PbS quantum dot Si-APD infrared detector and preparation method thereof
An infrared detector and quantum dot technology, applied in the field of photodetectors, can solve problems such as inability to detect light wave signals, and achieve the effects of improving detection performance, reducing edge breakdown effect and good absorption effect
Pending Publication Date: 2019-10-18
CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI
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However, due to its large forbidden band width (1.1eV), even if an antireflection coating is deposited on the photosensitive area, it is impossible to detect light signals with a wavelength greater than 1.1μm
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[0024] Further propose a kind of preparation method for preparing aforementioned PbS quantum dot layer, it may further comprise the steps:
[0025] ① Add 2mmol of lead oxide, 4.8mmol of oleic acid and 18ml of octadecene mixed solution into the three-neck flask as the lead source precursor for preparing PbS quantum dots; configure 10ml of TMS solution containing 200ul in the beaker as the sulfur source Precursor solution;
[0026]②Heating the lead source precursor organic solution obtained in step ① to 120°C under argon gas, the solution turns into a yellow clear solution;
[0027] ③Quickly inject 10ml of octadecene solution containing 200ul TMS into the above precursor solution, and stop heating. When the solution is cooled to 35°C, add acetone solution to remove reaction by-products and purify quantum dots, and prepare PbS quantum dots Stored in n-octane solution;
[0028] ④ Spin-coat the n-octane solution of PbS quantum dots obtained in step ③ on the lower surface of P+ re...
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Abstract
The invention provides a PbS quantum dot Si-APD infrared detector and a preparation method thereof. The detector comprises an intrinsic Si substrate (1), an antireflection film region (4), an N+ dopedregion (3), a P doped region (2), a P+ doped region (6), a PbS quantum dot layer (7), an upper electrode (5) and a lower electrode (8), wherein the antireflection film region (4) is located right above the intrinsic Si substrate (1), the N+ doped region (3) is located below the reflection region (4), the P doped region (2) is located below the N+ doped region (3), the P+ doped region (6) is located below the intrinsic Si substrate (1), the PbS quantum dot layer (7) is located below the P+ doped region (6), and the upper electrode (5) is located on the upper surface of the reflection region (4) and the lower electrode (8) is located on the lower surface of the PbS quantum dot layer (6). According to the invention, the PbS quantum dot layer is used as an absorption layer, and a pure electron injection mode is adopted, so that the PbS quantum dot light wave absorber can absorb near-infrared band light waves, and has the advantages of wide spectral response, high responsivity, low over-noise, low cost, easiness in processing and the like.
Description
technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a PbS quantum dot Si-APD infrared detector and a preparation method thereof, and relates to a photodetector structure and silicon-based avalanche photodetector technology of semiconductor nanomaterials. Background technique [0002] An avalanche photodiode (APD) is a photodetector with internal gain. It works at a high reverse bias voltage that can cause the device to undergo avalanche multiplication. The avalanche multiplication effect causes internal current gain, making the APD device more efficient than other devices. Higher responsiveness. Because of its advantages of high sensitivity, small size, and gain headlights, it can realize the detection of weak signals, and is widely used in optical fiber communication, laser ranging, laser fuze, spectral measurement, remote sensing measurement, medical imaging diagnosis, environmental surveillance and military ...
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Login to View More IPC IPC(8): H01L31/0352H01L31/0224H01L31/032H01L31/107H01L31/18B82Y30/00B82Y40/00
CPCH01L31/107H01L31/1804H01L31/035218H01L31/0324H01L31/03529H01L31/022408B82Y30/00B82Y40/00
Inventor 陆文强张昆付勰康帅冯双龙
Owner CHONGQING INST OF GREEN & INTELLIGENT TECH CHINESE ACADEMY OF SCI