Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

All-solid-state solar cell based on synchronous deposition quantum dots and manufacturing method thereof

A technology of solar cells and quantum dots, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of charge recombination and complicated synthesis steps, and achieve the effect of overcoming difficult packaging, simple process and improving charge collection efficiency.

Inactive Publication Date: 2019-12-10
HEFEI UNIV OF TECH
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, studies have also shown that such narrow-bandgap quantum dots have many surface defects, resulting in serious charge recombination in quantum dot solar cell devices, and it is necessary to further improve the photoelectric conversion efficiency of the device
At the same time, the conventionally used colloidal quantum dots have cumbersome synthesis steps, need to be prepared under high temperature conditions, and require the use of a large amount of harmful organic solvents

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • All-solid-state solar cell based on synchronous deposition quantum dots and manufacturing method thereof
  • All-solid-state solar cell based on synchronous deposition quantum dots and manufacturing method thereof
  • All-solid-state solar cell based on synchronous deposition quantum dots and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1. Cleaning of conductive substrates. The FTO conductive glass was cut to a certain size, and then ultrasonicated for 15 min with detergent, deionized water, acetone, ethanol, and isopropanol in sequence. After cleaning, blow dry the glass with an air gun, further treat it with an ultraviolet ozone cleaning machine for 15 minutes, and store it for later use.

[0036] 2. TiO 2 Preparation of dense layers. The dense layer precursor solution is 0.2M bis(acetylacetonyl)diisopropyl titanate dissolved in n-butanol, mixed and stirred for 30min, and further filtered with a nylon filter to prepare the solution for use. Put the FTO substrate cleaned in step 1 into the glue machine, use a pipette to suck a certain amount of dense layer precursor solution and drop it on the substrate, spin at 500rpm for 5s and 2000rpm for 30s in turn, and then spin The substrate was placed on a heating table, heat-treated at 135° C. for 10 min, and further put into a muffle furnace for sintering...

Embodiment 2

[0045] 1. Cleaning of conductive substrates. The FTO conductive glass was cut to a certain size, and then ultrasonicated for 15 min with detergent, deionized water, acetone, ethanol, and isopropanol in sequence. After cleaning, blow dry the glass with an air gun, further treat it with an ultraviolet ozone cleaning machine for 15 minutes, and store it for later use.

[0046] 2. TiO 2 Preparation of dense layers. The dense layer precursor solution is prepared by dissolving 0.2M bis(acetylacetonyl)diisopropyl titanate in n-butanol, mixing and stirring for 30min, and further filtering the solution with a nylon filter for use. Put the FTO substrate cleaned in step 1 into the glue machine, use a pipette to suck a certain amount of dense layer precursor solution and drop it on the substrate, spin at 500rpm for 5s and 2000rpm for 30s in turn, and then spin The substrate was placed on a heating table, heat-treated at 135° C. for 10 min, and further put into a muffle furnace for sint...

Embodiment 3

[0055] 1. Cleaning of conductive substrates. The FTO conductive glass was cut to a certain size, and then ultrasonicated for 15 min with detergent, deionized water, acetone, ethanol, and isopropanol in sequence. After cleaning, blow dry the glass with an air gun, further treat it with an ultraviolet ozone cleaning machine for 15 minutes, and store it for later use.

[0056] 2. Preparation of dense layer. TiO 2 , ZnO, SnO 2 As a dense layer, the precursor solutions of the dense layer are 0.2M bis(acetylacetonyl) diisopropyl titanate solution, the solvent is n-butanol; the zinc source is 0.8M zinc nitrate solution, the solvent is ethanolamine and 2-methyl methacrylate Oxyethanol mixed solution (volume ratio 1:20); the tin source is 0.1M tin chloride solution, and the solvent is ethanol. Put the FTO substrate cleaned in step 1 into the glue machine, use a pipette to suck a certain amount of dense layer precursor solution and drop it on the substrate, spin at 500rpm for 5s and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an all-solid-state solar cell based on synchronous deposition quantum dots and a manufacturing method thereof. A device structure is a conductive substrate / electron transport compact layer / electron transport mesoporous layer / quantum dot / hole transport layer / metal electrode. In the method, narrow-band-gap quantum dots (PbS, Ag2S and the like) and wide-band-gap quantum dots (CdS, ZnS and the like) are synchronously deposited on a mesoporous film in situ so that wide-spectrum absorption can be realized, photon capture efficiency is improved, a narrow-band-gap quantum dot surface defect state can be effectively passivated, and charge collection efficiency is improved. And finally, photoelectric conversion efficiency of a device is improved through an efficient synergistic effect of the narrow-band gap and wide-band gap quantum dots. The all-solid-state device manufactured in the invention has important significance for improving stability of a quantum dot solar celland promoting the quantum dot solar cell to be practical.

Description

technical field [0001] The invention relates to an all-solid-state solar cell based on synchronous deposition of quantum dots and a preparation method thereof, belonging to the field of photovoltaic technology. Background technique [0002] As an important form of current new energy utilization, photovoltaic power generation has attracted more and more attention from governments and scientists around the world. It is the goal and pursuit of academic researchers to explore new solar cells with high efficiency, low cost and good stability. At present, photovoltaic cells with high market share mainly include silicon-based solar cells (monocrystalline silicon, polycrystalline silicon, amorphous silicon) and semiconductor compound thin-film solar cells (cadmium telluride, copper indium gallium selenide, etc.). However, silicon-based cells are produced with high energy consumption; thin-film solar cells involve the use of many rare elements. In recent years, perovskite solar cel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/152H10K30/151Y02E10/549
Inventor 周儒余建国周钧天罗成毛小丽
Owner HEFEI UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com