InAs quantum dot-based remote epitaxial structure, preparation method and application

An epitaxial structure and quantum dot technology, which is applied in the fields of final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc., can solve the problem of reducing battery short-circuit current and photoelectric conversion efficiency, low size and position distribution uniformity, and affecting quantum dot crystals. Quality and other issues, to achieve the effect of alleviating large tearing, reducing defect density, and inhibiting structural dissimilation

Pending Publication Date: 2020-01-07
SOUTH CHINA UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, the low size and position distribution uniformity of the InAs quantum dot structure is the main defect affecting the

Method used

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  • InAs quantum dot-based remote epitaxial structure, preparation method and application
  • InAs quantum dot-based remote epitaxial structure, preparation method and application
  • InAs quantum dot-based remote epitaxial structure, preparation method and application

Examples

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Example Embodiment

[0030] Example 1

[0031] (1) Using highly doped n-type GaAs substrate as base material, crystal orientation is (100), Si doping concentration is 5.1×10 18 / cm 3 , The carrier mobility is 1336cm 2 / (vs). According to the order, use AR grade acetone, ethanol and ultrapure water for 5 minutes ultrasonic cleaning, then rinse with 6% hydrochloric acid for 3 minutes, and then rinse with deionized water.

[0032] (2) Graphene transfer: Graphene is a single-layer graphene grown on a copper substrate, and the preparation method is a conventional CVD method (refer to Dervishi E, Li Z, Watanabe F, et al. Large-scale graphene production by RF-cCVD method[J].Chemical Communications,2009(27):4061.), before the transfer, the graphene needs to be transferred to a 1mol / L ferric chloride solution, after the copper metal substrate is completely dissolved, use the PMMA companion sheet to remove the graphite The alkene is transferred in ultrapure water three times, each for 3 minutes, to achieve the ...

Example Embodiment

[0037] Example 2

[0038] (1) Using highly doped n-type GaAs substrate as base material, crystal orientation is (001), Si doping concentration is 5.1×10 19 / cm 3 , The carrier mobility is 1600cm 2 / (vs). According to the order, use AR grade acetone, ethanol and ultrapure water for 5 minutes ultrasonic cleaning, then rinse with 6% hydrochloric acid for 3 minutes, and then rinse with deionized water.

[0039] (2) Graphene transfer: Graphene is a single-layer graphene grown on a copper substrate, and the preparation method is a conventional CVD method (refer to Dervishi E, Li Z, Watanabe F, et al. Large-scale graphene production by RF-cCVD method[J].Chemical Communications,2009(27):4061.), before the transfer, the graphene needs to be transferred to a 1mol / L ferric chloride solution, after the copper metal substrate is completely dissolved, use the PMMA companion sheet to remove the graphite The alkene is transferred in ultrapure water three times, each for 3 minutes, to achieve the ...

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Abstract

The invention belongs to the field of solar cell devices and discloses an InAs quantum dot-based remote epitaxial structure, a preparation method thereof and application. The remote epitaxial structure comprises a GaAs substrate, a single-layer graphene layer and an InAs quantum dot array which are stacked in sequence. The preparation method comprises the following steps that: a single-layer graphene is transferred onto a GaAs substrate; the GaAs substrate with the single-layer graphene is putted into a molecular beam epitaxy system; and an InAs quantum dot array is grown on the single-layer graphene layer, so that the InAs quantum dot-based remote epitaxial structure is obtained. According to the InAs quantum dot-based remote epitaxial structure, the preparation method thereof and the application of the invention, the single-layer graphene structure is introduced between the gallium arsenide substrate and the indium arsenide epitaxial layer; the mutual diffusion of indium atoms and gallium atoms on an interface is effectively prevented; planar ordered nucleation sites are provided for the growth of quantum dots, so that the crystal quality of the indium arsenide quantum dots is remarkably improved; and an effective material basis is provided for the improvement of the performance of an indium arsenide intermediate zone quantum dot cell.

Description

technical field [0001] The invention belongs to the field of solar cell devices, and in particular relates to a remote epitaxy structure, preparation and application of InAs quantum dots. Background technique [0002] Energy issues are a huge challenge faced by all countries in the world today. As an important advanced productivity that supports the national economy, sustainable development strategic technology and improves my country's international competitiveness, solar high-efficiency photovoltaic technology has long been a vital part of the national science and technology long-term development plan. important direction of development. Therefore, it is urgent to develop solar high-efficiency photovoltaic technology, improve the photovoltaic conversion efficiency of solar cells, and enhance the practicability of solar cells. [0003] So far, the application of GaAs-based III-V compounds in the field of photovoltaics has been fully valued and promoted, and the efficiency o...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/0304H01L31/0352H01L31/18
CPCH01L31/02167H01L31/03044H01L31/035218H01L31/184Y02E10/544Y02P70/50
Inventor 李国强余粤锋林静梁敬晗
Owner SOUTH CHINA UNIV OF TECH
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