Carbon-silicon carbide ceramic sputtering target and preparation method thereof

A technology of silicon carbide ceramics and sputtering targets, which is applied in the direction of sputtering coating, metal material coating process, ion implantation plating, etc., can solve the problems of complex process flow, long production cycle and low product density, and achieve Simple process flow, short production cycle and excellent product performance

Active Publication Date: 2020-06-05
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF8 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the preparation method can provide sufficient sintering power at high temperature compared with the traditional atmospheric pressure sintering process, the prepared SiC / C ceramic composite material not only has a graphite addition of 35-50wt%, but also has a uniform microstructure, The theoretical sintered density is above 98%, and the mechanical strength is high, but it still has the disadvantages of complicated process and long production cycle
[0009] Although the above preparation methods in the prior art all adopt the hot pressing sintering process, the process flow is relatively complicated, the production cycle is long, and problems such as low product density, high water absorption rate, and low purity are also faced.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Carbon-silicon carbide ceramic sputtering target and preparation method thereof
  • Carbon-silicon carbide ceramic sputtering target and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0069] figure 1 A flow chart of the method for preparing a carbon and silicon carbide ceramic sputtering target provided by the present invention is shown, which specifically includes the following steps:

[0070] (1) Mix carbon powder, silicon carbide powder and binder according to the ratio, and carry out sieving treatment;

[0071] (2) the mixed powder after step (1) sieves is packed into mold and is compacted with tool;

[0072] (3) hot pressing and sintering the compacted mold in step (2) at 1850-2200° C. to obtain carbon and silicon carbide ceramic sputtering target blanks;

[0073] (4) Machining the carbon and silicon carbide ceramic sputtering target blanks obtained in step (3) to obtain carbon and silicon carbide ceramic sputtering targets;

[0074] (5) The carbon and silicon carbide ceramic sputtering targets obtained in step (4) are subjected to size inspection, and qualified products are cleaned, dried and packaged sequentially to meet the shipping standard.

[...

Embodiment 1

[0077] This embodiment provides a method for preparing a carbon and silicon carbide ceramic sputtering target, comprising the following steps:

[0078](1) According to the atomic ratio of C(at%)=60%, take the corresponding carbon powder and silicon carbide powder, and add glycerin whose addition amount is 2% of the total mass of carbon powder and silicon carbide powder as a binding agent, three Put them into the cleaned powder mixing tank, and press argon for protection at the same time, then put the sealed powder mixing tank on the rolling altar machine, and mix at a rolling speed of 15r / min for 24 hours; pause the rolling altar every 8 hours during the mixing period machine, then shake the powder mixing tank, and at the same time tap the outer wall of the powder mixing tank with a rubber hammer for a duration of 5 minutes; after the mixing is completed, use an 80-mesh sieve for screening;

[0079] (2) the mixed powder after step (1) sieves is packed in the graphite mould, is...

Embodiment 2

[0084] This embodiment provides a method for preparing a carbon and silicon carbide ceramic sputtering target, comprising the following steps:

[0085] (1) According to the atomic ratio of C(at%)=70%, take corresponding carbon powder and silicon carbide powder, and add the glycerin that the addition amount is the total mass of carbon powder and silicon carbide powder 3% as binding agent, three Put them into the cleaned powder mixing tank, press argon for protection at the same time, then put the sealed powder mixing tank on the rolling altar machine, and mix at the rolling speed of 20r / min for 20h; pause the rolling altar every 7h during the mixing period machine, then shake the powder mixing tank, and at the same time tap the outer wall of the powder mixing tank with a rubber hammer for a duration of 8 minutes; after the mixing is completed, use a 100-mesh sieve for sieving treatment;

[0086] (2) the mixed powder after step (1) sieves is packed in the graphite mould, is comp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
water absorptionaaaaaaaaaa
Login to view more

Abstract

The invention relates to a carbon-silicon carbide ceramic sputtering target and a preparation method thereof. The preparation method comprises the following steps: (1) mixing carbon powder, silicon carbide powder and a binder according to a ratio, and carrying out screening treatment; (2) filling a mold with the mixed powder screened in the step (1) and tamping by using a tool; (3) carrying out hot pressed sintering treatment on the mold tamped in the step (2) at 1850-2200 DEG C to obtain a carbon-silicon carbide ceramic sputtering target blank; and (4) machining the carbon-silicon carbide ceramic sputtering target blank obtained in the step (3) to obtain the carbon-silicon carbide ceramic sputtering target. The preparation method is simple in technological process and short in productionperiod; and the prepared carbon-silicon carbide ceramic sputtering target has the density of more than or equal to 98%, the purity of more than or equal to 3N, the water absorption rate of less than 0.1% and the resistivity of less than 0.15 ohm.m, meets the requirements of the carbon-silicon carbide ceramic sputtering target on the density and the formability, and provides more excellent performance guarantee for subsequent sputtering use.

Description

technical field [0001] The invention relates to the field of target material and target material preparation, in particular to a carbon and silicon carbide ceramic sputtering target material and a preparation method thereof. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, PVD) refers to the use of low-voltage, high-current arc discharge technology under vacuum conditions to use gas discharge to evaporate the material source and ionize both the evaporated substance and the gas, and then pass The acceleration of the electric field causes the evaporated substance and its reaction product to deposit on the workpiece to form a thin film with a special function. PVD technology is the core technology of various industries such as semiconductor chip manufacturing, solar energy industry, and LCD manufacturing industry. The main methods are vacuum evaporation, arc plasma plating, ion coating, molecular beam epitaxy and sputtering coating, etc. [0...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/52C04B35/645C23C14/34C23C14/06
CPCC04B35/565C04B35/52C04B35/645C23C14/3407C23C14/3414C23C14/06C04B2235/77C04B2235/96
Inventor 姚力军潘杰边逸军王学泽马国成
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap