved.
Owner:WUSHI MICROELECTRONICS (SUZHOU) CO LTD

Method for preparing high-density high-purity polycrystalline barite aggregate under hot isostatic pressing conditions

This invention discloses a method for preparing high-density, high-purity polycrystalline barite polymers under hot isostatic pressing conditions, wherein barite sample powder is compacted and sealed to a vacuum degree of 10. –3 The sample was placed in a steel cladding with dimensions of 55.89 mm outer diameter × 88.76 mm height × 3 mm wall thickness. The cladding was then placed inside the graphite furnace cylinder of a hot isostatic pressure vessel and sealed with a graphite cap. Using argon as the pressure transfer medium, a multi-gradient cylinder heating and pressurization method was employed to raise the temperature inside the sample chamber to 950 °C and the pressure to 112.5 MPa. This pressure and temperature were maintained for 6.0 hours. A multi-gradient cylinder cooling and depressurization method was then used to lower the temperature inside the sample chamber to 178 °C and the pressure to 71.1 MPa. The pressure was then released and the sample was cooled to room temperature to obtain a polycrystalline barite polymer. This method filled the technical gap in the preparation of bulk sulfate experimental samples of high-density polycrystalline barite polymers under high temperature and high pressure conditions.
Owner:GUIZHOU NORMAL UNIVERSITY

Rapid cooling transfer device for MLCCs

This application relates to a rapid cooling and transfer device for MLCCs. The rapid cooling and transfer device for MLCCs described in this application includes a receiving pipe and an air blowing pipe. One end of the receiving pipe forms a receiving port, and the other end forms a discharge port. The air blowing pipe extends into the receiving pipe from the discharge port, and its end is closed. A discharge channel for MLCC movement is formed between the outer wall of the air blowing pipe and the inner wall of the receiving pipe. Multiple air blowing holes are provided around the periphery of the air blowing pipe, connecting an external air source to the discharge channel. The rapid cooling and transfer device for MLCCs described in this application enables high-temperature MLCCs to simultaneously undergo oxidation protection and rapid cooling during the transfer process, solving the two major bottlenecks of oxidation failure and low cooling efficiency in traditional transfer processes, and improving the performance of the processed MLCCs.
Owner:GUANGDONG VIIYONG ELECTRONIC TECH CO LTD

Preparation method of high-density and high-densification polycrystalline trachyandesite under high temperature and high pressure conditions

The application discloses a preparation method of high-density high-densification polycrystalline trachyandesite under high-temperature high-pressure conditions. –3 The application discloses a preparation method of high-density high-densification polycrystalline trachyandesite under high-temperature high-pressure conditions, which comprises the following steps: completely sealing trachyandesite sample powder in a ladle cover with a vacuum degree of 10 –3 Pa; placing the ladle cover in a graphite furnace cylinder body of a high-pressure container of a hot isostatic pressing device, covering a graphite sealing cover; taking argon as a pressure transmission medium; adopting a multi-gradient hot isostatic pressing forming process of first increasing pressure and then increasing temperature to increase the temperature in the cylinder body sample bin to 950°C and the pressure to 91.5 MPa, and keeping constant temperature and constant pressure for 6.8 hours; adopting a multi-gradient cylinder body temperature and pressure decreasing mode to decrease the temperature in the cylinder body sample bin to 176°C and the pressure to 58.7 MPa; and finally, decreasing the pressure and temperature to room temperature to obtain a polycrystalline trachyandesite aggregate sample; and the technical blank of preparing a large bulk experimental sample of high-densification polycrystalline trachyandesite aggregate under high-temperature high-pressure conditions is solved.
Owner:GUIZHOU NORMAL UNIVERSITY

Plug wiring terminal of connector

The utility model discloses a plug wiring terminal of a connector, and aims to solve the problems that a conventional wiring terminal is inconvenient in wiring operation, a cable is easy to loosen and poor in contact, and in a scene that a copper wire and an aluminum wire need to be used at the same time, a contact area is subjected to an oxidation-reduction reaction, so that the wiring operation is inconvenient. The corrosion of the male head terminal made of the metal aluminum material is accelerated; and great potential safety hazards are caused to the safety of the product. The plug wiring terminal comprises an insulating shell and a conductive core body, the conductive core body is arranged in the insulating shell, and the conductive core body comprises a copper terminal, a connecting part and an aluminum terminal. And in a scene that a copper wire and an aluminum wire need to be used at the same time, oxidation-reduction reaction can occur in a contact area, corrosion of the male head terminal made of a metal aluminum material is accelerated, and great potential safety hazards are caused to the safety of a product.
Owner:DONGGUAN SIPU SOLAR TECH CO LTD